BRPI0821501B8 - Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. - Google Patents

Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Info

Publication number
BRPI0821501B8
BRPI0821501B8 BRPI0821501A BRPI0821501A BRPI0821501B8 BR PI0821501 B8 BRPI0821501 B8 BR PI0821501B8 BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 B8 BRPI0821501 B8 BR PI0821501B8
Authority
BR
Brazil
Prior art keywords
indium
sulfur
copper
gallium
preparing
Prior art date
Application number
BRPI0821501A
Other languages
English (en)
Inventor
Huang Fuqiang
Wang Yaoming
Original Assignee
Shanghai Inst Ceramics Cas
Shandong Sino Shine Photoelectric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Inst Ceramics Cas, Shandong Sino Shine Photoelectric Co Ltd filed Critical Shanghai Inst Ceramics Cas
Publication of BRPI0821501A2 publication Critical patent/BRPI0821501A2/pt
Publication of BRPI0821501B1 publication Critical patent/BRPI0821501B1/pt
Publication of BRPI0821501B8 publication Critical patent/BRPI0821501B8/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

MÉTODO PARA PREPARAÇÃO DE UMA CAMADA DE ABSORÇÃO LEVE DE CÉLULA SOLAR DE FILME FINO DE COBRE-ÍNDIO-GÁLIO-ENXOFRE- SELÊNIO, é provido; tal método emprega uma técnica química de fase líquida sem vácuo, a qual compreende os seguintes passos: formação de solução-fonte contendo cobre, índio, gália, enxofre e selênio; uso desta solução para formar um filme ou substrato precursor pelo processo de fase líquida sem vácuo; secagem e recozimento do filme precursor. Assim, um filme composto de cobre-índio-gália-enxofre-selênio é adquirido.
BRPI0821501A 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. BRPI0821501B8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CNA2007101737852A CN101471394A (zh) 2007-12-29 2007-12-29 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
CN200710173785.2 2007-12-29
PCT/CN2008/073805 WO2009089754A1 (en) 2007-12-29 2008-12-29 Preparation method of light absorption layer of copper-indium-gallium-sulfur-selenium film solar cell

Publications (3)

Publication Number Publication Date
BRPI0821501A2 BRPI0821501A2 (pt) 2015-06-16
BRPI0821501B1 BRPI0821501B1 (pt) 2019-02-12
BRPI0821501B8 true BRPI0821501B8 (pt) 2022-08-23

Family

ID=40828635

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821501A BRPI0821501B8 (pt) 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Country Status (8)

