BRPI0719765A8 - Dispositivo - Google Patents

Dispositivo

Info

Publication number
BRPI0719765A8
BRPI0719765A8 BRPI0719765A BRPI0719765A BRPI0719765A8 BR PI0719765 A8 BRPI0719765 A8 BR PI0719765A8 BR PI0719765 A BRPI0719765 A BR PI0719765A BR PI0719765 A BRPI0719765 A BR PI0719765A BR PI0719765 A8 BRPI0719765 A8 BR PI0719765A8
Authority
BR
Brazil
Prior art keywords
region
light
emitting
current
structure corresponding
Prior art date
Application number
BRPI0719765A
Other languages
English (en)
Inventor
Wierer Jonathan Jr
M Sigalas Mihail
Original Assignee
Philips Lumileds Lighting Co
Koninklijke Philips Electronics Nv
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Lumileds Lighting Co, Koninklijke Philips Electronics Nv, Koninklijke Philips Nv filed Critical Philips Lumileds Lighting Co
Publication of BRPI0719765A2 publication Critical patent/BRPI0719765A2/pt
Publication of BRPI0719765A8 publication Critical patent/BRPI0719765A8/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Landscapes

  • Led Devices (AREA)

Abstract

DISPOSITIVO Um dispositivo emissor de luz inclui uma estrutura com uma região emissora de luz disposta entre uma região tipo n e uma região tipo p. Uma pluralidade de furos na estrutura, que forma um cristal fotônico, são formados em uma primeira região da estrutura correspondente a uma primeira porção da região emissora de luz. Uma segunda região da estrutura correspondente a uma segunda porção da região emissora de luz é livre de furos. O dispositivo é configurado de modo que, quando pressionado à rente, corrente seja injetada na segunda região e a primeira região seja substancialmente de corrente.
BRPI0719765A 2006-10-02 2007-09-27 Dispositivo BRPI0719765A8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/537940 2006-10-02
US11/537,940 US7697584B2 (en) 2006-10-02 2006-10-02 Light emitting device including arrayed emitters defined by a photonic crystal
PCT/IB2007/053937 WO2008041161A2 (en) 2006-10-02 2007-09-27 Light emitting device including arrayed emitters defined by a photonic crystal

Publications (2)

Publication Number Publication Date
BRPI0719765A2 BRPI0719765A2 (pt) 2014-01-28
BRPI0719765A8 true BRPI0719765A8 (pt) 2015-10-06

Family

ID=39156124

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0719765A BRPI0719765A8 (pt) 2006-10-02 2007-09-27 Dispositivo

Country Status (7)

Country Link
US (1) US7697584B2 (pt)
EP (1) EP2074669B1 (pt)
JP (1) JP5237286B2 (pt)
CN (1) CN101523623B (pt)
BR (1) BRPI0719765A8 (pt)
TW (1) TWI453942B (pt)
WO (1) WO2008041161A2 (pt)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008038852B4 (de) 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
DE102008030584A1 (de) 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
US7919780B2 (en) * 2008-08-05 2011-04-05 Dicon Fiberoptics, Inc. System for high efficiency solid-state light emissions and method of manufacture
US20100123386A1 (en) 2008-11-13 2010-05-20 Maven Optronics Corp. Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices
KR101064016B1 (ko) * 2008-11-26 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
EP2317542B1 (en) 2009-10-30 2018-05-23 IMEC vzw Semiconductor device and method of manufacturing thereof
KR20120034910A (ko) * 2010-10-04 2012-04-13 삼성엘이디 주식회사 반도체 발광소자 및 이의 제조방법
CN102468418B (zh) * 2010-11-18 2015-04-29 展晶科技(深圳)有限公司 垂直结构发光二极管芯片及其制造方法
JP5822543B2 (ja) * 2011-06-06 2015-11-24 キヤノン株式会社 発光素子
EP2733752B1 (en) 2011-07-12 2016-10-05 Marubun Corporation Light emitting element and method for manufacturing the same
TWI563686B (en) * 2012-12-21 2016-12-21 Hon Hai Prec Ind Co Ltd Led chip and method manufacturing the same
US10866343B2 (en) * 2013-04-17 2020-12-15 Japan Science And Technology Agency Photonic crystal and optical functional device including the same
CN105283968A (zh) 2013-07-17 2016-01-27 丸文株式会社 半导体发光元件及其制造方法
JP5757512B1 (ja) * 2014-03-06 2015-07-29 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP5999800B1 (ja) * 2015-01-16 2016-09-28 丸文株式会社 深紫外ｌｅｄ及びその製造方法
US10680134B2 (en) 2015-09-03 2020-06-09 Marubun Corporation Deep ultraviolet LED and method for manufacturing the same
EP3249701B1 (en) 2016-03-30 2020-07-08 Marubun Corporation Deep ultraviolet led and production method therefor
CN106505076B (zh) * 2016-11-09 2018-07-31 太原理工大学 微米阵列led制备方法
FR3059828B1 (fr) * 2016-12-02 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
WO2018187571A1 (en) * 2017-04-05 2018-10-11 Vixar Novel patterning of vcsels for displays, sensing, and imaging
US11309454B2 (en) 2018-01-26 2022-04-19 Marubun Corporation Deep ultraviolet LED and method for producing the same
CN109841714B (zh) * 2019-01-09 2020-12-11 南京邮电大学 垂直结构近紫外发光二极管及其制备方法
CN109994578B (zh) 2019-01-09 2020-12-11 南京邮电大学 垂直结构蓝光发光二极管及其制备方法
JP2021150373A (ja) * 2020-03-17 2021-09-27 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
DE102021214311A1 (de) 2021-12-14 2023-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Oberflächenemittierender photonischer-kristall-laser, optoelektronisches system und verfahren zur herstellung eines oberflächenemittierenden photonischer-kristall-lasers
DE102022101575A1 (de) 2022-01-24 2023-07-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer vielzahl optoelektronischer halbleiterchips und optoelektronischer halbleiterchip
US20250047063A1 (en) * 2022-02-08 2025-02-06 Ams-Osram International Gmbh Laser diode component

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279718B2 (en) * 2002-01-28 2007-10-09 Philips Lumileds Lighting Company, Llc LED including photonic crystal structure
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7098589B2 (en) * 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US6831302B2 (en) 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20050152417A1 (en) 2004-01-08 2005-07-14 Chung-Hsiang Lin Light emitting device with an omnidirectional photonic crystal
US20050173714A1 (en) 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
JP4594814B2 (ja) * 2004-10-25 2010-12-08 株式会社リコー フォトニック結晶レーザ、フォトニック結晶レーザの製造方法、面発光レーザアレイ、光伝送システム、及び書き込みシステム
JP2006179573A (ja) * 2004-12-21 2006-07-06 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same

Also Published As

Publication number Publication date
WO2008041161A3 (en) 2008-07-03
TWI453942B (zh) 2014-09-21
JP5237286B2 (ja) 2013-07-17
CN101523623A (zh) 2009-09-02
EP2074669B1 (en) 2017-11-15
CN101523623B (zh) 2011-09-07
JP2010506382A (ja) 2010-02-25
WO2008041161A2 (en) 2008-04-10
TW200836372A (en) 2008-09-01
US7697584B2 (en) 2010-04-13
US20080080581A1 (en) 2008-04-03
EP2074669A2 (en) 2009-07-01
BRPI0719765A2 (pt) 2014-01-28

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI

B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements