BRPI0909788A2 - método para fabricar um dispositivo emissor de luz, e, dispositivo emissor de luz. - Google Patents
método para fabricar um dispositivo emissor de luz, e, dispositivo emissor de luz.Info
- Publication number
- BRPI0909788A2 BRPI0909788A2 BRPI0909788A BRPI0909788A BRPI0909788A2 BR PI0909788 A2 BRPI0909788 A2 BR PI0909788A2 BR PI0909788 A BRPI0909788 A BR PI0909788A BR PI0909788 A BRPI0909788 A BR PI0909788A BR PI0909788 A2 BRPI0909788 A2 BR PI0909788A2
- Authority
- BR
- Brazil
- Prior art keywords
- light emitting
- emitting device
- manufacturing
- light
- emitting
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/0198—Manufacture or treatment batch processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/050,082 US20090230409A1 (en) | 2008-03-17 | 2008-03-17 | Underfill process for flip-chip leds |
| US12/050082 | 2008-03-17 | ||
| PCT/IB2009/051055 WO2009115968A1 (en) | 2008-03-17 | 2009-03-13 | Underfill process for flip-chip leds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BRPI0909788A2 true BRPI0909788A2 (pt) | 2015-10-06 |
| BRPI0909788B1 BRPI0909788B1 (pt) | 2019-11-05 |
Family
ID=40677561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0909788-0A BRPI0909788B1 (pt) | 2008-03-17 | 2009-03-13 | método para fabricar um dispositivo emissor de luz |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20090230409A1 (pt) |
| EP (1) | EP2266149B1 (pt) |
| JP (1) | JP5372133B2 (pt) |
| KR (1) | KR101524004B1 (pt) |
| CN (1) | CN102084505B (pt) |
| BR (1) | BRPI0909788B1 (pt) |
| RU (1) | RU2502157C2 (pt) |
| TW (1) | TWI463701B (pt) |
| WO (1) | WO2009115968A1 (pt) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8405228B2 (en) * | 2009-03-25 | 2013-03-26 | Stats Chippac Ltd. | Integrated circuit packaging system with package underfill and method of manufacture thereof |
| US8471280B2 (en) * | 2009-11-06 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Silicone based reflective underfill and thermal coupler |
| JP2012019062A (ja) * | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | 発光半導体装置、実装基板及びそれらの製造方法 |
| US8796075B2 (en) | 2011-01-11 | 2014-08-05 | Nordson Corporation | Methods for vacuum assisted underfilling |
| CN102610703A (zh) * | 2011-01-20 | 2012-07-25 | 陈惠美 | 光电元件的封装方法 |
| US8952402B2 (en) * | 2011-08-26 | 2015-02-10 | Micron Technology, Inc. | Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods |
| US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
| CN102593317B (zh) * | 2011-12-20 | 2014-12-24 | 西安炬光科技有限公司 | 一种高功率高亮度led光源封装结构及其封装方法 |
| CN104205366B (zh) | 2012-03-30 | 2018-08-31 | 亮锐控股有限公司 | 密封的半导体发光器件 |
| JP5962285B2 (ja) | 2012-07-19 | 2016-08-03 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| JP2014179569A (ja) * | 2013-03-15 | 2014-09-25 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
| US9022607B2 (en) | 2012-10-18 | 2015-05-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Leadframe-based surface mount technology segmented display design and method of manufacture |
| CN103456729B (zh) * | 2013-07-26 | 2016-09-21 | 利亚德光电股份有限公司 | 发光二极管显示屏 |
| US9640709B2 (en) * | 2013-09-10 | 2017-05-02 | Heptagon Micro Optics Pte. Ltd. | Compact opto-electronic modules and fabrication methods for such modules |
| CN104600186A (zh) * | 2013-10-31 | 2015-05-06 | 展晶科技(深圳)有限公司 | 发光二极管封装体的制造方法 |
| US9653443B2 (en) * | 2014-02-14 | 2017-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal performance structure for semiconductor packages and method of forming same |
