BRPI0804458A2 - Método de eliminar impurezas de boro de silício metalúrgico - Google Patents

Método de eliminar impurezas de boro de silício metalúrgico Download PDF

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Publication number
BRPI0804458A2
BRPI0804458A2 BRPI0804458-9A BRPI0804458A BRPI0804458A2 BR PI0804458 A2 BRPI0804458 A2 BR PI0804458A2 BR PI0804458 A BRPI0804458 A BR PI0804458A BR PI0804458 A2 BRPI0804458 A2 BR PI0804458A2
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BR
Brazil
Prior art keywords
hours
acid
washed
silicon
eliminating
Prior art date
Application number
BRPI0804458-9A
Other languages
English (en)
Inventor
Jiang Guanghui
Original Assignee
Jaco Solarsi Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jaco Solarsi Limited filed Critical Jaco Solarsi Limited
Publication of BRPI0804458A2 publication Critical patent/BRPI0804458A2/pt

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Método de Eliminar Impurezas de Boro de Silício Metalúrgico sendo a presente invenção um método de eliminar impurezas de boro de silício metalúrgico incluindo os seguintes passos: os pós de silício metalúrgico submergidos em ácido durante 6<sym>48 horas tem lavados e secados acalorados; os pós de silício de limpeza, lavado e acalorado com ácido no primeiro passo tem acalorados a 300<198>C 700<198>C no reator e alimentados no gás oxidante pela reação de oxidação, na que o tempo de reação é 6<sym>72 horas. Os pós de silício oxidados acalorados tem submergidos em água ou ácido durante 1<sym>6 horas e logo lavados; os pós de silício submergidos e lavados tem fornados a 100<198>C 300<198>C durante 6<sym>24 horas; pelo arte de purificação do silício metalúrgico da presente invenção feita a temperaturas mais baixas, a operação é mais fácil baixando o costume da purificação pelo bom material nos seguintes passos de trabalho desse modo para cumprir as demandas de produções de silício polycristalina de grau solar de baixo custo.
BRPI0804458-9A 2008-06-06 2008-08-04 Método de eliminar impurezas de boro de silício metalúrgico BRPI0804458A2 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2008100711949A CN101597063A (zh) 2008-06-06 2008-06-06 冶金硅中杂质硼的去除方法

Publications (1)

Publication Number Publication Date
BRPI0804458A2 true BRPI0804458A2 (pt) 2012-03-06

Family

ID=41360772

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0804458-9A BRPI0804458A2 (pt) 2008-06-06 2008-08-04 Método de eliminar impurezas de boro de silício metalúrgico

Country Status (9)

Country Link
US (1) US20110262337A1 (pt)
CN (1) CN101597063A (pt)
BR (1) BRPI0804458A2 (pt)
CA (1) CA2638998C (pt)
DE (1) DE102008036775B4 (pt)
FR (1) FR2932174A1 (pt)
IT (1) IT1391290B1 (pt)
NO (1) NO20083472L (pt)
RU (1) RU2415734C2 (pt)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216539B2 (en) 2010-04-14 2012-07-10 Calisolar, Inc. Cascading purification
CN102259864B (zh) * 2010-05-31 2013-09-18 比亚迪股份有限公司 一种太阳能多晶硅片制备方法
CN101875494B (zh) * 2010-06-29 2012-05-30 华南师范大学 低钛高纯多晶硅的制备方法
CN101891202B (zh) * 2010-07-29 2012-01-25 大连理工大学 采用电子束注入去除多晶硅中杂质硼的方法
CN102153090B (zh) * 2011-05-19 2012-12-12 厦门大学 一种冶金法n型多晶硅片硼吸杂方法
CN102229430B (zh) * 2011-06-09 2013-04-10 宁夏银星多晶硅有限责任公司 一种冶金法制备太阳能多晶硅的技术方法
CN109319788B (zh) * 2018-10-19 2020-06-12 厦门大学 一种采用硅铝钙合金精炼及定向凝固制备多晶硅的方法
CN110342525B (zh) * 2019-07-09 2022-02-18 浙江师范大学 一种低成本去除冶金硅中杂质硼的方法
CN113603094B (zh) * 2021-08-19 2023-03-03 江苏美科太阳能科技股份有限公司 一种多晶硅边角料提纯至高纯硅的方法
CN115636415B (zh) * 2022-10-27 2024-02-27 扬州嘉辉新能源有限公司 一种多晶硅酸洗除杂设备以及除杂方法
WO2025050242A1 (zh) * 2023-09-04 2025-03-13 Tcl中环新能源科技股份有限公司 一种硅粉成型方法、硅块及应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
JPH10130011A (ja) * 1996-10-29 1998-05-19 Kawasaki Steel Corp 金属シリコンからのボロン除去方法
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
DE19741465A1 (de) * 1997-09-19 1999-03-25 Wacker Chemie Gmbh Polykristallines Silicium
WO2003066523A1 (fr) 2002-02-04 2003-08-14 Sharp Kabushiki Kaisha Procede de purification du silicium, scories pour purifier le silicium et silicium purifie
JP2006104030A (ja) * 2004-10-07 2006-04-20 Sharp Corp シリコンの精製方法
JP4947455B2 (ja) * 2005-08-16 2012-06-06 則近 山内 電子ビームを用いたシリコンの精錬方法及び装置

Also Published As

Publication number Publication date
CN101597063A (zh) 2009-12-09
DE102008036775B4 (de) 2012-10-18
ITTO20080630A1 (it) 2009-12-07
FR2932174A1 (fr) 2009-12-11
CA2638998A1 (en) 2009-12-06
DE102008036775A1 (de) 2009-12-31
RU2415734C2 (ru) 2011-04-10
NO20083472L (no) 2009-12-07
US20110262337A1 (en) 2011-10-27
CA2638998C (en) 2011-08-02
RU2008132974A (ru) 2010-02-20
IT1391290B1 (it) 2011-12-01

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