Country Link
US (1) US9735297B2 (pt)
EP (1) EP2234168A4 (pt)
JP (1) JP5646342B2 (pt)
KR (1) KR101633388B1 (pt)
CN (2) CN101471394A (pt)
BR (1) BRPI0821501B8 (pt)
RU (1) RU2446510C1 (pt)
WO (1) WO2009089754A1 (pt)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101471394A (zh) 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP5511320B2 (ja) * 2008-11-11 2014-06-04 京セラ株式会社 薄膜太陽電池の製法
CN101700873B (zh) * 2009-11-20 2013-03-27 上海交通大学 铜锌锡硒纳米粒子的制备方法
JP5464984B2 (ja) * 2009-11-26 2014-04-09 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
US20120280362A1 (en) * 2009-12-18 2012-11-08 The Regents Of The University Of California Simple route for alkali metal incorporation in solution-processed crystalline semiconductors
CN102130202A (zh) * 2010-01-14 2011-07-20 正峰新能源股份有限公司 非真空形成铜铟镓硫硒吸收层及硫化镉缓冲层的方法及系统
CN102652367B (zh) * 2010-01-29 2015-01-28 京瓷株式会社 半导体层的制造方法,光电转换装置的制造方法及半导体层形成用溶液
CN101818375A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 以非真空工艺制作铜铟镓硒(硫)光吸收层的方法
CN101820029A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 非真空制作铜铟镓硒和/或硫的太阳能电池
CN101820030A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 非真空制作铜铟镓硒和/或硫光吸收层的方法
DE102011004652A1 (de) * 2010-02-26 2011-09-01 Electronics And Telecommunications Research Institute Verfahren zur Herstellung einer lichtabsorbierenden Dünnfilmschicht und ein dieses verwendendes Verfahren zur Herstellung einer Dünnfilm-Solarzelle
CN101771106B (zh) * 2010-03-05 2011-10-05 中国科学院上海硅酸盐研究所 铜锌镉锡硫硒薄膜太阳电池光吸收层的制备方法
CN101789469B (zh) * 2010-03-05 2013-01-02 中国科学院上海硅酸盐研究所 铜铟镓硒硫薄膜太阳电池光吸收层的制备方法
CN102024858B (zh) * 2010-04-19 2013-12-04 福建欧德生光电科技有限公司 油墨、薄膜太阳能电池及其制造方法
CN101885071B (zh) * 2010-05-28 2012-04-25 电子科技大学 一种铜锌锡硒纳米粉末材料的制备方法
CN101958369B (zh) * 2010-07-27 2011-12-28 上海太阳能电池研究与发展中心 一种铜铟镓硒薄膜材料的制备方法
CN101944552B (zh) * 2010-07-30 2012-02-29 合肥工业大学 一种太阳能电池光吸收层材料cigs薄膜的制备方法
US8282995B2 (en) 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
CN103189991B (zh) * 2010-10-01 2016-02-17 应用材料公司 用在薄膜晶体管应用中的砷化镓基材料
KR101116705B1 (ko) * 2010-10-06 2012-03-13 한국에너지기술연구원 Ｃｉｇｓ 박막의 용액상 제조방법 및 이에 의해 제조된 ｃｉｇｓ 박막
US20120100663A1 (en) * 2010-10-26 2012-04-26 International Business Machines Corporation Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se
CN102024878A (zh) * 2010-11-03 2011-04-20 上海联孚新能源科技有限公司 一种太阳能电池用铜铟镓硫薄膜的制备方法
US20130264526A1 (en) * 2010-12-03 2013-10-10 E I Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
TWI531078B (zh) * 2010-12-29 2016-04-21 友達光電股份有限公司 太陽電池的製造方法
KR101124226B1 (ko) * 2011-02-15 2012-03-27 한국화학연구원 전구체를 이용한 ｃｉｓ 박막의 제조방법
EP2676300A4 (en) * 2011-02-18 2017-05-03 University of Washington Through Its Center for Commercialization Methods of forming semiconductor films including i2-ii-iv-vi4 and i2-(ii,iv)-iv-vi4 semiconductor films and electronic devices including the semiconductor films
WO2013019299A2 (en) * 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
TW201318967A (zh) * 2011-06-10 2013-05-16 Tokyo Ohka Kogyo Co Ltd 聯胺配位Ｃｕ硫屬化物錯合物及其製造方法，光吸收層形成用塗佈液，以及光吸收層形成用塗佈液之製造方法
US8268270B1 (en) * 2011-06-10 2012-09-18 Tokyo Ohka Kogyo Co., Ltd. Coating solution for forming a light-absorbing layer of a chalcopyrite solar cell, method of producing a light-absorbing layer of a chalcopyrite solar cell, method of producing a chalcopyrite solar cell and method of producing a coating solution for forming a light-absorbing layer of a chalcopyrite solar cell
CN102347401A (zh) * 2011-09-02 2012-02-08 普乐新能源（蚌埠）有限公司 太阳能电池铜铟镓硒膜层的制备方法
JP5739300B2 (ja) * 2011-10-07 2015-06-24 Ｄｏｗａエレクトロニクス株式会社 セレン化インジウム粒子粉末およびその製造方法
RU2492938C1 (ru) * 2012-02-15 2013-09-20 Микаил Гаджимагомедович Вердиев Способ нанесения пленок веществ на различные подложки
WO2013125818A1 (ko) * 2012-02-24 2013-08-29 영남대학교 산학협력단 태양 전지 제조 장치 및 태양 전지 제조 방법
