BRPI0919221A2 - fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo - Google Patents

fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo

Info

Publication number
BRPI0919221A2
BRPI0919221A2 BRPI0919221A BRPI0919221A BRPI0919221A2 BR PI0919221 A2 BRPI0919221 A2 BR PI0919221A2 BR PI0919221 A BRPI0919221 A BR PI0919221A BR PI0919221 A BRPI0919221 A BR PI0919221A BR PI0919221 A2 BRPI0919221 A2 BR PI0919221A2
Authority
BR
Brazil
Prior art keywords
layer
shallow
manufacturing
thin active
active layer
Prior art date
Application number
BRPI0919221A
Other languages
English (en)
Inventor
Narayan Dass Taneja
Peter Steven Sui
Original Assignee
Osi Optoelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osi Optoelectronics Inc filed Critical Osi Optoelectronics Inc
Publication of BRPI0919221A2 publication Critical patent/BRPI0919221A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
BRPI0919221A 2008-09-15 2009-09-15 fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo BRPI0919221A2 (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9687708P 2008-09-15 2008-09-15
US9976808P 2008-09-24 2008-09-24
US15973209P 2009-03-12 2009-03-12
PCT/US2009/056875 WO2010031011A2 (en) 2008-09-15 2009-09-15 Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same

Publications (1)

Publication Number Publication Date
BRPI0919221A2 true BRPI0919221A2 (pt) 2015-12-08

Family

ID=42005808

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0919221A BRPI0919221A2 (pt) 2008-09-15 2009-09-15 fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo

Country Status (8)

Country Link
US (3) US8766392B2 (pt)
EP (1) EP2335288A4 (pt)
JP (1) JP2012503314A (pt)
CN (1) CN102217082B (pt)
BR (1) BRPI0919221A2 (pt)
GB (1) GB2476019B (pt)
MX (1) MX2011002852A (pt)
WO (1) WO2010031011A2 (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
DE102010013806B4 (de) 2010-04-03 2021-06-10 Merck Patent Gmbh Materialien für organische Elektrolumineszenzvorrichtungen
US20130334639A1 (en) * 2012-06-18 2013-12-19 Aeroflex Colorado Springs Inc. Photodiode with reduced dead-layer region
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
EP2793273B1 (en) * 2013-04-17 2016-12-28 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Silicon photomultiplier with very low optical cross-talk and improved readout
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
WO2015148527A1 (en) 2014-03-26 2015-10-01 University Of Houston System Radiation and temperature hard multi-pixel avalanche photodiodes
US10204737B2 (en) * 2014-06-11 2019-02-12 Avx Corporation Low noise capacitors
US20160291105A1 (en) * 2015-02-24 2016-10-06 New York University Multi-parametric pet-mr imaging and multi-modality joint image reconstruction
US10418402B2 (en) * 2017-11-30 2019-09-17 Stmicroelectronics (Research & Development) Limited Near ultraviolet photocell
CN108356489B (zh) * 2018-03-13 2020-02-21 浙江易锋机械有限公司 一种涡轮压缩机str动盘锻件加工方法
CN109863509B (zh) * 2019-01-23 2024-04-09 深圳市汇顶科技股份有限公司 光电传感器及其制备方法
EP4080585A4 (en) * 2019-12-20 2024-01-17 Nichia Corporation LIGHT RECEIVING ELEMENT AND LIGHT RECEIVING DEVICE
WO2022122822A1 (en) * 2020-12-11 2022-06-16 Ams-Osram Ag Photodiode device with enhanced characteristics
CN115064602B (zh) * 2022-06-29 2023-11-14 中国电子科技集团公司第四十四研究所 单光子雪崩光电二极管及其制造方法

