BRPI0911627A2 - processo de produção de silício cristalino de qualidade fotovoltaica por acréscimo de impurezas dopantes e célula fotovoltaica - Google Patents

processo de produção de silício cristalino de qualidade fotovoltaica por acréscimo de impurezas dopantes e célula fotovoltaica

Info

Publication number
BRPI0911627A2
BRPI0911627A2 BRPI0911627A BRPI0911627A BRPI0911627A2 BR PI0911627 A2 BRPI0911627 A2 BR PI0911627A2 BR PI0911627 A BRPI0911627 A BR PI0911627A BR PI0911627 A BRPI0911627 A BR PI0911627A BR PI0911627 A2 BRPI0911627 A2 BR PI0911627A2
Authority
BR
Brazil
Prior art keywords
photovoltaic
production process
crystalline silicon
doping impurities
silicon production
Prior art date
Application number
BRPI0911627A
Other languages
English (en)
Inventor
Hubert Lauvray
Jed Kraiem
Roland Einhaus
Original Assignee
Apollon Solar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apollon Solar filed Critical Apollon Solar
Publication of BRPI0911627A2 publication Critical patent/BRPI0911627A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
BRPI0911627A 2008-04-11 2009-03-27 processo de produção de silício cristalino de qualidade fotovoltaica por acréscimo de impurezas dopantes e célula fotovoltaica BRPI0911627A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0801998A FR2929960B1 (fr) 2008-04-11 2008-04-11 Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes
PCT/FR2009/000346 WO2009130409A1 (fr) 2008-04-11 2009-03-27 Procédé de fabrication de silicium cristallin de qualité photovoltaïque par ajout d'impuretés dopantes et cellule photo voltaïque

Publications (1)

Publication Number Publication Date
BRPI0911627A2 true BRPI0911627A2 (pt) 2015-10-13

Family

ID=40076667

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0911627A BRPI0911627A2 (pt) 2008-04-11 2009-03-27 processo de produção de silício cristalino de qualidade fotovoltaica por acréscimo de impurezas dopantes e célula fotovoltaica

Country Status (9)

Country Link
US (1) US20110030793A1 (pt)
EP (1) EP2262933A1 (pt)
JP (1) JP2011517106A (pt)
CN (1) CN101999013A (pt)
BR (1) BRPI0911627A2 (pt)
FR (1) FR2929960B1 (pt)
RU (1) RU2010145925A (pt)
WO (1) WO2009130409A1 (pt)
ZA (1) ZA201006853B (pt)

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KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
DK2679706T3 (en) * 2011-02-23 2018-12-17 Shinetsu Handotai Kk PROCEDURE FOR MANUFACTURING N-TYPE SILICON MONO CRYSTAL
EP2697412B1 (en) * 2011-04-14 2018-07-25 GTAT IP Holding LLC Method for producing silicon ingot having axially uniform doping
JP5470349B2 (ja) * 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
CN102560641B (zh) * 2012-03-20 2015-03-25 浙江大学 一种掺杂电阻率均匀的n型铸造硅多晶及其制备方法
CN102560627B (zh) * 2012-03-20 2015-03-25 浙江大学 一种掺杂电阻率均匀的n型直拉硅单晶及其制备方法
FR2990563B1 (fr) * 2012-05-11 2014-05-09 Apollon Solar Cellule solaire a base de silicium dope de type n
WO2014106080A1 (en) * 2012-12-31 2014-07-03 Memc Electronic Materials S.P.A. Fabrication of indium-doped silicon by the czochralski method
JP6349977B2 (ja) * 2013-10-21 2018-07-04 ソニー株式会社 情報処理装置および方法、並びにプログラム
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
US10337117B2 (en) * 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
CN105019022A (zh) * 2015-08-12 2015-11-04 常州天合光能有限公司 一种镓锗硼共掺准单晶硅及其制备方法
CN105755538A (zh) * 2016-05-05 2016-07-13 中国科学院合肥物质科学研究院 一种掺锡冶金多晶硅铸锭的制备方法
CN106222742B (zh) * 2016-09-12 2019-01-29 江西赛维Ldk太阳能高科技有限公司 一种晶体硅及其制备方法
US10920337B2 (en) 2016-12-28 2021-02-16 Globalwafers Co., Ltd. Methods for forming single crystal silicon ingots with improved resistivity control
SG11202103547UA (en) 2018-10-12 2021-05-28 Globalwafers Co Ltd Dopant concentration control in silicon melt to enhance the ingot quality
CN113825862B (zh) 2019-04-11 2024-12-10 环球晶圆股份有限公司 后段主体长度具有减小变形的锭的制备工艺
SG11202111451WA (en) 2019-04-18 2021-11-29 Globalwafers Co Ltd Methods for growing a single crystal silicon ingot using continuous czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
WO2024053092A1 (ja) * 2022-09-09 2024-03-14 京セラ株式会社 ｎ型のシリコンのブロック、およびｎ型のシリコンの基板
CN117085967A (zh) * 2023-09-01 2023-11-21 四川晶科能源有限公司 一种硅料分类方法
CN117102067A (zh) * 2023-09-01 2023-11-24 四川晶科能源有限公司 一种硅料分类方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10236815A (ja) * 1997-02-28 1998-09-08 Kawasaki Steel Corp 太陽電池用シリコンの製造方法
JP4723071B2 (ja) * 2000-10-24 2011-07-13 信越半導体株式会社 シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
CN101220507A (zh) * 2007-10-08 2008-07-16 苏州阿特斯阳光电力科技有限公司 一种用于太阳能电池的硅晶片的制备方法

Also Published As

Publication number Publication date
EP2262933A1 (fr) 2010-12-22
WO2009130409A1 (fr) 2009-10-29
FR2929960B1 (fr) 2011-05-13
CN101999013A (zh) 2011-03-30
ZA201006853B (en) 2011-06-29
FR2929960A1 (fr) 2009-10-16
RU2010145925A (ru) 2012-05-20
JP2011517106A (ja) 2011-05-26
US20110030793A1 (en) 2011-02-10

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 4A, 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2344 DE 08-12-2015 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.