BRPI0813443A2 - Estrutura de eletrodo traseiro texturizado para uso em dispositivo fotovoltaico tal como célula solar cigs/cis - Google Patents

Estrutura de eletrodo traseiro texturizado para uso em dispositivo fotovoltaico tal como célula solar cigs/cis

Info

Publication number
BRPI0813443A2
BRPI0813443A2 BRPI0813443-0A2A BRPI0813443A BRPI0813443A2 BR PI0813443 A2 BRPI0813443 A2 BR PI0813443A2 BR PI0813443 A BRPI0813443 A BR PI0813443A BR PI0813443 A2 BRPI0813443 A2 BR PI0813443A2
Authority
BR
Brazil
Prior art keywords
cigs
solar cell
electrode structure
photovoltaic device
rear electrode
Prior art date
Application number
BRPI0813443-0A2A
Other languages
English (en)
Inventor
Jr Leonard L Boyer
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of BRPI0813443A2 publication Critical patent/BRPI0813443A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
BRPI0813443-0A2A 2007-06-12 2008-04-21 Estrutura de eletrodo traseiro texturizado para uso em dispositivo fotovoltaico tal como célula solar cigs/cis BRPI0813443A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/808,764 US7846750B2 (en) 2007-06-12 2007-06-12 Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
PCT/US2008/005115 WO2008156521A2 (en) 2007-06-12 2008-04-21 Textured rear electrode structure for use in photovoltaic device such as cigs/cis solar cell

Publications (1)

Publication Number Publication Date
BRPI0813443A2 true BRPI0813443A2 (pt) 2014-12-23

Family

ID=39767078

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0813443-0A2A BRPI0813443A2 (pt) 2007-06-12 2008-04-21 Estrutura de eletrodo traseiro texturizado para uso em dispositivo fotovoltaico tal como célula solar cigs/cis

Country Status (4)

Country Link
US (2) US7846750B2 (pt)
EP (1) EP2153470A2 (pt)
BR (1) BRPI0813443A2 (pt)
WO (1) WO2008156521A2 (pt)

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US7846750B2 (en) 2007-06-12 2010-12-07 Guardian Industries Corp. Textured rear electrode structure for use in photovoltaic device such as CIGS/CIS solar cell
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US7964434B2 (en) * 2008-09-30 2011-06-21 Stion Corporation Sodium doping method and system of CIGS based materials using large scale batch processing
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
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US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
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US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
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KR20120118092A (ko) * 2011-04-18 2012-10-26 삼성디스플레이 주식회사 태양 전지
JP5789716B2 (ja) * 2011-06-10 2015-10-07 ポスコ 太陽電池基板とその製造方法及びこれを用いた太陽電池
US9397238B2 (en) 2011-09-19 2016-07-19 First Solar, Inc. Method of etching a semiconductor layer of a photovoltaic device
TWI506801B (zh) * 2011-12-09 2015-11-01 鴻海精密工業股份有限公司 太陽能電池組
US9082914B2 (en) 2012-01-13 2015-07-14 Gaurdian Industries Corp. Photovoltaic module including high contact angle coating on one or more outer surfaces thereof, and/or methods of making the same
CN103296129A (zh) * 2012-03-05 2013-09-11 任丘市永基光电太阳能有限公司 柔性cigs太阳电池背电极层的制备工艺
US9206827B2 (en) 2012-11-20 2015-12-08 Avery Dennison Corporation Wall mount organization system
US20140159182A1 (en) * 2012-12-06 2014-06-12 ThinSillicon Corporation Semiconductor device and method for manufacturing a semiconductor device having an undulating reflective surface of an electrode
US8835310B2 (en) * 2012-12-21 2014-09-16 Intermolecular, Inc. Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
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US9405164B2 (en) 2013-08-21 2016-08-02 Board Of Trustees Of Northern Illinois University Electrochromic device having three-dimensional electrode
CN107735867B (zh) * 2013-12-04 2020-06-12 新南创新有限公司 一种光伏电池及其制造方法
FR3016875B1 (fr) 2014-01-30 2016-03-04 Commissariat Energie Atomique Structure photonique de surface en materiau refractaire et son procede de realisation.
WO2016057429A1 (en) * 2014-10-06 2016-04-14 California Institute Of Technology Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics
FR3044825B1 (fr) * 2015-12-02 2018-04-20 Commissariat Energie Atomique Substrat pour agencement pour empilement de cellule photovoltaique en couches minces, agencement associe, et procede de fabrication associe
KR101924538B1 (ko) * 2017-09-14 2019-02-22 한국과학기술연구원 투명 전도성 산화물 후면전극을 가지는 칼코게나이드계 태양전지 및 그 제조방법
CN110416325A (zh) * 2018-04-27 2019-11-05 北京铂阳顶荣光伏科技有限公司 一种薄膜太阳能电池
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Also Published As

Publication number Publication date
EP2153470A2 (en) 2010-02-17
US20080308156A1 (en) 2008-12-18
US20110061730A1 (en) 2011-03-17
US7846750B2 (en) 2010-12-07
WO2008156521A3 (en) 2009-03-05
US8133747B2 (en) 2012-03-13
WO2008156521A2 (en) 2008-12-24

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]