KR101326782B1 (ko) * 2012-02-24 2013-11-08 영남대학교 산학협력단 태양 전지 제조 장치
KR101326770B1 (ko) * 2012-02-24 2013-11-20 영남대학교 산학협력단 태양 전지 제조 방법
KR101298026B1 (ko) * 2012-04-13 2013-08-26 한국화학연구원 태양전지 광활성층의 제조방법
US9082619B2 (en) 2012-07-09 2015-07-14 International Solar Electric Technology, Inc. Methods and apparatuses for forming semiconductor films
CN102790130B (zh) * 2012-08-09 2015-08-05 中国科学院长春应用化学研究所 一种吸光层薄膜的制备方法
KR101388451B1 (ko) * 2012-08-10 2014-04-24 한국에너지기술연구원 탄소층이 감소한 ｃｉ(ｇ)ｓ계 박막의 제조방법, 이에 의해 제조된 박막 및 이를 포함하는 태양전지
US8992874B2 (en) * 2012-09-12 2015-03-31 Tokyo Ohka Kogyo Co., Ltd. Method of producing hydrazine-coordinated Cu chalcogenide complex
US20140117293A1 (en) * 2012-10-29 2014-05-01 Tokyo Ohka Kogyo Co., Ltd. Coating solution for forming light-absorbing layer, and method of producing coating solution for forming light-absorbing layer
CN102983222A (zh) * 2012-12-06 2013-03-20 许昌天地和光能源有限公司 具有梯度带隙分布的吸收层制备方法
TWI495740B (zh) * 2012-12-14 2015-08-11 Nat Inst Chung Shan Science & Technology 軟性太陽能電池光吸收層之真空製程設備及其製造方法
KR101450426B1 (ko) * 2013-01-09 2014-10-14 연세대학교 산학협력단 칼코겐화물 흡수층용 나트륨 도핑 용액 및 이를 이용한 박막태양전지 제조방법
ITUD20130030A1 (it) * 2013-03-01 2014-09-02 Sumeet Kumar Nanomateriali compositi ibridi
KR101590224B1 (ko) * 2013-04-11 2016-01-29 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
US9105798B2 (en) * 2013-05-14 2015-08-11 Sun Harmonics, Ltd Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks
JP6012866B2 (ja) * 2013-06-03 2016-10-25 東京応化工業株式会社 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法
CN103325886B (zh) * 2013-06-09 2017-07-18 徐东 一种具有能带梯度分布的铜铟铝硒（cias）薄膜的制备方法
ES2869193T3 (es) * 2013-08-01 2021-10-25 Lg Chemical Ltd Método de fabricación de un precursor aglomerado para fabricar una capa de absorción de luz
KR102164628B1 (ko) 2013-08-05 2020-10-13 삼성전자주식회사 나노 결정 합성 방법
US8999746B2 (en) 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
CN103602982A (zh) * 2013-11-21 2014-02-26 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的非真空制备方法
CN103633182B (zh) * 2013-11-27 2017-04-12 上海富际新能源科技有限公司 铜铟镓硫硒敏化半导体阳极太阳电池及其制备方法
KR101462498B1 (ko) * 2013-12-18 2014-11-19 한국생산기술연구원 Cigs 흡수층 제조방법, 이를 이용한 박막 태양전지 제조방법 및 박막 태양전지
CN103928575A (zh) * 2014-04-29 2014-07-16 中国科学院长春应用化学研究所 一种吸光层薄膜、其制备方法和铜基薄膜太阳能电池
CN104064626B (zh) * 2014-06-25 2017-11-17 青岛科技大学 一种循环浸渍制备Cu2ZnSn(S1‑x,Sex)4纳米晶薄膜的方法
CN104037248A (zh) * 2014-07-08 2014-09-10 厦门大学 一种铜铟镓硫硒薄膜材料的制备方法
KR101532883B1 (ko) * 2014-09-02 2015-07-02 성균관대학교산학협력단 전이금속 디칼코게나이드 박막의 형성 방법
WO2016068155A1 (ja) * 2014-10-30 2016-05-06 東京応化工業株式会社 均一系塗布液及びその製造方法、太陽電池用光吸収層及びその製造方法、並びに太陽電池及びその製造方法
JP6554332B2 (ja) * 2014-10-30 2019-07-31 東京応化工業株式会社 均一系塗布液及びその製造方法、太陽電池用光吸収層及びその製造方法、並びに太陽電池及びその製造方法
TW201621068A (zh) * 2014-12-09 2016-06-16 新能光電科技股份有限公司 銅銦鎵硒之表面硫化的製程方法
KR101793640B1 (ko) 2015-09-24 2017-11-20 재단법인대구경북과학기술원 인듐을 이용한 태양전지용 ｃｚｔｓ계 흡수층 박막, 이의 제조방법 및 이를 이용한 태양전지
CN106340545B (zh) * 2016-09-14 2018-06-12 南京邮电大学 Cis及cigs薄膜太阳能电池吸光层的制备及新溶剂在其中的应用
TWI619614B (zh) * 2017-05-04 2018-04-01 施權峰 太陽能吸收層及其製作方法
CN107195697B (zh) * 2017-06-01 2019-05-03 中南大学 一种铜钡(锶/钙)锡硫(硒)薄膜的制备方法
RU2660408C1 (ru) * 2017-08-11 2018-07-06 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ изготовления светопоглощающих элементов оптических систем на титановых подложках
JP2019087745A (ja) * 2017-11-08 2019-06-06 東京応化工業株式会社 均一系塗布液及びその製造方法
KR102031481B1 (ko) * 2018-02-06 2019-10-11 중앙대학교 산학협력단 금속-칼코겐 박막이 구비된 전자 부재의 제조 방법 및 이에 의해 제조된 금속-칼코겐 박막이 구비된 전자 부재를 포함하는 전자 소자
RU2682836C1 (ru) 2018-05-29 2019-03-21 Общество с ограниченной ответственностью "Солартек" Способ изготовления светопроницаемого тонкопленочного солнечного модуля на основе халькопирита
CN109817734A (zh) * 2018-12-26 2019-05-28 北京铂阳顶荣光伏科技有限公司 一种铜铟镓硒薄膜太阳能电池用吸收层的制备方法
