BRPI0913752A2 - método, dispositivo, e, estrutura - Google Patents

método, dispositivo, e, estrutura

Info

Publication number
BRPI0913752A2
BRPI0913752A2 BRPI0913752A BRPI0913752A BRPI0913752A2 BR PI0913752 A2 BRPI0913752 A2 BR PI0913752A2 BR PI0913752 A BRPI0913752 A BR PI0913752A BR PI0913752 A BRPI0913752 A BR PI0913752A BR PI0913752 A2 BRPI0913752 A2 BR PI0913752A2
Authority
BR
Brazil
Application number
BRPI0913752A
Other languages
English (en)
Inventor
Melvin B Mclaurin
Michael R Krames
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lighting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lighting Co filed Critical Koninkl Philips Electronics Nv
Publication of BRPI0913752A2 publication Critical patent/BRPI0913752A2/pt
Publication of BRPI0913752B1 publication Critical patent/BRPI0913752B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
BRPI0913752-1A 2008-09-24 2009-09-21 Método, dispositivo, e, estrutura BRPI0913752B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/236,853 2008-09-24
US12/236,853 US9117944B2 (en) 2008-09-24 2008-09-24 Semiconductor light emitting devices grown on composite substrates
PCT/IB2009/054134 WO2010035211A1 (en) 2008-09-24 2009-09-21 Semiconductor light emitting devices grown on composite substrates

Publications (2)

Publication Number Publication Date
BRPI0913752A2 true BRPI0913752A2 (pt) 2015-10-20
BRPI0913752B1 BRPI0913752B1 (pt) 2019-09-17

Family

ID=41466848

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0913752-1A BRPI0913752B1 (pt) 2008-09-24 2009-09-21 Método, dispositivo, e, estrutura

Country Status (9)

Country Link
US (1) US9117944B2 (pt)
EP (1) EP2329536B1 (pt)
JP (1) JP5734190B2 (pt)
KR (2) KR101799716B1 (pt)
CN (1) CN102165609B (pt)
BR (1) BRPI0913752B1 (pt)
RU (1) RU2515205C2 (pt)
TW (1) TWI497749B (pt)
WO (1) WO2010035211A1 (pt)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
JP5226449B2 (ja) * 2008-10-03 2013-07-03 スタンレー電気株式会社 半導体発光装置
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US8581229B2 (en) 2009-11-23 2013-11-12 Koninklijke Philips N.V. III-V light emitting device with thin n-type region
TWI414088B (zh) * 2009-12-16 2013-11-01 晶元光電股份有限公司 發光元件及其製造方法
CN102859726B (zh) * 2010-04-06 2015-09-16 首尔伟傲世有限公司 发光二极管及其制造方法
KR101165255B1 (ko) 2010-09-24 2012-07-19 서울옵토디바이스주식회사 고효율 발광 다이오드 및 그것을 제조하는 방법
KR20130088743A (ko) 2010-04-13 2013-08-08 갠 시스템즈 인크. 아일랜드 토폴로지를 이용한 고밀도 질화 갈륨 디바이스
JP5449039B2 (ja) 2010-06-07 2014-03-19 株式会社東芝 半導体発光装置及びその製造方法
JP5343040B2 (ja) * 2010-06-07 2013-11-13 株式会社東芝 半導体発光装置
DE102011013052A1 (de) * 2011-03-04 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterbauelements
CN103563099A (zh) * 2011-06-01 2014-02-05 皇家飞利浦有限公司 键合到支撑衬底的发光器件
JP5869678B2 (ja) 2011-09-16 2016-02-24 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード及びそれを製造する方法
DE102011113775B9 (de) * 2011-09-19 2021-10-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012101409A1 (de) * 2011-12-23 2013-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
FR2992466A1 (fr) * 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
CN103579431A (zh) * 2012-08-07 2014-02-12 华夏光股份有限公司 半导体发光结构及其制造方法
DE102012111123A1 (de) * 2012-09-26 2014-03-27 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
US8765563B2 (en) * 2012-09-28 2014-07-01 Intel Corporation Trench confined epitaxially grown device layer(s)
CN103227265B (zh) * 2013-04-12 2015-08-19 厦门大学 一种氮化镓基垂直腔面发射激光器的制作方法
CN105518886A (zh) * 2013-12-02 2016-04-20 东芝北斗电子株式会社 发光单元、发光装置及发光单元的制造方法
KR102181398B1 (ko) * 2014-06-11 2020-11-23 엘지이노텍 주식회사 발광소자 및 조명시스템
WO2016209892A1 (en) * 2015-06-22 2016-12-29 University Of South Carolina DOUBLE MESA LARGE AREA AlInGaBN LED DESIGN FOR DEEP UV AND OTHER APPLICATIONS
WO2016209886A1 (en) 2015-06-22 2016-12-29 University Of South Carolina MOCVD SYSTEM INJECTOR FOR FAST GROWTH OF AlInGaBN MATERIAL
DE102015114587A1 (de) * 2015-09-01 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
FR3063571B1 (fr) 2017-03-01 2021-04-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat donneur pour la formation de dispositifs optoelectroniques, collection de substrats issus de ce procede
KR102381866B1 (ko) * 2017-05-02 2022-04-04 서울바이오시스 주식회사 자외선 발광 다이오드
TWI689092B (zh) * 2017-06-09 2020-03-21 美商晶典有限公司 具有透光基材之微發光二極體顯示模組及其製造方法
FR3086100B1 (fr) 2018-09-13 2022-08-12 Commissariat Energie Atomique Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
KR102590229B1 (ko) 2018-10-15 2023-10-17 삼성전자주식회사 Led 소자 및 led 소자의 제조 방법
DE102019121678B4 (de) * 2019-08-12 2025-02-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit verbesserter wärmeabfuhr und verfahren zur herstellung eines bauelements
GB2586862B (en) 2019-09-06 2021-12-15 Plessey Semiconductors Ltd LED precursor incorporating strain relaxing structure
FR3104809B1 (fr) * 2019-12-11 2021-12-17 Commissariat Energie Atomique Procede de realisation d’une couche de materiau structuree