| US10056267B2 (en) | 2014-02-14 | 2018-08-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate design for semiconductor packages and method of forming same |
| JP2015220342A (ja) * | 2014-05-19 | 2015-12-07 | 住友電気工業株式会社 | 光半導体装置の製造方法及び光半導体装置の製造装置 |
| WO2016027186A1 (en) * | 2014-08-19 | 2016-02-25 | Koninklijke Philips N.V. | Sapphire collector for reducing mechanical damage during die level laser lift-off |
| US12364074B2 (en) | 2015-03-31 | 2025-07-15 | Creeled, Inc. | Light emitting diodes and methods |
| US12294042B2 (en) | 2015-03-31 | 2025-05-06 | Creeled, Inc. | Light emitting diodes and methods with encapsulation |
| JP6807334B2 (ja) * | 2015-05-13 | 2021-01-06 | ルミレッズ ホールディング ベーフェー | ダイレベルのリフトオフの最中におけるメカニカルダメージを低減するためのサファイアコレクタ |
| CN108140624A (zh) * | 2015-08-07 | 2018-06-08 | Qorvo美国公司 | 具有增强性质的倒装芯片模块 |
| US9831104B1 (en) * | 2015-11-06 | 2017-11-28 | Xilinx, Inc. | Techniques for molded underfill for integrated circuit dies |
| WO2017202331A1 (en) * | 2016-05-25 | 2017-11-30 | Chen-Fu Chu | Methods of filling organic or inorganic liquid in assembly module |
| DE102017104851A1 (de) | 2017-03-08 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von zumindest einem optoelektronischen Bauelement und optoelektronisches Bauelement |
| CN108630645A (zh) * | 2017-03-17 | 2018-10-09 | 永道无线射频标签(扬州)有限公司 | 一种芯片和天线基材的接合结构及其制备方法 |
| WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
| US10672957B2 (en) | 2017-07-19 | 2020-06-02 | Cree, Inc. | LED apparatuses and methods for high lumen output density |
| CN107424964A (zh) * | 2017-07-27 | 2017-12-01 | 武汉市三选科技有限公司 | 底部填充组成物及使用其之底部填充方法与电子组装组件 |
| JP7266178B2 (ja) * | 2017-11-24 | 2023-04-28 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
| KR20190084807A (ko) * | 2018-01-09 | 2019-07-17 | 서울바이오시스 주식회사 | 발광 장치 |
| JP7236807B2 (ja) * | 2018-01-25 | 2023-03-10 | 浜松ホトニクス株式会社 | 半導体装置、及び半導体装置の製造方法 |
| US10453827B1 (en) | 2018-05-30 | 2019-10-22 | Cree, Inc. | LED apparatuses and methods |
| US11101410B2 (en) | 2018-05-30 | 2021-08-24 | Creeled, Inc. | LED systems, apparatuses, and methods |
| KR102742940B1 (ko) * | 2019-03-05 | 2024-12-17 | 주식회사 루멘스 | Led 어레이 패키지 및 그 제조방법 |
| US20210399041A1 (en) * | 2020-06-18 | 2021-12-23 | Seoul Semiconductor Co., Ltd. | Light emitting module having a plurality of unit pixels, method of fabricating the same, and displaying apparatus having the same |
| US12218286B2 (en) | 2020-11-12 | 2025-02-04 | Seoul Semiconductor Co., Ltd. | Light emitting module and method of manufacturing the same and display apparatus having the same |
| CN116583949A (zh) | 2020-12-11 | 2023-08-11 | Qorvo美国公司 | 多级3d堆叠式封装和其形成方法 |
| CN113524473B (zh) * | 2021-07-09 | 2023-10-20 | 苏州晶方半导体科技股份有限公司 | 光学基板的切割方法 |
| CN118867085B (zh) * | 2024-07-11 | 2025-10-03 | 佛山市国星光电股份有限公司 | 一种led模组的制备方法及led模组 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194742B1 (en) * | 1998-06-05 | 2001-02-27 | Lumileds Lighting, U.S., Llc | Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices |
| US6133589A (en) * | 1999-06-08 | 2000-10-17 | Lumileds Lighting, U.S., Llc | AlGaInN-based LED having thick epitaxial layer for improved light extraction |
| US6506681B2 (en) * | 2000-12-06 | 2003-01-14 | Micron Technology, Inc. | Thin flip—chip method |
| JP2003197680A (ja) * | 2001-12-25 | 2003-07-11 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
| US7138293B2 (en) * | 2002-10-04 | 2006-11-21 | Dalsa Semiconductor Inc. | Wafer level packaging technique for microdevices |
| US6977396B2 (en) * | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
| RU2267188C2 (ru) * | 2003-06-23 | 2005-12-27 | Федорова Галина Владимировна | Светодиодное полупроводниковое устройство в корпусе для поверхностного монтажа |