Family Cites Families (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041226A (en) 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US3765969A (en) 1970-07-13 1973-10-16 Bell Telephone Labor Inc Precision etching of semiconductors
US3801390A (en) 1970-12-28 1974-04-02 Bell Telephone Labor Inc Preparation of high resolution shadow masks
US3713921A (en) 1971-04-01 1973-01-30 Gen Electric Geometry control of etched nuclear particle tracks
FR2154294B1 (pt) 1971-09-27 1974-01-04 Silec Semi Conducteurs
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
US3808068A (en) 1972-12-11 1974-04-30 Bell Telephone Labor Inc Differential etching of garnet materials
US4079405A (en) 1974-07-05 1978-03-14 Hitachi, Ltd. Semiconductor photodetector
US3982269A (en) 1974-11-22 1976-09-21 General Electric Company Semiconductor devices and method, including TGZM, of making same
FR2426335A1 (fr) 1978-05-19 1979-12-14 Radiotechnique Compelec Dispositif semi-conducteur monolithique comportant une pluralite de cellules photosensibles
US4200472A (en) 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4238760A (en) 1978-10-06 1980-12-09 Recognition Equipment Incorporated Multi-spectrum photodiode devices
US4190467A (en) 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4210923A (en) 1979-01-02 1980-07-01 Bell Telephone Laboratories, Incorporated Edge illuminated photodetector with optical fiber alignment
US4290844A (en) 1979-02-26 1981-09-22 Carson Alexiou Corporation Focal plane photo-detector mosaic array fabrication
US4329702A (en) 1980-04-23 1982-05-11 Rca Corporation Low cost reduced blooming device and method for making the same
US4616247A (en) 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
FR2581482B1 (fr) * 1985-05-03 1987-07-10 Labo Electronique Physique Photodiode pin a faible courant de fuite
JPH0640023B2 (ja) * 1986-09-25 1994-05-25 株式会社神戸製鋼所 光入力の位置・分散検出方法および装置
NL8700370A (nl) 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
JPH022691A (ja) 1988-06-17 1990-01-08 Nec Corp 半導体受光素子
US4998013A (en) * 1988-12-27 1991-03-05 Hewlett-Packard Company Optical encoder with inactive photodetectors
US4904861A (en) * 1988-12-27 1990-02-27 Hewlett-Packard Company Optical encoder using sufficient inactive photodetectors to make leakage current equal throughout
US4887140A (en) * 1989-04-27 1989-12-12 Board Of Regents, The Univ. Of Texas System Clover design lateral effect position-sensitive device
US5053318A (en) 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
US5237197A (en) * 1989-06-26 1993-08-17 University Of Hawaii Integrated VLSI radiation/particle detector with biased pin diodes
DE69019498T2 (de) * 1989-12-27 1996-02-29 Nippon Electric Co Optische Halbleitervorrichtung.
US5127998A (en) 1990-01-02 1992-07-07 General Electric Company Area-selective metallization process
JPH03220782A (ja) 1990-01-25 1991-09-27 Mitsubishi Electric Corp 半導体受光装置
JPH0831409B2 (ja) * 1990-02-14 1996-03-27 株式会社東芝 化合物半導体装置およびその製造方法
US5049962A (en) 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
JP2817995B2 (ja) * 1990-03-15 1998-10-30 富士通株式会社 ▲ｉｉｉ▼―▲ｖ▼族化合物半導体ヘテロ構造基板および▲ｉｉｉ▼―▲ｖ▼族化合物ヘテロ構造半導体装置
GB9009726D0 (en) * 1990-05-01 1990-06-20 British Telecomm Optoelectronic device
JPH04111478A (ja) 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
JPH04179278A (ja) * 1990-11-13 1992-06-25 Sumitomo Electric Ind Ltd 受光素子
JP2719230B2 (ja) * 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
JPH053337A (ja) 1990-11-28 1993-01-08 Hitachi Ltd 半導体放射線検出装置及び半導体放射線検出器並びにその製造方法
JP2557745B2 (ja) 1991-01-30 1996-11-27 三洋電機株式会社 光半導体装置
