BRPI0821262A2 - Célula fotovoltaica e dispositivo fotovoltaico - Google Patents

Célula fotovoltaica e dispositivo fotovoltaico

Info

Publication number
BRPI0821262A2
BRPI0821262A2 BRPI0821262-7A BRPI0821262A BRPI0821262A2 BR PI0821262 A2 BRPI0821262 A2 BR PI0821262A2 BR PI0821262 A BRPI0821262 A BR PI0821262A BR PI0821262 A2 BRPI0821262 A2 BR PI0821262A2
Authority
BR
Brazil
Prior art keywords
photovoltaic
cell
photovoltaic cell
photovoltaic device
Prior art date
Application number
BRPI0821262-7A
Other languages
English (en)
Inventor
Efrat Lifshitz
Volker Hilarius
Original Assignee
Technion Res & Dev Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Res & Dev Foundation filed Critical Technion Res & Dev Foundation
Publication of BRPI0821262A2 publication Critical patent/BRPI0821262A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/45—Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
BRPI0821262-7A 2007-12-13 2008-12-14 Célula fotovoltaica e dispositivo fotovoltaico BRPI0821262A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1353807P 2007-12-13 2007-12-13
PCT/IL2008/001614 WO2009074993A2 (en) 2007-12-13 2008-12-14 Photovoltaic cells comprising group iv-vi semiconductor core-shell nanocrystals

Publications (1)

Publication Number Publication Date
BRPI0821262A2 true BRPI0821262A2 (pt) 2015-06-16

Family

ID=40755957

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821262-7A BRPI0821262A2 (pt) 2007-12-13 2008-12-14 Célula fotovoltaica e dispositivo fotovoltaico

Country Status (9)

Country Link
US (1) US20100326506A1 (pt)
EP (1) EP2232574A2 (pt)
JP (1) JP2011518421A (pt)
KR (1) KR101460395B1 (pt)
CN (1) CN102308393A (pt)
AU (1) AU2008334276B2 (pt)
BR (1) BRPI0821262A2 (pt)
SG (1) SG186643A1 (pt)
WO (1) WO2009074993A2 (pt)

