BRPI0820277A2 - Método e planta para o tratamento a plasma de substratos sucessivos e instalação - Google Patents

Método e planta para o tratamento a plasma de substratos sucessivos e instalação

Info

Publication number
BRPI0820277A2
BRPI0820277A2 BRPI0820277-0A BRPI0820277A BRPI0820277A2 BR PI0820277 A2 BRPI0820277 A2 BR PI0820277A2 BR PI0820277 A BRPI0820277 A BR PI0820277A BR PI0820277 A2 BRPI0820277 A2 BR PI0820277A2
Authority
BR
Brazil
Prior art keywords
plasma treatment
plant
installation
successive substrates
substrates
Prior art date
Application number
BRPI0820277-0A
Other languages
English (en)
Inventor
Pierre Vanden Brande
Original Assignee
Ind Plasma Services & Technologies Ipst Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Plasma Services & Technologies Ipst Gmbh filed Critical Ind Plasma Services & Technologies Ipst Gmbh
Publication of BRPI0820277A2 publication Critical patent/BRPI0820277A2/pt
Publication of BRPI0820277B1 publication Critical patent/BRPI0820277B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
    • C23C2/36—Elongated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32889—Connection or combination with other apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating With Molten Metal (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
BRPI0820277-0A 2007-11-19 2008-11-07 Método e planta para o tratamento a plasma de substratos sucessivos BRPI0820277B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
BE200700556 2007-11-19
BE2007/0556A BE1017852A3 (fr) 2007-11-19 2007-11-19 Procede et installation de galvanisation par evaporation plasma.
PCT/EP2008/065168 WO2009065745A1 (fr) 2007-11-19 2008-11-07 Procédé et installation de galvanisation par évaporation plasma

Publications (2)

Publication Number Publication Date
BRPI0820277A2 true BRPI0820277A2 (pt) 2015-05-26
BRPI0820277B1 BRPI0820277B1 (pt) 2019-03-19

Family

ID=39672101

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0820277-0A BRPI0820277B1 (pt) 2007-11-19 2008-11-07 Método e planta para o tratamento a plasma de substratos sucessivos

Country Status (11)

Country Link
US (2) US9222162B2 (pt)
EP (1) EP2231893B1 (pt)
JP (1) JP5432168B2 (pt)
KR (1) KR101644475B1 (pt)
CN (1) CN101910447B (pt)
AT (1) ATE511554T1 (pt)
AU (1) AU2008328006B2 (pt)
BE (1) BE1017852A3 (pt)
BR (1) BRPI0820277B1 (pt)
PL (1) PL2231893T3 (pt)
WO (1) WO2009065745A1 (pt)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2491601A (en) * 2011-06-07 2012-12-12 Leclancha S A Drying process for cost effective production of Li-accumulators
CN104480418A (zh) * 2014-12-12 2015-04-01 苏州工业职业技术学院 光伏焊带的镀锡处理方法及其装置
CN104818469A (zh) * 2015-01-09 2015-08-05 凌嘉科技股份有限公司 具有载盘冷却功能的镀膜系统
CN107923030A (zh) * 2015-08-18 2018-04-17 塔塔钢铁荷兰科技有限责任公司 用于清洁和涂覆金属带材的方法和设备
CN109468600B (zh) * 2018-12-25 2021-03-05 合肥鑫晟光电科技有限公司 溅射系统和沉积方法
EP4200461A4 (en) * 2020-08-21 2024-09-18 Applied Materials, Inc. PROCESSING SYSTEM FOR PROCESSING A FLEXIBLE SUBSTRATE AND METHOD FOR MEASURING A PROPERTY OF A FLEXIBLE SUBSTRATE
EP4084040A1 (en) * 2021-04-29 2022-11-02 voestalpine Stahl GmbH Method and devices for plasma treatment
DE102021127116A1 (de) * 2021-10-19 2023-04-20 Thyssenkrupp Steel Europe Ag Verfahren zur Beschichtung eines Stahlflachproduktes mit geringer Lackkrateranfälligkeit
EP4438765A1 (en) * 2023-03-27 2024-10-02 voestalpine Stahl GmbH Method and device for plasma heating of the internal walls of a vacuum furnace

