BRPI0810504A2 - Solução de planarização de polissilício para a planarização de painéis de película fina de polissilício de baixa temperatura - Google Patents

Solução de planarização de polissilício para a planarização de painéis de película fina de polissilício de baixa temperatura

Info

Publication number
BRPI0810504A2
BRPI0810504A2 BRPI0810504-9A2A BRPI0810504A BRPI0810504A2 BR PI0810504 A2 BRPI0810504 A2 BR PI0810504A2 BR PI0810504 A BRPI0810504 A BR PI0810504A BR PI0810504 A2 BRPI0810504 A2 BR PI0810504A2
Authority
BR
Brazil
Prior art keywords
planning
polystility
polyssily
temperature
low
Prior art date
Application number
BRPI0810504-9A2A
Other languages
English (en)
Inventor
Sang-In Kim
Seong Jin Hong
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of BRPI0810504A2 publication Critical patent/BRPI0810504A2/pt

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0126—Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • ing And Chemical Polishing (AREA)
  • Silicon Compounds (AREA)
BRPI0810504-9A2A 2007-04-26 2008-02-19 Solução de planarização de polissilício para a planarização de painéis de película fina de polissilício de baixa temperatura BRPI0810504A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US91410507P 2007-04-26 2007-04-26
PCT/US2008/002169 WO2008133767A2 (en) 2007-04-26 2008-02-19 Polysilicon planarization solution for planarizing low temperature polysilicon thin film panels

Publications (1)

Publication Number Publication Date
BRPI0810504A2 true BRPI0810504A2 (pt) 2014-10-14

Family

ID=39084521

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0810504-9A2A BRPI0810504A2 (pt) 2007-04-26 2008-02-19 Solução de planarização de polissilício para a planarização de painéis de película fina de polissilício de baixa temperatura

Country Status (11)

Country Link
US (1) US20100126961A1 (pt)
EP (1) EP2147462A2 (pt)
JP (2) JP2008277715A (pt)
KR (1) KR100885795B1 (pt)
CN (1) CN101122026A (pt)
BR (1) BRPI0810504A2 (pt)
CA (1) CA2685275A1 (pt)
IL (1) IL201672A0 (pt)
TW (1) TW200842970A (pt)
WO (1) WO2008133767A2 (pt)
ZA (1) ZA200905509B (pt)

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WO2020044789A1 (ja) * 2018-08-31 2020-03-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7170578B2 (ja) * 2018-08-31 2022-11-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN109490218A (zh) * 2018-10-11 2019-03-19 湖北兴福电子材料有限公司 一种金属离子在检测多晶硅蚀刻速率上的应用
KR102444014B1 (ko) 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법
EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC ETCHING SOLUTION AND PROCESS FOR ALUMINUM NITRIDE
CN110922970A (zh) * 2019-11-29 2020-03-27 南京纳鑫新材料有限公司 一种perc电池背抛光添加剂及工艺
CN113308249B (zh) * 2020-02-27 2022-12-30 株式会社德山 硅蚀刻液、使用该蚀刻液的硅器件的制造方法以及基板处理方法
JP7511417B2 (ja) * 2020-08-31 2024-07-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US20250015259A1 (en) * 2021-12-02 2025-01-09 Wacker Chemie Ag Process for producing silicon-containing materials
CN115820132A (zh) * 2022-11-23 2023-03-21 嘉兴市小辰光伏科技有限公司 一种链式碱抛光工艺添加剂及其应用

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Also Published As

Publication number Publication date
JP2011129940A (ja) 2011-06-30
KR20080096332A (ko) 2008-10-30
IL201672A0 (en) 2010-05-31
EP2147462A2 (en) 2010-01-27
WO2008133767A2 (en) 2008-11-06
JP2008277715A (ja) 2008-11-13
TW200842970A (en) 2008-11-01
US20100126961A1 (en) 2010-05-27
ZA200905509B (en) 2010-04-28
CN101122026A (zh) 2008-02-13
WO2008133767A3 (en) 2009-01-08
KR100885795B1 (ko) 2009-02-26
CA2685275A1 (en) 2008-11-06

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2329 DE 25-08-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]