CN110379872A (zh) * 2019-05-31 2019-10-25 北京铂阳顶荣光伏科技有限公司 铜铟镓硒太阳能电池吸收层的制备方法及太阳能电池
US11018275B2 (en) 2019-10-15 2021-05-25 Applied Materials, Inc. Method of creating CIGS photodiode for image sensor applications
CN110752272B (zh) * 2019-10-18 2021-07-06 信阳师范学院 一种提高柔性铜铟镓硒薄膜太阳能电池效率的方法
CN111569856B (zh) * 2020-04-03 2023-06-09 清华-伯克利深圳学院筹备办公室 In-Ga2O3复合光催化剂及其制备方法和应用
CN112756604B (zh) * 2020-12-22 2021-11-05 吉林大学 一种类地幔条件烧结聚晶金刚石复合片及其制备方法
RU2764711C1 (ru) * 2021-06-17 2022-01-19 Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" (Сколковский институт науки и технологий) Электрон-селективный слой на основе оксида индия, легированного алюминием, способ его изготовления и фотовольтаическое устройство на его основе
CN113571406B (zh) * 2021-07-26 2023-06-27 福建师范大学 一种液相硒化制备硒硫化锑薄膜的方法
CN113972291A (zh) * 2021-10-12 2022-01-25 商丘师范学院 一种铜铟镓硫微纳二级阵列及其制备方法和应用
CN119654036B (zh) * 2024-12-13 2026-03-03 福州大学 一种具有均匀吸收层组分梯度的硫硒化锑太阳电池的制备方法
CN121248293A (zh) * 2025-08-19 2026-01-02 内蒙古师范大学 一种铈铜硒化合物薄膜及其制备方法与应用
CN121104211B (zh) * 2025-09-19 2026-04-21 湖南理工学院 基于超声辅助液态镓相变强化的高负载齿轮成型磨削装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8715082D0 (en) * 1987-06-26 1987-08-05 Prutec Ltd Solar cells
DE3887650T2 (de) * 1987-11-27 1994-08-04 Siemens Solar Ind Lp Herstellungsverfahren einer Dünnschichtsonnenzelle.
JPH01152766A (ja) * 1987-12-10 1989-06-15 Matsushita Electric Ind Co Ltd セレン化インジウム銅の製造方法
JPH02180715A (ja) * 1988-12-30 1990-07-13 Dowa Mining Co Ltd １　３　６族化合物の製造方法
JPH0789719A (ja) * 1993-09-20 1995-04-04 Hitachi Maxell Ltd 銅インジウム硫化物またはセレン化物の製造法
JPH08316515A (ja) * 1995-05-22 1996-11-29 Yazaki Corp 薄膜太陽電池の製造方法
JP3244408B2 (ja) * 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6127202A (en) 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
JP4982641B2 (ja) * 2000-04-12 2012-07-25 株式会社林原 半導体層、これを用いる太陽電池、及びそれらの製造方法並びに用途
EP1428243A4 (en) * 2001-04-16 2008-05-07 Bulent M Basol METHOD FOR FORMING A SEMICONDUCTOR COMPOSITION FILM FOR PRODUCING ELECTRONIC COMPONENTS AND FILM MANUFACTURED THEREOF
RU2212080C2 (ru) * 2001-11-16 2003-09-10 Государственное научное учреждение "Институт электроники НАН Беларуси" СПОСОБ ПОЛУЧЕНИЯ ХАЛЬКОПИРИТНЫХ CuInSe2, Cu (In, Ga)Se2, CuGaSe2 ТОНКИХ ПЛЕНОК
US6992202B1 (en) * 2002-10-31 2006-01-31 Ohio Aerospace Institute Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same
CN100490205C (zh) * 2003-07-10 2009-05-20 国际商业机器公司 淀积金属硫族化物膜的方法和制备场效应晶体管的方法
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
WO2005064692A1 (ja) * 2003-12-05 2005-07-14 Matsushita Electric Industrial Co., Ltd. 化合物半導体膜及び太陽電池とそれらの製造方法
US20070163383A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of nanostructured semiconductor precursor layer
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US7736940B2 (en) * 2004-03-15 2010-06-15 Solopower, Inc. Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
JP2006049768A (ja) 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Ｃｉｓ系化合物半導体薄膜太陽電池及び該太陽電池の光吸収層の製造方法
US8679587B2 (en) * 2005-11-29 2014-03-25 State of Oregon acting by and through the State Board of Higher Education action on Behalf of Oregon State University Solution deposition of inorganic materials and electronic devices made comprising the inorganic materials
ES2373147T3 (es) * 2006-01-12 2012-01-31 Heliovolt Corporation Aparato para fabricar estructuras de dominios de fase segregados, de manera controlada.
WO2007101136A2 (en) * 2006-02-23 2007-09-07 Van Duren Jeroen K J High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material
US8071419B2 (en) * 2006-06-12 2011-12-06 Nanosolar, Inc. Thin-film devices formed from solid particles
KR101030780B1 (ko) * 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
CN101471394A (zh) 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法