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US8310022B2 (en) * 2009-06-03 2012-11-13 Sargent Edward H Photoconductive materials and devices with internal photoconductive gain
DE102009049962A1 (de) * 2009-10-19 2011-06-16 Rheinische Friedrich-Wilhelms-Universität Bonn Lichtquelle und Verfahren zur Lichterzeugung
KR101833313B1 (ko) * 2010-01-28 2018-03-02 이섬 리서치 디벨러프먼트 컴파니 오브 더 히브루 유니버시티 오브 예루살렘 엘티디. 규정된 컬러 방출을 위한 조명 장치
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
CA2800549A1 (en) 2010-05-24 2011-12-01 University Of Florida Research Foundation, Inc. Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
KR101262501B1 (ko) * 2011-04-04 2013-05-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
RU2013148840A (ru) * 2011-04-05 2015-05-10 Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. Способ и устройство для интегрирования инфракрасного (ик) фотоэлектрического элемента на тонкопленочный фотоэлектрический элемент
EP2695214B1 (en) 2011-04-05 2017-12-20 University of Florida Research Foundation, Inc. Method and apparatus for providing a window with an at least partially transparent one side emitting oled lighting and an ir sensitive photovoltaic panel
WO2012149026A2 (en) * 2011-04-25 2012-11-01 The Research Foundation Of State University Of New York Spectral modification
JP6502093B2 (ja) 2011-06-30 2019-04-17 ユニバーシティ オブ フロリダ リサーチ ファンデーション インコーポレーティッド 利得を伴って赤外線放射を検出する方法および装置
US20130112942A1 (en) 2011-11-09 2013-05-09 Juanita Kurtin Composite having semiconductor structures embedded in a matrix
US9159872B2 (en) 2011-11-09 2015-10-13 Pacific Light Technologies Corp. Semiconductor structure having nanocrystalline core and nanocrystalline shell
US20130146141A1 (en) * 2011-12-12 2013-06-13 Matthew A. PELTON Small core/large shell semiconductor nanocrystals for high performance luminescent solar concentrators and wavelength downshifting
US20140014169A1 (en) * 2012-07-13 2014-01-16 Triton Systems, Inc. Nanostring mats, multi-junction devices, and methods for making same
US8829331B2 (en) * 2012-08-10 2014-09-09 Dimerond Technologies Llc Apparatus pertaining to the co-generation conversion of light into electricity
US9425365B2 (en) 2012-08-20 2016-08-23 Pacific Light Technologies Corp. Lighting device having highly luminescent quantum dots
CN102881829A (zh) * 2012-10-15 2013-01-16 吉林大学 反式结构的水相无机有机杂化太阳能电池及其制备方法
US8889457B2 (en) 2012-12-13 2014-11-18 Pacific Light Technologies Corp. Composition having dispersion of nano-particles therein and methods of fabricating same
KR101479157B1 (ko) * 2013-03-15 2015-02-25 김일구 나노구조의 양자점 유기 벌크 이종접합 수광소자
JP6175293B2 (ja) * 2013-06-18 2017-08-02 京セラ株式会社 量子ドット粒子およびそれを用いた半導体装置
WO2015084810A2 (en) 2013-12-05 2015-06-11 The Board Of Regents Of The University Of Oklahoma Thermophotovoltaic materials, methods of deposition, and devices
US20160365478A1 (en) * 2013-12-27 2016-12-15 The Board Of Trustee Of The University Of Illinois Nanostructure material stack-transfer methods and devices
JP2015191908A (ja) * 2014-03-27 2015-11-02 京セラ株式会社 量子ドット，光電変換層，光電変換装置
WO2015186033A1 (en) * 2014-06-03 2015-12-10 Fondazione Istituto Italiano Di Tecnologia Continuous-wave pumped colloidal nanocrystal laser
JP6416262B2 (ja) * 2014-07-30 2018-10-31 京セラ株式会社 量子ドット太陽電池
CN107636431A (zh) 2015-06-11 2018-01-26 佛罗里达大学研究基金会有限公司 单分散ir 吸收纳米颗粒以及相关方法和装置
CN105542749A (zh) * 2015-12-28 2016-05-04 Tcl集团股份有限公司 一种在低温下混合壳源前驱物的长壳方法及量子点
TWI734754B (zh) * 2016-03-24 2021-08-01 美商陶氏全球科技責任有限公司 光電子裝置及使用方法
KR101958088B1 (ko) * 2017-05-23 2019-03-14 한국세라믹기술원 코어/쉘 다층구조 반도체 나노입자의 제조방법
CN107248534B (zh) * 2017-05-27 2018-10-16 华中科技大学 一种成分连续渐变的半导体合金薄膜及其制备方法和应用
KR102547801B1 (ko) * 2017-08-28 2023-06-26 삼성전자주식회사 적외선 검출기 및 이를 포함하는 적외선 센서
CN110323318A (zh) * 2019-06-19 2019-10-11 岭南师范学院 一种PbSe量子点近红外发光二极管的制备方法
CN110299423B (zh) * 2019-06-20 2020-11-13 浙江大学 一种p型二维合金化合物半导体光电场效应晶体管及其制备方法
KR102386803B1 (ko) * 2020-04-01 2022-04-14 이화여자대학교 산학협력단 색상형 dbr 필름 및 이의 제조 방법
CN112531065B (zh) * 2020-12-22 2021-06-29 中国科学院重庆绿色智能技术研究院 用于红外光电的铅盐薄膜结构及其制备方法
CN115377312B (zh) * 2022-08-31 2025-09-26 北京京东方技术开发有限公司 发光器件、制备方法、显示面板和装置
CN120692937B (zh) * 2025-08-14 2025-10-24 电子科技大学 一种基于混合维材料的复合mosfet光电探测器

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Also Published As

Publication number Publication date
KR101460395B1 (ko) 2014-11-21
WO2009074993A2 (en) 2009-06-18
KR20100102111A (ko) 2010-09-20
WO2009074993A3 (en) 2011-04-21
AU2008334276A1 (en) 2009-06-18
SG186643A1 (en) 2013-01-30
CN102308393A (zh) 2012-01-04
JP2011518421A (ja) 2011-06-23
US20100326506A1 (en) 2010-12-30
EP2232574A2 (en) 2010-09-29
AU2008334276B2 (en) 2014-03-20

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]