BRPI0917538A2 - formação de um filme de óxido condutor transparente para uso em uma estrutura fotovoltaica - Google Patents

formação de um filme de óxido condutor transparente para uso em uma estrutura fotovoltaica

Info

Publication number
BRPI0917538A2
BRPI0917538A2 BRPI0917538A BRPI0917538A BRPI0917538A2 BR PI0917538 A2 BRPI0917538 A2 BR PI0917538A2 BR PI0917538 A BRPI0917538 A BR PI0917538A BR PI0917538 A BRPI0917538 A BR PI0917538A BR PI0917538 A2 BRPI0917538 A2 BR PI0917538A2
Authority
BR
Brazil
Prior art keywords
forming
oxide film
transparent conductive
conductive oxide
photovoltaic structure
Prior art date
Application number
BRPI0917538A
Other languages
English (en)
Inventor
Daniel Lincot
Jean Rousset
Original Assignee
Centre Nat Rech Scient
Electricite De France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Electricite De France filed Critical Centre Nat Rech Scient
Publication of BRPI0917538A2 publication Critical patent/BRPI0917538A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/08—Mirrors; Reflectors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
BRPI0917538A 2008-08-01 2009-07-28 formação de um filme de óxido condutor transparente para uso em uma estrutura fotovoltaica BRPI0917538A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0855344A FR2934611B1 (fr) 2008-08-01 2008-08-01 Elaboration de couche d'oxyde transparente et conductrice pour utilisation dans une structure photovoltaique.
PCT/FR2009/051518 WO2010012955A2 (fr) 2008-08-01 2009-07-28 Elaboration de couche d'oxyde transparente et conductrice pour utilisation dans une structure photovoltaïque

Publications (1)

Publication Number Publication Date
BRPI0917538A2 true BRPI0917538A2 (pt) 2015-11-17

Family

ID=40418853

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0917538A BRPI0917538A2 (pt) 2008-08-01 2009-07-28 formação de um filme de óxido condutor transparente para uso em uma estrutura fotovoltaica

Country Status (9)

Country Link
US (1) US20110132764A1 (pt)
EP (1) EP2318572B1 (pt)
JP (1) JP5535211B2 (pt)
KR (1) KR20110110761A (pt)
CN (1) CN102159753B (pt)
BR (1) BRPI0917538A2 (pt)
CA (1) CA2732559C (pt)
FR (1) FR2934611B1 (pt)
WO (1) WO2010012955A2 (pt)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101449942B1 (ko) 2012-01-17 2014-10-17 주식회사 호진플라텍 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법
DE102012214925B3 (de) * 2012-08-22 2013-10-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum lichtinduzierten oder lichtunterstützten Abscheiden von Metall auf einer Oberfläche eines Halbleiterbauelements sowie damit hergestelltes Halbleiterbauelement
KR101370637B1 (ko) 2012-10-19 2014-03-12 한국과학기술연구원 Ｃｉｓ계 박막 코팅 장치
CN103173829A (zh) * 2013-04-19 2013-06-26 济南大学 一种电化学沉积制备碲化镉半导体薄膜的方法
FR3006108B1 (fr) 2013-05-22 2016-12-02 Electricite De France Procede de fabrication d'un dispositif photosensible
CN107119323B (zh) * 2017-04-27 2019-08-06 云南北方驰宏光电有限公司 一种CVDZnS晶体材料的掺杂改性方法
KR102011041B1 (ko) * 2017-09-12 2019-08-14 한국과학기술연구원 화합물 박막 제조 방법, 이로부터 제조된 화합물 박막 및 이러한 화합물 박막을 포함하는 태양 전지
KR102262616B1 (ko) * 2019-05-20 2021-06-08 영남대학교 산학협력단 Uv를 이용한 태양전지 버퍼층의 제조 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644638A (en) * 1983-08-01 1987-02-24 Union Oil Company Of California Photovoltaic device prepared by electroless deposition
US4626322A (en) * 1983-08-01 1986-12-02 Union Oil Company Of California Photoelectrochemical preparation of a solid-state semiconductor photonic device
US4507181A (en) * 1984-02-17 1985-03-26 Energy Conversion Devices, Inc. Method of electro-coating a semiconductor device
US4657833A (en) * 1986-02-11 1987-04-14 E. I. Du Pont De Nemours And Company Photosensitive cathode for deposition of metal structures within organic polymeric films
JP3527815B2 (ja) * 1996-11-08 2004-05-17 昭和シェル石油株式会社 薄膜太陽電池の透明導電膜の製造方法
JP3327811B2 (ja) * 1997-05-13 2002-09-24 キヤノン株式会社 酸化亜鉛薄膜の製造方法、それを用いた光起電力素子及び半導体素子基板の製造方法
JPH11150282A (ja) * 1997-11-17 1999-06-02 Canon Inc 光起電力素子及びその製造方法
US6310281B1 (en) * 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
CN101443929A (zh) * 2004-11-10 2009-05-27 德斯塔尔科技公司 使用含碱层的过程和光电装置
US20080105293A1 (en) * 2006-11-02 2008-05-08 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
DE102007038120A1 (de) * 2007-07-31 2009-02-05 Gebr. Schmid Gmbh & Co. Verfahren zur Beschichtung von Solarzellen sowie Vorrichtung hierfür
JP2009114481A (ja) * 2007-11-02 2009-05-28 Canon Inc 電析膜の形成方法、薄膜太陽電池及びその製造方法

Also Published As

Publication number Publication date
US20110132764A1 (en) 2011-06-09
CA2732559A1 (fr) 2010-02-04
WO2010012955A3 (fr) 2010-03-25
JP2011530163A (ja) 2011-12-15
KR20110110761A (ko) 2011-10-07
WO2010012955A2 (fr) 2010-02-04
EP2318572A2 (fr) 2011-05-11
CN102159753A (zh) 2011-08-17
FR2934611B1 (fr) 2011-03-11
JP5535211B2 (ja) 2014-07-02
CA2732559C (fr) 2016-06-14
EP2318572B1 (fr) 2018-05-16
FR2934611A1 (fr) 2010-02-05
CN102159753B (zh) 2014-08-27

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2472 DE 22-05-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.