BRPI0911156A2 - tft, registro de deslocamento, ciruito de acionamento de linha de sinal de varredura, dispositivo de exibição, e método de ajuste de tft - Google Patents

tft, registro de deslocamento, ciruito de acionamento de linha de sinal de varredura, dispositivo de exibição, e método de ajuste de tft

Info

Publication number
BRPI0911156A2
BRPI0911156A2 BRPI0911156A BRPI0911156A BRPI0911156A2 BR PI0911156 A2 BRPI0911156 A2 BR PI0911156A2 BR PI0911156 A BRPI0911156 A BR PI0911156A BR PI0911156 A BRPI0911156 A BR PI0911156A BR PI0911156 A2 BRPI0911156 A2 BR PI0911156A2
Authority
BR
Brazil
Prior art keywords
tft
display device
signal line
shift register
scan signal
Prior art date
Application number
BRPI0911156A
Other languages
English (en)
Inventor
Hajime Imai
Hideki Kitagawa
Shinya Tanaka
Tetsuo Kikuchi
Yoshiraru Kataoka
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of BRPI0911156A2 publication Critical patent/BRPI0911156A2/pt

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
BRPI0911156A 2008-06-12 2009-01-27 tft, registro de deslocamento, ciruito de acionamento de linha de sinal de varredura, dispositivo de exibição, e método de ajuste de tft BRPI0911156A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008154045 2008-06-12
PCT/JP2009/051236 WO2009150862A1 (ja) 2008-06-12 2009-01-27 Ｔｆｔ、シフトレジスタ、走査信号線駆動回路、および表示装置、ならびにｔｆｔの成形方法

Publications (1)

Publication Number Publication Date
BRPI0911156A2 true BRPI0911156A2 (pt) 2015-10-06

Family

ID=41416573

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0911156A BRPI0911156A2 (pt) 2008-06-12 2009-01-27 tft, registro de deslocamento, ciruito de acionamento de linha de sinal de varredura, dispositivo de exibição, e método de ajuste de tft

Country Status (6)

Country Link
US (1) US8946719B2 (pt)
JP (1) JP5341079B2 (pt)
CN (1) CN101978505B (pt)
BR (1) BRPI0911156A2 (pt)
RU (1) RU2471266C2 (pt)
WO (1) WO2009150862A1 (pt)

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CN102741913A (zh) 2010-02-08 2012-10-17 夏普株式会社 显示装置
KR101084273B1 (ko) * 2010-03-03 2011-11-16 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
EP2565877A4 (en) * 2010-04-28 2013-07-10 Sharp Kk SHIFT REGISTER AND DISPLAY DEVICE
CN102326193B (zh) * 2010-05-13 2014-11-26 松下电器产业株式会社 显示装置及其制造方法
KR101758783B1 (ko) * 2010-12-27 2017-07-18 삼성디스플레이 주식회사 게이트 구동부, 이를 포함하는 표시 기판 및 이 표시 기판의 제조 방법
FR2976127B1 (fr) * 2011-06-01 2014-01-10 Commissariat Energie Atomique Composant organique a electrodes ayant un agencement et une forme ameliores
WO2013001564A1 (ja) * 2011-06-27 2013-01-03 パナソニック株式会社 表示装置及びその製造方法
KR101813293B1 (ko) 2011-06-27 2017-12-28 가부시키가이샤 제이올레드 표시 장치 및 그 제조 방법
KR20130046847A (ko) * 2011-10-28 2013-05-08 삼성디스플레이 주식회사 표시기판 및 표시기판의 수리 방법
CN102411917A (zh) * 2011-12-21 2012-04-11 深圳市华星光电技术有限公司 液晶面板的驱动电路及液晶显示器
CN102708816B (zh) * 2012-03-02 2013-06-12 京东方科技集团股份有限公司 移位寄存器、栅极驱动装置和显示装置
SG11201406630YA (en) * 2012-04-20 2015-01-29 Sharp Kk Display device
CN104285177B (zh) 2012-05-16 2017-10-27 夏普株式会社 液晶显示器
KR101975533B1 (ko) * 2012-06-29 2019-05-08 삼성디스플레이 주식회사 구동회로, 그를 구비하는 평판표시장치 및 구동회로의 리페어 방법
CN204577057U (zh) * 2012-10-05 2015-08-19 夏普株式会社 显示装置
US9218088B2 (en) * 2012-10-11 2015-12-22 Shanghai Tianma Micro-electronics Co., Ltd. Touch screen display apparatus
CN103018991B (zh) * 2012-12-24 2015-01-28 京东方科技集团股份有限公司 一种阵列基板及其制造方法、显示装置
TWM462429U (zh) 2013-03-26 2013-09-21 中華映管股份有限公司 面板整合掃描驅動電路的電容結構
CN103715207B (zh) * 2013-12-31 2017-11-10 合肥京东方光电科技有限公司 Tft阵列基板的电容及其制造方法和相关设备
US9766517B2 (en) * 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
CN104536223A (zh) * 2014-12-30 2015-04-22 深圳市华星光电技术有限公司 液晶显示面板及其阵列基板
US10146346B2 (en) * 2015-01-27 2018-12-04 Innolux Corporation Touch display device with capacitor having large capacitance
CN106653089B (zh) * 2015-10-22 2020-06-09 上海和辉光电有限公司 移位寄存器单元、栅极驱动电路及显示装置
DE112018000567T5 (de) * 2017-01-27 2019-10-17 Sharp Kabushiki Kaisha Aktivmatrixsubstrat und anzeigevorrichtung, die dieses verwendet
WO2018155284A1 (ja) * 2017-02-21 2018-08-30 シャープ株式会社 駆動回路、ｔｆｔ基板、表示装置
CN107527599B (zh) * 2017-08-16 2020-06-05 深圳市华星光电半导体显示技术有限公司 扫描驱动电路、阵列基板与显示面板
GB2604728B (en) * 2018-09-10 2023-07-19 Pragmatic Printing Ltd Electronic circuit and method of manufacture
CN112997311B (zh) * 2019-10-18 2023-06-20 京东方科技集团股份有限公司 显示面板
TWI740484B (zh) * 2020-05-04 2021-09-21 宏碁股份有限公司 顯示裝置與其製造方法
JP7401416B2 (ja) 2020-09-11 2023-12-19 株式会社東芝 半導体装置
KR20220092030A (ko) * 2020-12-24 2022-07-01 엘지디스플레이 주식회사 발광표시패널
CN114283746B (zh) * 2021-12-29 2023-05-23 上海中航光电子有限公司 一种显示面板及显示装置

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KR100654569B1 (ko) * 2004-12-30 2006-12-05 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
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Also Published As

Publication number Publication date
CN101978505A (zh) 2011-02-16
RU2471266C2 (ru) 2012-12-27
JP5341079B2 (ja) 2013-11-13
US8946719B2 (en) 2015-02-03
WO2009150862A1 (ja) 2009-12-17
JPWO2009150862A1 (ja) 2011-11-10
US20110012880A1 (en) 2011-01-20
RU2010138946A (ru) 2012-07-20
CN101978505B (zh) 2013-03-13

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 8A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2395 DE 29-11-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.