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5276955A (en) * 1992-04-14 1994-01-11 Supercomputer Systems Limited Partnership Multilayer interconnect system for an area array interconnection using solid state diffusion
JP2793085B2 (ja) 1992-06-25 1998-09-03 三洋電機株式会社 光半導体装置とその製造方法
FR2702308B1 (fr) 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
DE69321822T2 (de) * 1993-05-19 1999-04-01 Hewlett-Packard Gmbh, 71034 Boeblingen Photodiodenstruktur
US5408122A (en) * 1993-12-01 1995-04-18 Eastman Kodak Company Vertical structure to minimize settling times for solid state light detectors
US5543736A (en) 1993-12-10 1996-08-06 United Technologies Corporation Gate array architecture and layout for deep space applications
JP3352840B2 (ja) 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5446308A (en) 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
US5449926A (en) * 1994-05-09 1995-09-12 Motorola, Inc. High density LED arrays with semiconductor interconnects
US5517052A (en) 1994-06-24 1996-05-14 General Electric Company Deep-diffused phototransistor
SE506654C2 (sv) * 1994-09-16 1998-01-26 Sitek Electro Optics Ab Positionskänslig fotodetektor med eliminerad inverkan av ströljus
US5576559A (en) * 1994-11-01 1996-11-19 Intevac, Inc. Heterojunction electron transfer device
JPH08204224A (ja) 1995-01-23 1996-08-09 Sumitomo Electric Ind Ltd 化合物半導体受光素子及びその製造方法
US5670817A (en) 1995-03-03 1997-09-23 Santa Barbara Research Center Monolithic-hybrid radiation detector/readout
US5587589A (en) * 1995-03-22 1996-12-24 Motorola Two dimensional organic light emitting diode array for high density information image manifestation apparatus
FR2735907B1 (fr) 1995-06-22 1997-09-05 Sgs Thomson Microelectronics Assemblage monolitique de composants semiconducteurs incluant une diode rapide
US5698454A (en) 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT
CN1155107C (zh) * 1995-10-05 2004-06-23 埃伯乐太阳能公司 具有自对准局域深扩散发射极的太阳能电池及其制造方法
DE19549228A1 (de) * 1995-12-21 1997-06-26 Heidenhain Gmbh Dr Johannes Optoelektronisches Sensor-Bauelement
US5889313A (en) 1996-02-08 1999-03-30 University Of Hawaii Three-dimensional architecture for solid state radiation detectors
US5818096A (en) * 1996-04-05 1998-10-06 Nippon Telegraph And Telephone Corp. Pin photodiode with improved frequency response and saturation output
FR2751133B1 (fr) 1996-07-12 1998-11-06 Sgs Thomson Microelectronics Assemblage monolithique de thyristors a cathode commune
FR2751790B1 (fr) 1996-07-26 1998-11-27 Sgs Thomson Microelectronics Assemblage monolithique d'un transistor igbt et d'une diode rapide
US5777352A (en) 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
US5880482A (en) 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector
US6204087B1 (en) 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors
US6218704B1 (en) 1997-05-07 2001-04-17 International Business Machines Corporation ESD protection structure and method
US6121552A (en) 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
US5923720A (en) * 1997-06-17 1999-07-13 Molecular Metrology, Inc. Angle dispersive x-ray spectrometer
US6144379A (en) 1997-11-20 2000-11-07 International Business Machines Corporation Computer controlled user interactive display system for presenting graphs with interactive icons for accessing related graphs
JP3484962B2 (ja) * 1997-12-09 2004-01-06 住友電気工業株式会社 受光素子
FR2773265B1 (fr) 1997-12-30 2000-03-10 Sgs Thomson Microelectronics Circuit de protection d'interface d'abonnes
WO1999039391A1 (fr) 1998-01-30 1999-08-05 Hamamatsu Photonics K.K. DISPOSITIF A SEMI-CONDUCTEUR RECEPTEUR DE LUMIERE COMPORTANT UN BiCMOS INTEGRE ET UNE PHOTODIODE A AVALANCHE
