BRPI0818025A2 - Método para o tratamento de plasma de metal ou substratos de isolamento, dispositivo para o tratamento de metal ou substratos de isolamento por plasma - Google Patents

Método para o tratamento de plasma de metal ou substratos de isolamento, dispositivo para o tratamento de metal ou substratos de isolamento por plasma

Info

Publication number
BRPI0818025A2
BRPI0818025A2 BRPI0818025A BRPI0818025A2 BR PI0818025 A2 BRPI0818025 A2 BR PI0818025A2 BR PI0818025 A BRPI0818025 A BR PI0818025A BR PI0818025 A2 BRPI0818025 A2 BR PI0818025A2
Authority
BR
Brazil
Prior art keywords
plasma
insulating substrates
treating metal
treating
metal
Prior art date
Application number
Other languages
English (en)
Inventor
Pierre Vandenbrande
Original Assignee
Ind Plasma Services & Technologies Ipst Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Plasma Services & Technologies Ipst Gmbh filed Critical Ind Plasma Services & Technologies Ipst Gmbh
Publication of BRPI0818025A2 publication Critical patent/BRPI0818025A2/pt
Publication of BRPI0818025B1 publication Critical patent/BRPI0818025B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
  • Electron Sources, Ion Sources (AREA)
BRPI0818025-3A 2007-10-22 2008-10-06 método para o tratamento de plasma de substratos metálicos ou isolantes, e dispositivo para o tratamento de substratos metálicos ou isolantes por plasma BRPI0818025B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP07119011.0 2007-10-22
EP07119011A EP2053631A1 (fr) 2007-10-22 2007-10-22 Procédé et dispositif pour le traitement par plasma de substrats au défilé
PCT/EP2008/063354 WO2009053235A1 (fr) 2007-10-22 2008-10-06 Procede et dispositif pour le traitement par plasma de substrats au defile

Publications (2)

Publication Number Publication Date
BRPI0818025A2 true BRPI0818025A2 (pt) 2015-03-24
BRPI0818025B1 BRPI0818025B1 (pt) 2019-12-03

Family

ID=39233067

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0818025-3A BRPI0818025B1 (pt) 2007-10-22 2008-10-06 método para o tratamento de plasma de substratos metálicos ou isolantes, e dispositivo para o tratamento de substratos metálicos ou isolantes por plasma

Country Status (8)

Country Link
US (1) US8835797B2 (pt)
EP (2) EP2053631A1 (pt)
JP (1) JP5462796B2 (pt)
KR (1) KR101550472B1 (pt)
CN (1) CN101884086B (pt)
AU (1) AU2008315375A1 (pt)
BR (1) BRPI0818025B1 (pt)
WO (1) WO2009053235A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102625559B (zh) * 2012-03-30 2014-06-04 安徽航天环境工程有限公司 长寿命双重点火的等离子体点火枪
JP5861045B2 (ja) * 2013-03-28 2016-02-16 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
CN106880401B (zh) * 2017-03-28 2023-05-26 成都美创医疗科技股份有限公司 一种等离子清创手术刀
CN110536530A (zh) * 2018-09-20 2019-12-03 北京北方华创微电子装备有限公司 磁增强法拉第屏蔽结构及感应耦合等离子体源
CN110560346B (zh) * 2019-09-12 2022-05-13 广东小天才科技有限公司 一种电子产品外壳的制作方法、电子产品外壳及电子产品
EP4084040A1 (en) 2021-04-29 2022-11-02 voestalpine Stahl GmbH Method and devices for plasma treatment

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381916B2 (ja) * 1990-01-04 2003-03-04 マトソン テクノロジー，インコーポレイテッド 低周波誘導型高周波プラズマ反応装置
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
JP2001358131A (ja) * 1995-05-19 2001-12-26 Hitachi Ltd プラズマ処理方法及びプラズマ処理装置
TW279240B (en) * 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
KR100428428B1 (ko) * 1996-04-12 2004-04-28 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마 처리장치
US6097157A (en) * 1998-04-09 2000-08-01 Board Of Regents, The University Of Texas System System for ion energy control during plasma processing
US6101971A (en) * 1998-05-13 2000-08-15 Axcelis Technologies, Inc. Ion implantation control using charge collection, optical emission spectroscopy and mass analysis
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
DE69919499T2 (de) * 1999-01-14 2005-09-08 Vlaamse Instelling Voor Technologisch Onderzoek, Afgekort V.I.T.O. Vorrichtung zum Aufbringen von Beschichtungen auf ein Substrat durch eine induktiv-angekoppelte magnetisch-begrenzte Plasmaquelle
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
TW534928B (en) * 2000-03-31 2003-06-01 Lam Res Corp Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system
US6592710B1 (en) * 2001-04-12 2003-07-15 Lam Research Corporation Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator
EP1178134A1 (fr) * 2000-08-04 2002-02-06 Cold Plasma Applications C.P.A. Procédé et dispositif pour traiter des substrats métalliques au défilé par plasma
US6459066B1 (en) * 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US20020170678A1 (en) * 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US20040194890A1 (en) * 2001-09-28 2004-10-07 Tokyo Electron Limited Hybrid plasma processing apparatus
JP3889280B2 (ja) * 2002-01-07 2007-03-07 忠弘 大見 プラズマ処理装置
US6946054B2 (en) * 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
US8012306B2 (en) * 2006-02-15 2011-09-06 Lam Research Corporation Plasma processing reactor with multiple capacitive and inductive power sources

Also Published As

Publication number Publication date
KR20100102095A (ko) 2010-09-20
BRPI0818025B1 (pt) 2019-12-03
EP2208218B1 (fr) 2016-03-16
WO2009053235A1 (fr) 2009-04-30
JP5462796B2 (ja) 2014-04-02
EP2053631A1 (fr) 2009-04-29
EP2208218A1 (fr) 2010-07-21
JP2011501869A (ja) 2011-01-13
KR101550472B1 (ko) 2015-09-04
CN101884086A (zh) 2010-11-10
CN101884086B (zh) 2012-11-21
AU2008315375A1 (en) 2009-04-30
US20100308022A1 (en) 2010-12-09
US8835797B2 (en) 2014-09-16

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Legal Events

Date Code Title Description
B25C Requirement related to requested transfer of rights

Owner name: INDUSTRIAL PLASMA SERVICES AND TECHNOLOGIES - IPST

B25A Requested transfer of rights approved

Owner name: ADVANCED GALVANISATION AG (CH)

B06T Formal requirements before examination [chapter 6.20 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 03/12/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 03/12/2019, OBSERVADAS AS CONDICOES LEGAIS

B25G Requested change of headquarter approved

Owner name: ADVANCED GALVANISATION AG (CH)

B25A Requested transfer of rights approved

Owner name: NEOVAC GMBH (DE)