BRPI0920930A2 - circuito de pixel, dispositivo de captura de imagem, e, sistema de câmera. - Google Patents

circuito de pixel, dispositivo de captura de imagem, e, sistema de câmera.

Info

Publication number
BRPI0920930A2
BRPI0920930A2 BRPI0920930A BRPI0920930A BRPI0920930A2 BR PI0920930 A2 BRPI0920930 A2 BR PI0920930A2 BR PI0920930 A BRPI0920930 A BR PI0920930A BR PI0920930 A BRPI0920930 A BR PI0920930A BR PI0920930 A2 BRPI0920930 A2 BR PI0920930A2
Authority
BR
Brazil
Prior art keywords
image capture
capture device
pixel circuit
camera system
camera
Prior art date
Application number
BRPI0920930A
Other languages
English (en)
Inventor
Tohsiyuki Nishihara
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of BRPI0920930A2 publication Critical patent/BRPI0920930A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
BRPI0920930A 2008-12-08 2009-11-25 circuito de pixel, dispositivo de captura de imagem, e, sistema de câmera. BRPI0920930A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008312413A JP5422985B2 (ja) 2008-12-08 2008-12-08 画素回路、固体撮像素子、およびカメラシステム
PCT/JP2009/069848 WO2010067705A1 (ja) 2008-12-08 2009-11-25 画素回路、固体撮像素子、およびカメラシステム

Publications (1)

Publication Number Publication Date
BRPI0920930A2 true BRPI0920930A2 (pt) 2015-12-29

Family

ID=42242695

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0920930A BRPI0920930A2 (pt) 2008-12-08 2009-11-25 circuito de pixel, dispositivo de captura de imagem, e, sistema de câmera.

Country Status (9)

Country Link
US (1) US8605184B2 (pt)
EP (1) EP2357797B1 (pt)
JP (1) JP5422985B2 (pt)
KR (1) KR101611646B1 (pt)
CN (1) CN102224730B (pt)
BR (1) BRPI0920930A2 (pt)
RU (1) RU2494565C2 (pt)
TW (1) TWI445400B (pt)
WO (1) WO2010067705A1 (pt)

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JP5258551B2 (ja) * 2008-12-26 2013-08-07 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5511541B2 (ja) * 2010-06-24 2014-06-04 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP5771079B2 (ja) * 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 撮像装置
JP5755111B2 (ja) * 2011-11-14 2015-07-29 キヤノン株式会社 撮像装置の駆動方法
JP5657516B2 (ja) * 2011-12-27 2015-01-21 本田技研工業株式会社 画素駆動装置及び画素駆動方法
CN102572323B (zh) * 2011-12-28 2014-12-10 中国科学院上海高等研究院 图像传感器像素电路
JP6327779B2 (ja) * 2012-02-29 2018-05-23 キヤノン株式会社 光電変換装置、焦点検出装置および撮像システム
JP6021360B2 (ja) * 2012-03-07 2016-11-09 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の駆動方法。
US8817154B2 (en) * 2012-08-30 2014-08-26 Omnivision Technologies, Inc. Image sensor with fixed potential output transistor
JP6021613B2 (ja) * 2012-11-29 2016-11-09 キヤノン株式会社 撮像素子、撮像装置、および、撮像システム
US9369648B2 (en) * 2013-06-18 2016-06-14 Alexander Krymski Image sensors, methods, and pixels with tri-level biased transfer gates
US10134788B2 (en) * 2013-09-17 2018-11-20 Omnivision Technologies, Inc. Dual VPIN HDR image sensor pixel
JP6354221B2 (ja) * 2014-03-12 2018-07-11 株式会社リコー 撮像装置及び電子機器
EP2924979B1 (en) * 2014-03-25 2023-01-18 IMEC vzw Improvements in or relating to imaging sensors
JP6541347B2 (ja) * 2014-03-27 2019-07-10 キヤノン株式会社 固体撮像装置および撮像システム
TWI643500B (zh) * 2014-03-31 2018-12-01 日商新力股份有限公司 攝像元件、攝像方法及電子機器
JP6548391B2 (ja) * 2014-03-31 2019-07-24 キヤノン株式会社 光電変換装置および撮像システム
WO2016017305A1 (ja) * 2014-07-31 2016-02-04 ソニー株式会社 画素回路、半導体光検出装置および放射線計数装置
US10205894B2 (en) * 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
US9521351B1 (en) 2015-09-21 2016-12-13 Rambus Inc. Fractional-readout oversampled image sensor
US10141356B2 (en) * 2015-10-15 2018-11-27 Semiconductor Components Industries, Llc Image sensor pixels having dual gate charge transferring transistors
JP6774224B2 (ja) * 2016-05-26 2020-10-21 キヤノン株式会社 固体撮像装置及び撮像システム
EP3861715B1 (en) 2018-10-27 2024-05-22 Huawei Technologies Co., Ltd. Sensor and display device

