BRPI0919933A2 - processo e instalação para a produção de silício policristalino começando de silício metalúrgico. - Google Patents

processo e instalação para a produção de silício policristalino começando de silício metalúrgico.

Info

Publication number: BRPI0919933A2
Authority: BR; Brazil
Prior art keywords: installation; production; silicon; starting; metallurgical
Prior art date: 2008-10-20

Application number

BRPI0919933A

Other languages

English (en)

Inventor

Anatoli Vasilievich Pushko

Silvio Tozzoli

Original Assignee

Sunlit S R L

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-10-20

Filing date

2009-10-20

Publication date

2016-02-16

2009-10-20 Application filed by Sunlit S R L filed Critical Sunlit S R L

2016-02-16 Publication of BRPI0919933A2 publication Critical patent/BRPI0919933A2/pt

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
238000009434 installation Methods 0.000 title 1
238000000034 method Methods 0.000 title 1
229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10705—Tetrafluoride

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)

BRPI0919933A 2008-10-20 2009-10-20 processo e instalação para a produção de silício policristalino começando de silício metalúrgico. BRPI0919933A2 (pt)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
ITBO2008A000646A IT1391068B1 (it)	2008-10-20	2008-10-20	Metodo per la produzione di silicio policristallino
PCT/IB2009/007166 WO2010046751A2 (en)	2008-10-20	2009-10-20	Method for the production of polycrystalline silicon

Publications (1)

Publication Number	Publication Date
BRPI0919933A2 true BRPI0919933A2 (pt)	2016-02-16

Family

ID=42062274

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BRPI0919933A BRPI0919933A2 (pt)	2008-10-20	2009-10-20	processo e instalação para a produção de silício policristalino começando de silício metalúrgico.

Country Status (9)

Country	Link
US (1)	US20110229399A1 (pt)
EP (1)	EP2362852A2 (pt)
JP (1)	JP2012505825A (pt)
AU (1)	AU2009306070A1 (pt)
BR (1)	BRPI0919933A2 (pt)
CA (1)	CA2741023A1 (pt)
EA (1)	EA201100671A1 (pt)
IT (1)	IT1391068B1 (pt)
WO (1)	WO2010046751A2 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2010017231A1 (en)	2008-08-04	2010-02-11	Hariharan Alleppey V	Method to convert waste silicon to high purity silicon
CN103648980B (zh) *	2011-06-28	2017-10-13	Memc电子材料有限公司	在泡罩塔中制备硅烷的方法
RU2551511C1 (ru) *	2013-10-24	2015-05-27	Открытое акционерное общество "Ведущий научно-исследовательский институт химической технологии"	Способ получения моносилана и устройство для его осуществления
CN105776223B (zh) *	2014-12-16	2018-02-16	新特能源股份有限公司	三氯氢硅合成炉及系统、使用该合成炉或系统的排渣方法
CN105271238B (zh) *	2015-11-18	2017-10-20	浙江工业大学	一种利用机械化学法制备硅粉体的方法
CN114890428B (zh) *	2022-04-29	2023-05-09	成都理工大学	一种用于工业硅炉外精炼的三元造渣剂及其除杂方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4374111A (en) *	1980-11-21	1983-02-15	Allied Corporation	Production of silane
US4407783A (en) *	1982-08-16	1983-10-04	Allied Corporation	Producing silane from silicon tetrafluoride
DE3409172A1 (de) *	1984-03-13	1985-09-26	D. Swarovski & Co., Wattens, Tirol	Verfahren zur herstellung von silan
JPS62128915A (ja) *	1985-11-26	1987-06-11	Idemitsu Kosan Co Ltd	モノシランの製造方法
RU2077483C1 (ru) *	1995-04-28	1997-04-20	Всероссийский научно-исследовательский институт химической технологии	Способ получения моносилана
US5910295A (en) *	1997-11-10	1999-06-08	Memc Electronic Materials, Inc.	Closed loop process for producing polycrystalline silicon and fumed silica
JP4014451B2 (ja) *	2001-09-11	2007-11-28	セントラル硝子株式会社	四フッ化珪素の製造法
DE102004010055A1 (de) *	2004-03-02	2005-09-22	Degussa Ag	Verfahren zur Herstellung von Silicium
DE102005010700A1 (de) *	2005-03-09	2006-09-14	Studiengesellschaft Kohle Mbh	Verfahren zur Synthese von Verbindungen

2008
- 2008-10-20 IT ITBO2008A000646A patent/IT1391068B1/it active
2009
- 2009-10-20 US US12/998,409 patent/US20110229399A1/en not_active Abandoned
- 2009-10-20 AU AU2009306070A patent/AU2009306070A1/en not_active Abandoned
- 2009-10-20 WO PCT/IB2009/007166 patent/WO2010046751A2/en not_active Ceased
- 2009-10-20 CA CA2741023A patent/CA2741023A1/en not_active Abandoned
- 2009-10-20 JP JP2011532730A patent/JP2012505825A/ja active Pending
- 2009-10-20 EP EP09756564A patent/EP2362852A2/en not_active Withdrawn
- 2009-10-20 BR BRPI0919933A patent/BRPI0919933A2/pt not_active IP Right Cessation
- 2009-10-20 EA EA201100671A patent/EA201100671A1/ru unknown

Also Published As

Publication number	Publication date
WO2010046751A8 (en)	2010-08-05
US20110229399A1 (en)	2011-09-22
EA201100671A1 (ru)	2011-12-30
WO2010046751A3 (en)	2010-06-17
CA2741023A1 (en)	2010-04-29
IT1391068B1 (it)	2011-11-18
WO2010046751A2 (en)	2010-04-29
ITBO20080646A1 (it)	2010-04-21
EP2362852A2 (en)	2011-09-07
AU2009306070A1 (en)	2010-04-29
JP2012505825A (ja)	2012-03-08

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Legal Events

Date	Code	Title	Description
2016-09-13	B08F	Application fees: application dismissed [chapter 8.6 patent gazette]	Free format text: REFERENTE AS 4A, 5A, 6A E 7A ANUIDADES.
2017-01-10	B08K	Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]	Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.