BRPI0908989A2 - Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo - Google Patents

Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo

Info

Publication number
BRPI0908989A2
BRPI0908989A2 BRPI0908989-6A BRPI0908989A BRPI0908989A2 BR PI0908989 A2 BRPI0908989 A2 BR PI0908989A2 BR PI0908989 A BRPI0908989 A BR PI0908989A BR PI0908989 A2 BRPI0908989 A2 BR PI0908989A2
Authority
BR
Brazil
Prior art keywords
synthetic
self
physical
field effect
mixed material
Prior art date
Application number
BRPI0908989-6A
Other languages
English (en)
Inventor
Rodrigo Ferrão De Paiva Martins
Elvira Maria Correia Fortunato
Original Assignee
Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa filed Critical Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa
Publication of BRPI0908989A2 publication Critical patent/BRPI0908989A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
BRPI0908989-6A 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo BRPI0908989A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PT103998A PT103998B (pt) 2008-03-20 2008-03-20 Dispositivos electrónicos e optoelectrónicos de efeito de campo compreendendo camadas de fibras naturais, sintéticas ou mistas e respectivo processo de fabrico
PCT/IB2009/000565 WO2009130551A1 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dieléctrico em dispositivos electrónicos e opto electrónicos auto sustentáveis de efeito de campo

Publications (1)

Publication Number Publication Date
BRPI0908989A2 true BRPI0908989A2 (pt) 2015-08-04

Family

ID=40792978

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0908989-6A BRPI0908989A2 (pt) 2008-03-20 2009-03-20 Processo de utilização de material natural celulósico, sintético ou misto, simultaneamente como suporte físico e dielétrico em dispositivos eletrônicos e optoeletrônicos autossustentáveis de efeito de campo

Country Status (12)

Country Link
US (1) US20110024842A1 (pt)
EP (1) EP2272114A1 (pt)
JP (1) JP5734177B2 (pt)
KR (1) KR101553089B1 (pt)
CN (1) CN102047461A (pt)
AU (1) AU2009239685B2 (pt)
BR (1) BRPI0908989A2 (pt)
CA (1) CA2718919C (pt)
MX (1) MX2010010225A (pt)
PT (1) PT103998B (pt)
RU (1) RU2495516C2 (pt)
WO (1) WO2009130551A1 (pt)

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JP2588200Y2 (ja) 1993-04-02 1999-01-06 三菱長崎機工株式会社 ラリーカースケール用集塵装置
PT104482A (pt) 2009-04-01 2010-10-01 Univ Nova De Lisboa Método de fabrico e criação de transístores de filme fino electrocrómicos de estrutura lateral ou vertical utilizando substratos vitrocerâmicos, poliméricos, metálicos ou de papel celulósico natural, sintético ou misto funcionalizados ou não funciona
US9301569B2 (en) 2010-06-22 2016-04-05 Nike, Inc. Article of footwear with color change portion and method of changing color
US8769836B2 (en) 2010-06-22 2014-07-08 Nike, Inc. Article of footwear with color change portion and method of changing color
US8474146B2 (en) 2010-06-22 2013-07-02 Nike, Inc. Article of footwear with color change portion and method of changing color
NZ720871A (en) 2013-12-10 2020-03-27 Illumina Inc Biosensors for biological or chemical analysis and methods of manufacturing the same
US10741477B2 (en) * 2018-03-23 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
US20240147631A1 (en) * 2021-02-26 2024-05-02 Liquid Wire, LLC Devices, systems, and methods for making and using highly sustainable circuits

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WO2001029308A1 (en) * 1999-10-15 2001-04-26 Cargill, Incorporated Fibers from plant seeds and use
SE520339C2 (sv) * 2001-03-07 2003-06-24 Acreo Ab Elektrokemisk transistoranordning och dess tillverkningsförfarande
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
FR2826153B1 (fr) * 2001-06-14 2004-05-28 A S K Procede de connexion d'une puce a une antenne d'un dispositif d'identification par radio-frequence du type carte a puce sans contact
KR100452558B1 (ko) * 2001-11-20 2004-10-14 주식회사 엘지화학 공중합성 이온 단량체를 함유하는 종이 코팅용 라텍스
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JP4356420B2 (ja) * 2003-10-20 2009-11-04 ソニー株式会社 電界効果型トランジスタ及びその製造方法
KR100615237B1 (ko) * 2004-08-07 2006-08-25 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법
JP2006186294A (ja) * 2004-12-03 2006-07-13 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法
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Also Published As

Publication number Publication date
CA2718919A1 (en) 2009-10-29
RU2495516C2 (ru) 2013-10-10
EP2272114A1 (en) 2011-01-12
CA2718919C (en) 2017-07-11
KR101553089B1 (ko) 2015-09-30
PT103998B (pt) 2011-03-10
AU2009239685B2 (en) 2014-07-17
WO2009130551A8 (pt) 2010-12-29
RU2010142240A (ru) 2012-04-27
JP2011517503A (ja) 2011-06-09
PT103998A (pt) 2009-09-21
AU2009239685A1 (en) 2009-10-29
WO2009130551A1 (pt) 2009-10-29
CN102047461A (zh) 2011-05-04
JP5734177B2 (ja) 2015-06-10
MX2010010225A (es) 2011-03-02
US20110024842A1 (en) 2011-02-03
KR20110013355A (ko) 2011-02-09

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Legal Events

Date Code Title Description
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B12B Appeal against refusal [chapter 12.2 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 13A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2662 DE 11-01-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.