US6303967B1 (en) 1998-02-05 2001-10-16 Integration Associates, Inc. Process for producing an isolated planar high speed pin photodiode
US6027956A (en) 1998-02-05 2000-02-22 Integration Associates, Inc. Process for producing planar dielectrically isolated high speed pin photodiode
US6458619B1 (en) 1998-02-05 2002-10-01 Integration Associates, Inc. Process for producing an isolated planar high speed pin photodiode with improved capacitance
US6563851B1 (en) 1998-04-13 2003-05-13 Ricoh Company, Ltd. Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
US6352517B1 (en) * 1998-06-02 2002-03-05 Stephen Thomas Flock Optical monitor of anatomical movement and uses thereof
US6326300B1 (en) 1998-09-21 2001-12-04 Taiwan Semiconductor Manufacturing Company Dual damascene patterned conductor layer formation method
US6219684B1 (en) * 1998-09-30 2001-04-17 Intel Corporation Optimized rounding in underflow handlers
US6326649B1 (en) * 1999-01-13 2001-12-04 Agere Systems, Inc. Pin photodiode having a wide bandwidth
AU3594000A (en) * 1999-03-01 2000-09-21 Sensors Unlimited Inc. Epitaxially grown p-type diffusion source for photodiode fabrication
US6573581B1 (en) 1999-03-01 2003-06-03 Finisar Corporation Reduced dark current pin photo diodes using intentional doping
US6483130B1 (en) 1999-03-24 2002-11-19 Honeywell International Inc. Back-illuminated heterojunction photodiode
AU5784400A (en) 1999-07-02 2001-01-22 Digirad Corporation Indirect back surface contact to semiconductor devices
CA2307745A1 (en) 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
US6690078B1 (en) 1999-08-05 2004-02-10 Integration Associates, Inc. Shielded planar dielectrically isolated high speed pin photodiode and method for producing same
US6168965B1 (en) 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
GB9919764D0 (en) 1999-08-21 1999-10-27 Koninkl Philips Electronics Nv Thyristors and their manufacture
US7253047B2 (en) * 1999-09-01 2007-08-07 Micron Technology, Inc. Semiconductor processing methods of forming transistors, semiconductor processing methods of forming dynamic random access memory circuitry, and related integrated circuitry
JP3374912B2 (ja) 1999-11-19 2003-02-10 日本電気株式会社 半導体集積回路及びその製造方法
US6277668B1 (en) 2000-01-04 2001-08-21 Lucent Technologies, Inc. Optical detector for minimizing optical crosstalk
JP2004507881A (ja) * 2000-04-20 2004-03-11 ディジラッド・コーポレーション 低漏洩電流の裏面照射フォトダイオードの製造
US6677182B2 (en) * 2000-04-20 2004-01-13 Digirad Corporation Technique for suppression of edge current in semiconductor devices
JP2001305365A (ja) * 2000-04-25 2001-10-31 Nec Corp 光導波路モジュールにおける迷光の遮光構造
US6438296B1 (en) * 2000-05-22 2002-08-20 Lockhead Martin Corporation Fiber optic taper coupled position sensing module
JP3994655B2 (ja) 2000-11-14 2007-10-24 住友電気工業株式会社 半導体受光素子
US6426991B1 (en) * 2000-11-16 2002-07-30 Koninklijke Philips Electronics N.V. Back-illuminated photodiodes for computed tomography detectors
US6504158B2 (en) * 2000-12-04 2003-01-07 General Electric Company Imaging array minimizing leakage currents
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
US6541836B2 (en) 2001-02-21 2003-04-01 Photon Imaging, Inc. Semiconductor radiation detector with internal gain
US6713768B2 (en) 2001-04-16 2004-03-30 Photon Imaging, Inc. Junction-side illuminated silicon detector arrays
TW483176B (en) * 2001-05-31 2002-04-11 United Microelectronics Corp Method for decreasing leakage current of photodiode