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795116A (fr) * 1972-02-08 1973-05-29 Cockerill Procede d'alimentation de bain d'evaporation
JPH07110991B2 (ja) * 1989-10-02 1995-11-29 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
EP0577766B1 (en) * 1991-04-04 1999-12-29 Seagate Technology, Inc. Apparatus and method for high throughput sputtering
JPH0850715A (ja) * 1994-01-28 1996-02-20 Komag Inc 低ノイズ，高い保磁力および優れた方形度を有する磁気記録媒体および磁気記録媒体形成方法
JP2665202B2 (ja) * 1995-05-31 1997-10-22 九州日本電気株式会社 半導体ウェハ処理装置
US6432281B2 (en) * 1995-12-20 2002-08-13 Recherche Et Developpement Due Groupe Cockerill Sambre Process for formation of a coating on a substrate
BE1010420A3 (fr) * 1996-07-12 1998-07-07 Cockerill Rech & Dev Procede pour la formation d'un revetement sur un substrat et installation pour la mise en oeuvre de ce procede.
US6572738B1 (en) * 1999-05-25 2003-06-03 Unaxis Balzers Aktiengesellschaft Vacuum treatment system and process for manufacturing workpieces
FR2800098B1 (fr) * 1999-10-26 2002-03-01 Lorraine Laminage Tole d'acier dotee d'un revetement comprenant une couche principale d'alliage zinc-chrone, dont la phase preponderante presente une structure delta et/ou dzeta
EP1178134A1 (fr) 2000-08-04 2002-02-06 Cold Plasma Applications C.P.A. Procédé et dispositif pour traiter des substrats métalliques au défilé par plasma
EP1182272A1 (fr) 2000-08-23 2002-02-27 Cold Plasma Applications C.P.A. Procédé et dispositif permettant le dépôt de couches métalliques en continu par plasma froid
JP4630443B2 (ja) * 2000-10-23 2011-02-09 キヤノン株式会社 スパッタリングによる成膜方法
TW200816881A (en) * 2006-08-30 2008-04-01 Noritsu Koki Co Ltd Plasma generation apparatus and workpiece processing apparatus using the same

Also Published As

Publication number Publication date
WO2009065745A1 (fr) 2009-05-28
JP2011503358A (ja) 2011-01-27
PL2231893T3 (pl) 2011-12-30
US11268185B2 (en) 2022-03-08
BRPI0820277B1 (pt) 2019-03-19
AU2008328006A1 (en) 2009-05-28
US20100272918A1 (en) 2010-10-28
BE1017852A3 (fr) 2009-09-01
KR20100102102A (ko) 2010-09-20
US20160186308A1 (en) 2016-06-30
CN101910447A (zh) 2010-12-08
EP2231893B1 (fr) 2011-06-01
CN101910447B (zh) 2012-07-04
EP2231893A1 (fr) 2010-09-29
KR101644475B1 (ko) 2016-08-03
JP5432168B2 (ja) 2014-03-05
ATE511554T1 (de) 2011-06-15
AU2008328006B2 (en) 2013-05-23
US9222162B2 (en) 2015-12-29

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Legal Events

Date Code Title Description
B25C Requirement related to requested transfer of rights

Owner name: INDUSTRIAL PLASMA SERVICES AND TECHNOLOGIES -IPST

B25A Requested transfer of rights approved

Owner name: ADVANCED GALVANISATION AG (CH)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 19/03/2019, OBSERVADAS AS CONDICOES LEGAIS.

B21F Lapse acc. art. 78, item iv - on non-payment of the annual fees in time

Free format text: REFERENTE A 17A ANUIDADE.

B21H Decision of lapse of a patent or of a certificate of addition of invention cancelled [chapter 21.8 patent gazette]

Free format text: ANULADA A PUBLICACAO CODIGO 21.6 NA RPI NO 2854 DE 16/09/2025 POR TER SIDO INDEVIDA.