BRPI0722169A2 - Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo - Google Patents

Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo

Info

Publication number
BRPI0722169A2
BRPI0722169A2 BRPI0722169-0A2A BRPI0722169A BRPI0722169A2 BR PI0722169 A2 BRPI0722169 A2 BR PI0722169A2 BR PI0722169 A BRPI0722169 A BR PI0722169A BR PI0722169 A2 BRPI0722169 A2 BR PI0722169A2
Authority
BR
Brazil
Prior art keywords
manufacturing
treated surface
vacuum plasma
plasma supplies
supplies
Prior art date
Application number
BRPI0722169-0A2A
Other languages
English (en)
Inventor
Juergen Ramm
Beno Widrig
Denis Kurapov
Original Assignee
Oerlikon Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag filed Critical Oerlikon Trading Ag
Publication of BRPI0722169A2 publication Critical patent/BRPI0722169A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Liquid Crystal (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
BRPI0722169-0A2A 2007-11-01 2007-11-01 Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo BRPI0722169A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2007/061805 WO2009056173A1 (en) 2007-11-01 2007-11-01 Method for manufacturing a treated surface and vacuum plasma sources

Publications (1)

Publication Number Publication Date
BRPI0722169A2 true BRPI0722169A2 (pt) 2014-04-08

Family

ID=39580089

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0722169-0A2A BRPI0722169A2 (pt) 2007-11-01 2007-11-01 Processo para a fabricação de uma superfície tratada, e fontes de plasma a vácuo

Country Status (10)

Country Link
US (1) US9376747B2 (pt)
EP (2) EP2267756B1 (pt)
JP (1) JP5311263B2 (pt)
KR (2) KR20100094492A (pt)
CN (1) CN101842868B (pt)
BR (1) BRPI0722169A2 (pt)
MX (1) MX2010004854A (pt)
RU (1) RU2479885C2 (pt)
TW (1) TW200939896A (pt)
WO (1) WO2009056173A1 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9945024B2 (en) 2009-09-25 2018-04-17 Oerlikon Surface Solutions Ag, Pfäffikon Method for producing cubic zirconia layers
JP2012193410A (ja) * 2011-03-16 2012-10-11 Japan Steel Works Ltd:The スパッタ装置
DE102011112759A1 (de) * 2011-09-08 2013-03-14 Oerlikon Trading Ag, Trübbach Plasmaquelle
WO2016172962A1 (en) * 2015-04-30 2016-11-03 SZ DJI Technology Co., Ltd. System and method for landing a mobile platform via a magnetic field
CN109207966A (zh) * 2018-10-23 2019-01-15 杭州海莱德智能科技有限公司 一种积木式平板pecvd镀膜系统
US20220068610A1 (en) * 2018-12-21 2022-03-03 Evatec Ag Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate
DE102023002926A1 (de) 2023-07-17 2025-01-23 Oerlikon Surface Solutions Ag, Pfäffikon Methode und Vorrichtung zur Synthese von hochisolierenden Schichten

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US649500A (en) * 1899-11-02 1900-05-15 Otto Weinfurt Shade-cord.
US4038171A (en) * 1976-03-31 1977-07-26 Battelle Memorial Institute Supported plasma sputtering apparatus for high deposition rate over large area
FR2572847B1 (fr) * 1984-11-06 1986-12-26 Commissariat Energie Atomique Procede et dispositif d'allumage d'une source d'ions hyperfrequence
JPH0211754A (ja) * 1988-06-29 1990-01-16 Nippon Sheet Glass Co Ltd 真空成膜装置
JP2718731B2 (ja) 1988-12-21 1998-02-25 株式会社神戸製鋼所 真空アーク蒸着装置及び真空アーク蒸着方法
US5268056A (en) 1990-05-31 1993-12-07 Matsushita Electric Industrial Co., Ltd. Plasma surface treating method and apparatus
DE4306611B4 (de) 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Vorrichtung zur Oberflächenbehandlung von Substraten durch Plasmaeinwirkung
JPH07300670A (ja) * 1994-04-28 1995-11-14 Sumitomo Heavy Ind Ltd プラズマを用いたスパッタリング装置
US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
JPH08232064A (ja) * 1995-02-24 1996-09-10 Hitachi Ltd 反応性マグネトロンスパッタ装置
US5518597A (en) 1995-03-28 1996-05-21 Minnesota Mining And Manufacturing Company Cathodic arc coating apparatus and method
US6010636A (en) * 1995-12-29 2000-01-04 Lam Research Corporation Electrode with domes for plasma focusing
JP2868120B2 (ja) * 1997-06-11 1999-03-10 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
JP3685670B2 (ja) * 1999-12-03 2005-08-24 松下電器産業株式会社 Ｄｃスパッタリング装置
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6495000B1 (en) * 2001-07-16 2002-12-17 Sharp Laboratories Of America, Inc. System and method for DC sputtering oxide films with a finned anode
US7166199B2 (en) * 2002-12-18 2007-01-23 Cardinal Cg Company Magnetron sputtering systems including anodic gas distribution systems
RU2252117C2 (ru) * 2003-03-31 2005-05-20 ОАО "НПО Энергомаш им. акад. В.П. Глушко" Способ наплавки меди или медных сплавов на подложку из высоколегированных никелевых сплавов
US6967305B2 (en) * 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
US7879209B2 (en) 2004-08-20 2011-02-01 Jds Uniphase Corporation Cathode for sputter coating
US9997338B2 (en) 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
US20070034501A1 (en) 2005-08-09 2007-02-15 Efim Bender Cathode-arc source of metal/carbon plasma with filtration
TW200814170A (en) * 2006-09-13 2008-03-16 Ind Tech Res Inst Method of adjusting surface characteristic of a substrate
US7850828B2 (en) * 2006-09-15 2010-12-14 Cardinal Cg Company Enhanced virtual anode

Also Published As

Publication number Publication date
EP2206138A1 (en) 2010-07-14
JP2011502215A (ja) 2011-01-20
RU2479885C2 (ru) 2013-04-20
JP5311263B2 (ja) 2013-10-09
EP2267756B1 (en) 2015-03-04
MX2010004854A (es) 2010-06-11
US20100291320A1 (en) 2010-11-18
EP2267756A1 (en) 2010-12-29
EP2206138B8 (en) 2017-07-12
TW200939896A (en) 2009-09-16
CN101842868B (zh) 2012-12-26
RU2010122060A (ru) 2011-12-10
CN101842868A (zh) 2010-09-22
EP2206138B1 (en) 2017-03-22
US9376747B2 (en) 2016-06-28
WO2009056173A1 (en) 2009-05-07
KR20150011014A (ko) 2015-01-29
KR20100094492A (ko) 2010-08-26

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B25G Requested change of headquarter approved

Owner name: OERLIKON TRADING AG, TRUEBBACH (CH)

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2330 DE 01-09-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.