BRPI0907144A2 - célula de junção túnel magnética incluindo múltiplos domínios magnéticos - Google Patents
célula de junção túnel magnética incluindo múltiplos domínios magnéticosInfo
- Publication number
- BRPI0907144A2 BRPI0907144A2 BRPI0907144A BRPI0907144A BRPI0907144A2 BR PI0907144 A2 BRPI0907144 A2 BR PI0907144A2 BR PI0907144 A BRPI0907144 A BR PI0907144A BR PI0907144 A BRPI0907144 A BR PI0907144A BR PI0907144 A2 BRPI0907144 A2 BR PI0907144A2
- Authority
- BR
- Brazil
- Prior art keywords
- including multiple
- tunnel junction
- cell including
- junction cell
- magnetic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/933—Spintronics or quantum computing
- Y10S977/935—Spin dependent tunnel, SDT, junction, e.g. tunneling magnetoresistance, TMR
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/024,157 US7936596B2 (en) | 2008-02-01 | 2008-02-01 | Magnetic tunnel junction cell including multiple magnetic domains |
| PCT/US2009/032209 WO2009099826A1 (en) | 2008-02-01 | 2009-01-28 | Magnetic tunnel junction cell including multiple magnetic domains |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BRPI0907144A2 true BRPI0907144A2 (pt) | 2016-11-01 |
| BRPI0907144B1 BRPI0907144B1 (pt) | 2019-11-12 |
Family
ID=40578058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0907144-0A BRPI0907144B1 (pt) | 2008-02-01 | 2009-01-28 | célula de junção de túnel magnética incluindo múltiplos domínios magnéticos |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US7936596B2 (pt) |
| EP (1) | EP2240934B1 (pt) |
| JP (1) | JP5432187B2 (pt) |
| KR (1) | KR101187831B1 (pt) |
| CN (1) | CN101965615B (pt) |
| BR (1) | BRPI0907144B1 (pt) |
| CA (1) | CA2713337C (pt) |
| ES (1) | ES2520342T3 (pt) |
| MX (1) | MX2010008268A (pt) |
| RU (1) | RU2463676C2 (pt) |
| WO (1) | WO2009099826A1 (pt) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8634231B2 (en) | 2009-08-24 | 2014-01-21 | Qualcomm Incorporated | Magnetic tunnel junction structure |
| US7885105B2 (en) | 2008-03-25 | 2011-02-08 | Qualcomm Incorporated | Magnetic tunnel junction cell including multiple vertical magnetic domains |
| US9385308B2 (en) * | 2010-03-26 | 2016-07-05 | Qualcomm Incorporated | Perpendicular magnetic tunnel junction structure |
| US8674465B2 (en) * | 2010-08-05 | 2014-03-18 | Qualcomm Incorporated | MRAM device and integration techniques compatible with logic integration |
| US8446757B2 (en) * | 2010-08-18 | 2013-05-21 | International Business Machines Corporation | Spin-torque transfer magneto-resistive memory architecture |
| US8422287B2 (en) * | 2010-09-09 | 2013-04-16 | Magic Technologies, Inc. | Pulse field assisted spin momentum transfer MRAM design |
| US9712171B2 (en) * | 2013-09-11 | 2017-07-18 | Intel Corporation | Clocked all-spin logic circuit |
| US9559698B2 (en) * | 2013-09-30 | 2017-01-31 | Intel Corporation | Spintronic logic element |
| US9190260B1 (en) * | 2014-11-13 | 2015-11-17 | Globalfoundries Inc. | Topological method to build self-aligned MTJ without a mask |
| CN104795489A (zh) * | 2015-04-20 | 2015-07-22 | 北京航空航天大学 | 一种新型的四端磁存储器件 |
| JP6216403B2 (ja) | 2016-03-22 | 2017-10-18 | 株式会社東芝 | 磁気記憶素子及び不揮発性記憶装置 |
| US9972771B2 (en) * | 2016-03-24 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | MRAM devices and methods of forming the same |
| US11386320B2 (en) | 2019-03-06 | 2022-07-12 | International Business Machines Corporation | Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element |
| US12431214B2 (en) * | 2021-12-29 | 2025-09-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | External magnetic field detection for MRAM device |