EP1270924A3 (en) * 2001-06-28 2004-01-07 Delphi Technologies, Inc. Integrated intake manifold assembly for an internal combustion engine
US6510195B1 (en) * 2001-07-18 2003-01-21 Koninklijke Philips Electronics, N.V. Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same
US6613974B2 (en) 2001-12-21 2003-09-02 Micrel, Incorporated Tandem Si-Ge solar cell with improved conversion efficiency
US6667528B2 (en) 2002-01-03 2003-12-23 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6826080B2 (en) * 2002-05-24 2004-11-30 Nexflash Technologies, Inc. Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor
JP3840203B2 (ja) 2002-06-27 2006-11-01 キヤノン株式会社 固体撮像装置及び固体撮像装置を用いたカメラシステム
GB2392307B8 (en) * 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
CN101488507B (zh) 2002-08-09 2011-04-06 浜松光子学株式会社 光电二极管阵列、其制造方法和放射线检测器
US6853046B2 (en) 2002-09-24 2005-02-08 Hamamatsu Photonics, K.K. Photodiode array and method of making the same
US7038288B2 (en) 2002-09-25 2006-05-02 Microsemi Corporation Front side illuminated photodiode with backside bump
US7810740B2 (en) 2002-11-18 2010-10-12 Hamamatsu Photonics K.K. Back illuminated photodiode array, manufacturing method and semiconductor device thereof
FR2849537B1 (fr) 2002-12-27 2005-03-25 St Microelectronics Sa Commutateur bidirectionnel haute tension
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7256470B2 (en) 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7279731B1 (en) 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US8035183B2 (en) 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7576369B2 (en) 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US7656001B2 (en) 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
KR100532281B1 (ko) 2003-05-26 2005-11-29 삼성전자주식회사 면굴절 입사형 수광소자 및 그 제조방법
US6762473B1 (en) 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods
US7161155B1 (en) 2003-07-02 2007-01-09 Analogic Corporation X-ray detector with increased detective quantum efficiency
JP4499386B2 (ja) 2003-07-29 2010-07-07 浜松ホトニクス株式会社 裏面入射型光検出素子の製造方法
US7157785B2 (en) 2003-08-29 2007-01-02 Fuji Electric Device Technology Co., Ltd. Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices
US7138697B2 (en) 2004-02-24 2006-11-21 International Business Machines Corporation Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
KR100598038B1 (ko) 2004-02-25 2006-07-07 삼성전자주식회사 다층 반사 방지막을 포함하는 고체 촬상 소자 및 그 다층반사 방지막의 제조 방법
JP4443981B2 (ja) 2004-03-31 2010-03-31 浜松ホトニクス株式会社 半導体光検出素子及び光検出装置
JP4785433B2 (ja) * 2005-06-10 2011-10-05 キヤノン株式会社 固体撮像装置
US7242009B1 (en) 2005-06-22 2007-07-10 Hach Ultra Analytics, Inc. Methods and systems for signal processing in particle detection systems
US7560791B2 (en) 2005-10-28 2009-07-14 Icemos Technology Ltd. Front lit PIN/NIP diode having a continuous anode/cathode
KR101384247B1 (ko) 2006-04-28 2014-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환소자 및 광전변환소자의 제작 방법
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
FI121828B (fi) 2007-12-04 2011-04-29 Finphys Oy Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector

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CN102217082B (zh) 2013-12-04
US9035412B2 (en) 2015-05-19
CN102217082A (zh) 2011-10-12
GB2476019B (en) 2013-03-13
JP2012503314A (ja) 2012-02-02
EP2335288A2 (en) 2011-06-22
WO2010031011A2 (en) 2010-03-18
US20150014804A1 (en) 2015-01-15
GB2476019A8 (en) 2011-08-31
US20100065939A1 (en) 2010-03-18
GB201105287D0 (en) 2011-05-11
EP2335288A4 (en) 2013-07-17
MX2011002852A (es) 2011-08-17
GB2476019A (en) 2011-06-08
WO2010031011A3 (en) 2010-05-06
US8766392B2 (en) 2014-07-01

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