Also Published As

Publication number Publication date
US20110008927A1 (en) 2011-01-13
RU2446510C1 (ru) 2012-03-27
WO2009089754A1 (en) 2009-07-23
CN101471394A (zh) 2009-07-01
JP5646342B2 (ja) 2014-12-24
EP2234168A1 (en) 2010-09-29
CN101960610B (zh) 2012-04-11
JP2011508439A (ja) 2011-03-10
CN101960610A (zh) 2011-01-26
US9735297B2 (en) 2017-08-15
BRPI0821501A2 (pt) 2015-06-16
BRPI0821501B1 (pt) 2019-02-12
EP2234168A4 (en) 2015-04-29
RU2010131761A (ru) 2012-02-10
KR101633388B1 (ko) 2016-06-24
KR20100099753A (ko) 2010-09-13

Similar Documents

Publication Publication Date Title
Su et al. Surface energy engineering of buried interface for highly stable perovskite solar cells with efficiency over 25%
Fan et al. A bionic interface to suppress the coffee‐ring effect for reliable and flexible perovskite modules with a near‐90% yield rate
Zou et al. Color‐stable deep‐blue perovskite light‐emitting diodes based on Organotrichlorosilane post‐treatment
BRPI0821501A2 (pt) Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.
CN107534088B (zh) 气体诱导钙钛矿形成
BR112017002107A2 (pt) ?método para formulação de materiais de célula solar de perovskita e material de perovskita?
BR112012008508A2 (pt) revestimento de sol-gel, substrato, método para produzir um revestimento de sol-gel
WO2012055738A3 (en) Fabrication method for thin film solar cell with kesterite absorber
WO2012044978A3 (en) High efficiency solar cell device with gallium arsenide absorber layer
WO2011158119A3 (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
WO2008095146A3 (en) Solar cell absorber layer formed from metal ion precursors
GB2497909A (en) Diffusion barrier layer for thin film solar cell
NZ718864A (en) Method of preparing a photochromic optical article using an organic solvent pretreatment and photochromic coating
WO2015094549A3 (en) Sulfur-containing thin films
MX375104B (es) Un procedimiento para la transferencia de microestructuras a un sustrato final.
WO2010094048A3 (en) Solar cell absorber layer formed from equilibrium precursor(s)
EP2202804A3 (en) Method of fabricating a CIGSS solar cell
BR112013005802A2 (pt) substratos de vidro com nanotubos de carbono crescidos sobre os mesmos e métodos para sua produção
BR112015014939A2 (pt) método para fabricar dispositivos optoeletrônicos de filme fino; dispositivo optoeletrônico de filme fino passível de obtenção através do método; e aparelho
BR112014000395A2 (pt) películas de barreira de óxido de metal misto e método de deposição de camada atômica para preparar películas de barreira de óxido de metal misto
RU2012142922A (ru) Пленкообразующий раствор для диффузии бора
BR112012014980A2 (pt) célula solar película fina de silíco tendo turvação aperfeiçoada e métodos de fabricar a mesma.
BR112013006298A2 (pt) método e dispositivo para a produção de um precursor de fertilizante e de um fertilizante
WO2015066573A3 (en) Novel solution for electrophoretic deposition of nanoparticles into thin films
GB2497053A (en) Method of forming a semiconductor device

Legal Events

Date Code Title Description
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 12/02/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 12/02/2019, OBSERVADAS AS CONDICOES LEGAIS

B25A Requested transfer of rights approved

Owner name: SHANDONG SINO-SHINE PHOTOELECTRIC CO., LTD. (CN)