| US12598919B2 (en) | 2022-12-09 | 2026-04-07 | International Business Machines Corporation | MRAM device with hammerhead profile |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072718A (en) * | 1998-02-10 | 2000-06-06 | International Business Machines Corporation | Magnetic memory devices having multiple magnetic tunnel junctions therein |
| JP2002025015A (ja) * | 2000-07-06 | 2002-01-25 | Sony Corp | 磁気トンネル効果型磁気ヘッド及びその製造方法 |
| JP2002111096A (ja) * | 2000-09-29 | 2002-04-12 | Toshiba Corp | 磁気抵抗素子、磁気抵抗素子を用いた半導体記憶装置、およびこれらの製造方法 |
| JP2002353415A (ja) * | 2001-05-23 | 2002-12-06 | Internatl Business Mach Corp <Ibm> | 記憶素子、メモリセル及び記憶回路ブロック |
| JP2003209228A (ja) * | 2001-11-07 | 2003-07-25 | Toshiba Corp | 磁気記憶装置及びその製造方法 |
| US6795334B2 (en) * | 2001-12-21 | 2004-09-21 | Kabushiki Kaisha Toshiba | Magnetic random access memory |
| JP3661652B2 (ja) * | 2002-02-15 | 2005-06-15 | ソニー株式会社 | 磁気抵抗効果素子および磁気メモリ装置 |
| US6621730B1 (en) * | 2002-08-27 | 2003-09-16 | Motorola, Inc. | Magnetic random access memory having a vertical write line |
| US7109539B2 (en) * | 2004-03-09 | 2006-09-19 | International Business Machines Corporation | Multiple-bit magnetic random access memory cell employing adiabatic switching |
| US7072208B2 (en) * | 2004-07-28 | 2006-07-04 | Headway Technologies, Inc. | Vortex magnetic random access memory |
| US7221584B2 (en) * | 2004-08-13 | 2007-05-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM cell having shared configuration |
| RU2310928C2 (ru) * | 2004-10-27 | 2007-11-20 | Самсунг Электроникс Ко., Лтд. | Усовершенствованное многоразрядное магнитное запоминающее устройство с произвольной выборкой и способы его функционирования и производства |
| US7154773B2 (en) * | 2005-03-31 | 2006-12-26 | Infineon Technologies Ag | MRAM cell with domain wall switching and field select |
| KR100763910B1 (ko) | 2006-02-23 | 2007-10-05 | 삼성전자주식회사 | 마그네틱 도메인 드래깅을 이용하는 자성 메모리 소자 |
| US7804668B2 (en) * | 2006-11-16 | 2010-09-28 | Headway Technologies, Inc. | Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling |
-
2008
- 2008-02-01 US US12/024,157 patent/US7936596B2/en active Active
-
2009
- 2009-01-28 WO PCT/US2009/032209 patent/WO2009099826A1/en not_active Ceased
- 2009-01-28 RU RU2010136657/08A patent/RU2463676C2/ru not_active IP Right Cessation
- 2009-01-28 EP EP09709323.1A patent/EP2240934B1/en active Active
- 2009-01-28 ES ES09709323.1T patent/ES2520342T3/es active Active
- 2009-01-28 CA CA2713337A patent/CA2713337C/en not_active Expired - Fee Related
- 2009-01-28 JP JP2010545101A patent/JP5432187B2/ja active Active
- 2009-01-28 KR KR1020107019094A patent/KR101187831B1/ko active Active
- 2009-01-28 MX MX2010008268A patent/MX2010008268A/es active IP Right Grant
- 2009-01-28 BR BRPI0907144-0A patent/BRPI0907144B1/pt active IP Right Grant
- 2009-01-28 CN CN200980107087XA patent/CN101965615B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101187831B1 (ko) | 2012-10-05 |
| EP2240934A1 (en) | 2010-10-20 |
| ES2520342T3 (es) | 2014-11-11 |
| EP2240934B1 (en) | 2014-08-27 |
| BRPI0907144B1 (pt) | 2019-11-12 |
| JP2011512030A (ja) | 2011-04-14 |
| RU2463676C2 (ru) | 2012-10-10 |
| KR20100107064A (ko) | 2010-10-04 |
| US20090194832A1 (en) | 2009-08-06 |
| CN101965615A (zh) | 2011-02-02 |
| CN101965615B (zh) | 2013-09-11 |
| WO2009099826A1 (en) | 2009-08-13 |
| CA2713337A1 (en) | 2009-08-13 |
| JP5432187B2 (ja) | 2014-03-05 |
| US7936596B2 (en) | 2011-05-03 |
| MX2010008268A (es) | 2010-10-20 |
| CA2713337C (en) | 2013-12-10 |
| RU2010136657A (ru) | 2012-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 12/11/2019, OBSERVADAS AS CONDICOES LEGAIS. (CO) 10 (DEZ) ANOS CONTADOS A PARTIR DE 12/11/2019, OBSERVADAS AS CONDICOES LEGAIS |