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142728A (ja) * 2001-11-02 2003-05-16 Sharp Corp 半導体発光素子の製造方法
US6869812B1 (en) * 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
WO2005008791A2 (en) 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
JP2004048067A (ja) 2003-10-14 2004-02-12 Sanyo Electric Co Ltd 発光部品およびその製造方法
US7285801B2 (en) * 2004-04-02 2007-10-23 Lumination, Llc LED with series-connected monolithically integrated mesas
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20050274970A1 (en) * 2004-06-14 2005-12-15 Lumileds Lighting U.S., Llc Light emitting device with transparent substrate having backside vias
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7525248B1 (en) * 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
KR101138944B1 (ko) * 2005-01-26 2012-04-25 서울옵토디바이스주식회사 직렬 연결된 복수개의 발광셀들을 갖는 발광 소자 및그것을 제조하는 방법
RU2277736C1 (ru) * 2005-02-02 2006-06-10 Закрытое акционерное общество "Нитридные источники света" Полупроводниковый элемент, излучающий свет в синей области видимого спектра
CN1697205A (zh) 2005-04-15 2005-11-16 南昌大学 在硅衬底上制备铟镓铝氮薄膜及发光器件的方法
US8163575B2 (en) * 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
JP2008544540A (ja) * 2005-06-22 2008-12-04 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
US7273798B2 (en) * 2005-08-01 2007-09-25 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Gallium nitride device substrate containing a lattice parameter altering element
US8334155B2 (en) * 2005-09-27 2012-12-18 Philips Lumileds Lighting Company Llc Substrate for growing a III-V light emitting device
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
US7514721B2 (en) * 2005-11-29 2009-04-07 Koninklijke Philips Electronics N.V. Luminescent ceramic element for a light emitting device
JP2007173465A (ja) * 2005-12-21 2007-07-05 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP2007266589A (ja) 2006-03-01 2007-10-11 Kyocera Corp 窒化ガリウム系化合物半導体の製造方法、窒化ガリウム系化合物半導体、発光素子の製造方法及び発光素子
US7795600B2 (en) * 2006-03-24 2010-09-14 Goldeneye, Inc. Wavelength conversion chip for use with light emitting diodes and method for making same
JP4901453B2 (ja) 2006-12-20 2012-03-21 東芝ディスクリートテクノロジー株式会社 半導体発光素子
US7547908B2 (en) * 2006-12-22 2009-06-16 Philips Lumilieds Lighting Co, Llc III-nitride light emitting devices grown on templates to reduce strain
US20080157090A1 (en) * 2006-12-28 2008-07-03 Darren Brent Thomson Transplanted epitaxial regrowth for fabricating large area substrates for electronic devices
JP2010517274A (ja) * 2007-01-22 2010-05-20 クリー レッド ライティング ソリューションズ、インコーポレイテッド 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
KR100849826B1 (ko) * 2007-03-29 2008-07-31 삼성전기주식회사 발광소자 및 이를 포함하는 패키지
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드

Also Published As

Publication number Publication date
US9117944B2 (en) 2015-08-25
WO2010035211A1 (en) 2010-04-01
KR20160096210A (ko) 2016-08-12
EP2329536A1 (en) 2011-06-08
TWI497749B (zh) 2015-08-21
RU2515205C2 (ru) 2014-05-10
BRPI0913752B1 (pt) 2019-09-17
EP2329536B1 (en) 2018-08-15
CN102165609A (zh) 2011-08-24
JP2012503861A (ja) 2012-02-09
JP5734190B2 (ja) 2015-06-17
KR20110055745A (ko) 2011-05-25
RU2011116095A (ru) 2012-10-27
TW201019513A (en) 2010-05-16
US20100072489A1 (en) 2010-03-25
KR101799716B1 (ko) 2017-11-20
CN102165609B (zh) 2013-12-04
KR101674228B1 (ko) 2016-11-08

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Legal Events

Date Code Title Description
B25D Requested change of name of applicant approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B25G Requested change of headquarter approved

Owner name: PHILIPS LUMILEDS LIGHTING COMPANY LLC (US) , KONIN

B06T Formal requirements before examination [chapter 6.20 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B25D Requested change of name of applicant approved

Owner name: KONINKLIJKE PHILIPS N. V. (NL) ; LUMILEDS LLC

B09A Decision: intention to grant [chapter 9.1 patent gazette]
B25A Requested transfer of rights approved

Owner name: LUMILEDS LLC (US) ; LUMILEDS HOLDING B.V. (NL)

B25A Requested transfer of rights approved

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