BRPI0919056A2 - elemento magnético utilizando passivação de parede lateral protetora - Google Patents

elemento magnético utilizando passivação de parede lateral protetora

Info

Publication number
BRPI0919056A2
BRPI0919056A2 BRPI0919056A BRPI0919056A BRPI0919056A2 BR PI0919056 A2 BRPI0919056 A2 BR PI0919056A2 BR PI0919056 A BRPI0919056 A BR PI0919056A BR PI0919056 A BRPI0919056 A BR PI0919056A BR PI0919056 A2 BRPI0919056 A2 BR PI0919056A2
Authority
BR
Brazil
Prior art keywords
side wall
magnetic element
protective side
wall passivation
passivation
Prior art date
Application number
BRPI0919056A
Other languages
English (en)
Inventor
Seung Yoon Sei
H Kang Seung
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BRPI0919056A2 publication Critical patent/BRPI0919056A2/pt
Publication of BRPI0919056B1 publication Critical patent/BRPI0919056B1/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
BRPI0919056-2A 2008-09-24 2009-09-18 Elemento magnético utilizando passivação de parede lateral protetora BRPI0919056B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/236,943 2008-09-24
US12/236,943 US8482966B2 (en) 2008-09-24 2008-09-24 Magnetic element utilizing protective sidewall passivation
PCT/US2009/057523 WO2010036581A1 (en) 2008-09-24 2009-09-18 Magnetic element utilizing protective sidewall passivation

Publications (2)

Publication Number Publication Date
BRPI0919056A2 true BRPI0919056A2 (pt) 2018-01-09
BRPI0919056B1 BRPI0919056B1 (pt) 2019-09-17

Family

ID=41397538

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0919056-2A BRPI0919056B1 (pt) 2008-09-24 2009-09-18 Elemento magnético utilizando passivação de parede lateral protetora

Country Status (9)

Country Link
US (1) US8482966B2 (pt)
EP (1) EP2342767B1 (pt)
JP (1) JP5415543B2 (pt)
KR (1) KR101331511B1 (pt)
CN (1) CN102160204B (pt)
BR (1) BRPI0919056B1 (pt)
ES (1) ES2397820T3 (pt)
TW (1) TWI395356B (pt)
WO (1) WO2010036581A1 (pt)

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US10516100B2 (en) 2017-06-12 2019-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
US10038138B1 (en) 2017-10-10 2018-07-31 Headway Technologies, Inc. High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions
US10439129B2 (en) * 2018-01-18 2019-10-08 Globalfoundries Inc. Shielded MRAM cell
US10374154B1 (en) 2018-01-18 2019-08-06 Globalfoundries Inc. Methods of shielding an embedded MRAM array on an integrated circuit product comprising CMOS based transistors
US11139341B2 (en) 2018-06-18 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. Protection of MRAM from external magnetic field using magnetic-field-shielding structure
US11088083B2 (en) 2018-06-29 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. DC and AC magnetic field protection for MRAM device using magnetic-field-shielding structure
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
US11043251B2 (en) * 2018-11-30 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction device and method of forming same
CN111435703B (zh) 2019-01-14 2024-03-22 联华电子股份有限公司 磁隧穿结装置及其形成方法
US11165017B2 (en) * 2019-03-15 2021-11-02 International Business Machines Corporation Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield
CN111969103B (zh) 2019-05-20 2023-10-10 联华电子股份有限公司 半导体元件及其制作方法
TWI815948B (zh) 2019-08-14 2023-09-21 聯華電子股份有限公司 半導體元件及其製作方法
CN114695431B (zh) * 2020-12-28 2025-09-26 浙江驰拓科技有限公司 一种半导体器件
US12178137B2 (en) 2021-07-30 2024-12-24 International Business Machines Corporation In-array magnetic shield for spin-transfer torque magneto-resistive random access memory
US12575332B2 (en) 2022-10-08 2026-03-10 International Business Machines Corporation CoFeB based magnetic tunnel junction device with boron encapsulation layer

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Also Published As

Publication number Publication date
TW201029238A (en) 2010-08-01
TWI395356B (zh) 2013-05-01
WO2010036581A1 (en) 2010-04-01
KR101331511B1 (ko) 2013-11-20
CN102160204A (zh) 2011-08-17
US8482966B2 (en) 2013-07-09
EP2342767B1 (en) 2012-11-21
BRPI0919056B1 (pt) 2019-09-17
KR20110074559A (ko) 2011-06-30
EP2342767A1 (en) 2011-07-13
JP2012503885A (ja) 2012-02-09
ES2397820T3 (es) 2013-03-11
JP5415543B2 (ja) 2014-02-12
US20100072566A1 (en) 2010-03-25
CN102160204B (zh) 2014-09-03

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Legal Events

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B15K Others concerning applications: alteration of classification

Free format text: A CLASSIFICACAO ANTERIOR ERA: H01L 43/08

Ipc: G01R 33/09 (1980.01), H01L 43/08 (1974.07)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 18/09/2009, OBSERVADAS AS CONDICOES LEGAIS. (CO) 20 (VINTE) ANOS CONTADOS A PARTIR DE 18/09/2009, OBSERVADAS AS CONDICOES LEGAIS