| JP3876250B2 (ja) * | 2003-06-24 | 2007-01-31 | スタンレー電気株式会社 | 表面実装型半導体電子部品および製造方法 |
| US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| JP4608966B2 (ja) * | 2004-06-29 | 2011-01-12 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
| CN101138094B (zh) * | 2005-03-09 | 2010-10-13 | 旭化成电子材料元件株式会社 | 光学器件及光学器件的制造方法 |
| US7125734B2 (en) * | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
| US7754507B2 (en) * | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
| WO2007009042A1 (en) * | 2005-07-11 | 2007-01-18 | Gelcore Llc | Laser lift-off led with improved light extraction |
| US7718449B2 (en) * | 2005-10-28 | 2010-05-18 | Lumination Llc | Wafer level package for very small footprint and low profile white LED devices |
| JP5192646B2 (ja) * | 2006-01-16 | 2013-05-08 | Towa株式会社 | 光素子の樹脂封止方法、その樹脂封止装置、および、その製造方法 |
| US7867793B2 (en) * | 2007-07-09 | 2011-01-11 | Koninklijke Philips Electronics N.V. | Substrate removal during LED formation |
-
2008
- 2008-03-17 US US12/050,082 patent/US20090230409A1/en not_active Abandoned
-
2009
- 2009-03-13 EP EP09722834.0A patent/EP2266149B1/en active Active
- 2009-03-13 KR KR1020107023171A patent/KR101524004B1/ko active Active
- 2009-03-13 BR BRPI0909788-0A patent/BRPI0909788B1/pt active IP Right Grant
- 2009-03-13 WO PCT/IB2009/051055 patent/WO2009115968A1/en not_active Ceased
- 2009-03-13 CN CN2009801094605A patent/CN102084505B/zh active Active
- 2009-03-13 JP JP2011500333A patent/JP5372133B2/ja active Active
- 2009-03-13 RU RU2010142267/28A patent/RU2502157C2/ru active
- 2009-03-16 TW TW098108499A patent/TWI463701B/zh active
-
2011
- 2011-05-25 US US13/115,475 patent/US8273587B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5372133B2 (ja) | 2013-12-18 |
| WO2009115968A1 (en) | 2009-09-24 |
| KR20100129771A (ko) | 2010-12-09 |
| US20110223696A1 (en) | 2011-09-15 |
| EP2266149A1 (en) | 2010-12-29 |
| EP2266149B1 (en) | 2017-08-23 |
| BRPI0909788B1 (pt) | 2019-11-05 |
| US20090230409A1 (en) | 2009-09-17 |
| CN102084505B (zh) | 2013-05-01 |
| RU2502157C2 (ru) | 2013-12-20 |
| RU2010142267A (ru) | 2012-04-27 |
| TW200950158A (en) | 2009-12-01 |
| JP2011514688A (ja) | 2011-05-06 |
| TWI463701B (zh) | 2014-12-01 |
| US8273587B2 (en) | 2012-09-25 |
| CN102084505A (zh) | 2011-06-01 |
| KR101524004B1 (ko) | 2015-05-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B25D | Requested change of name of applicant approved |
Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI |
|
| B25G | Requested change of headquarter approved |
Owner name: PHILIPS LUMILEDS LIGHTING COMPANY, LLC (US) , KONI |
|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B15K | Others concerning applications: alteration of classification |
Free format text: A CLASSIFICACAO ANTERIOR ERA: H01L 33/00 Ipc: H01L 23/00 (1974.07), H01L 33/54 (2010.01) |
|
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B25D | Requested change of name of applicant approved |
Owner name: KONINKLIJKE PHILIPS N.V (NL) ; LUMILEDS LLC (US) |
|
| B25A | Requested transfer of rights approved |
Owner name: LUMILEDS HOLDING B.V. (NL) |
|
| B25B | Requested transfer of rights rejected |
Owner name: LUMILEDS HOLDING B.V. (NL) Free format text: INDEFERIDO O PEDIDO DE TRANSFERENCIA CONTIDO NA PETICAO 870190039965 DE 29/04/2019, EM VIRTUDE DA SOLICITACAO JA TER SIDO ATENDIDA PELA PETICAO 870190039177 DE 25/04/2019 E PUBLICADA NA RPI2531 DE 09/07/2019. |
|
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 05/11/2019, OBSERVADAS AS CONDICOES LEGAIS. |