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JP4366846B2 (ja) * 2000-08-22 2009-11-18 日本ビクター株式会社 固体撮像装置
JP2002330345A (ja) * 2001-04-27 2002-11-15 Canon Inc 撮像装置
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US6888122B2 (en) * 2002-08-29 2005-05-03 Micron Technology, Inc. High dynamic range cascaded integration pixel cell and method of operation
JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
JP4418720B2 (ja) * 2003-11-21 2010-02-24 キヤノン株式会社 放射線撮像装置及び方法、並びに放射線撮像システム
US7332786B2 (en) * 2003-11-26 2008-02-19 Micron Technology, Inc. Anti-blooming storage pixel
US7443437B2 (en) * 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
JP2005229159A (ja) * 2004-02-10 2005-08-25 Matsushita Electric Ind Co Ltd 増幅型固体撮像装置とその駆動方法およびカメラ
JP4533367B2 (ja) * 2005-11-18 2010-09-01 キヤノン株式会社 固体撮像装置
JP4650249B2 (ja) * 2005-12-13 2011-03-16 船井電機株式会社 撮像装置
KR100776147B1 (ko) * 2006-05-04 2007-11-15 매그나칩 반도체 유한회사 운송 게이트를 전위 웰과 통합하여 확장된 화소의 동적범위를 갖는 이미지센서 센서
JP2008004692A (ja) * 2006-06-21 2008-01-10 Nikon Corp 固体撮像装置
JP4375364B2 (ja) * 2006-07-14 2009-12-02 ソニー株式会社 固体撮像装置の駆動方法
JP4847828B2 (ja) * 2006-09-22 2011-12-28 旭化成エレクトロニクス株式会社 Ｃｍｏｓイメージセンサの製造方法
JP4967801B2 (ja) * 2007-05-17 2012-07-04 ソニー株式会社 電源装置および電源装置の動作方法
WO2012088338A2 (en) * 2010-12-21 2012-06-28 Sionyx, Inc. Photodetecting imager devices having correlated double sampling and associated methods

Also Published As

Publication number Publication date
JP2010136281A (ja) 2010-06-17
KR101611646B1 (ko) 2016-04-11
EP2357797A4 (en) 2012-12-12
RU2494565C2 (ru) 2013-09-27
EP2357797A1 (en) 2011-08-17
KR20110093810A (ko) 2011-08-18
US8605184B2 (en) 2013-12-10
WO2010067705A1 (ja) 2010-06-17
RU2011121157A (ru) 2012-11-27
TW201027989A (en) 2010-07-16
CN102224730B (zh) 2014-06-25
CN102224730A (zh) 2011-10-19
US20110205416A1 (en) 2011-08-25
JP5422985B2 (ja) 2014-02-19
EP2357797B1 (en) 2018-01-24
TWI445400B (zh) 2014-07-11

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2386 DE 27-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.