BRPI0924261A2 - Reator de leito fluidizado para a produção de silício de alta pureza - Google Patents
Reator de leito fluidizado para a produção de silício de alta purezaInfo
- Publication number
- BRPI0924261A2 BRPI0924261A2 BRPI0924261-9A BRPI0924261A BRPI0924261A2 BR PI0924261 A2 BRPI0924261 A2 BR PI0924261A2 BR PI0924261 A BRPI0924261 A BR PI0924261A BR PI0924261 A2 BRPI0924261 A2 BR PI0924261A2
- Authority
- BR
- Brazil
- Prior art keywords
- high purity
- bed reactor
- fluid bed
- purity silicon
- silicon production
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000012530 fluid Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1818—Feeding of the fluidising gas
- B01J8/1827—Feeding of the fluidising gas the fluidising gas being a reactant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00433—Controlling the temperature using electromagnetic heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00433—Controlling the temperature using electromagnetic heating
- B01J2208/0046—Infrared radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0236—Metal based
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/393,852 US8168123B2 (en) | 2009-02-26 | 2009-02-26 | Fluidized bed reactor for production of high purity silicon |
| PCT/US2009/065345 WO2010098797A1 (en) | 2009-02-26 | 2009-11-20 | Fluidized bed reactor for production of high purity silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0924261A2 true BRPI0924261A2 (pt) | 2015-08-25 |
Family
ID=42631134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0924261-9A BRPI0924261A2 (pt) | 2009-02-26 | 2009-11-20 | Reator de leito fluidizado para a produção de silício de alta pureza |
Country Status (12)
| Country | Link |
|---|---|
| US (3) | US8168123B2 (pt) |
| EP (1) | EP2318313A4 (pt) |
| JP (1) | JP2012519130A (pt) |
| KR (1) | KR20110132338A (pt) |
| CN (1) | CN102239115A (pt) |
| AU (1) | AU2009341100A1 (pt) |
| BR (1) | BRPI0924261A2 (pt) |
| CA (1) | CA2753354A1 (pt) |
| MX (1) | MX2011008790A (pt) |
| RU (1) | RU2011139109A (pt) |
| TW (1) | TW201034757A (pt) |
| WO (1) | WO2010098797A1 (pt) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103058194B (zh) | 2008-09-16 | 2015-02-25 | 储晞 | 生产高纯颗粒硅的反应器 |
| JP2010171388A (ja) * | 2008-12-25 | 2010-08-05 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法及び基板処理用反応管 |
| US8168123B2 (en) | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
| US20100273010A1 (en) * | 2009-03-19 | 2010-10-28 | Robert Froehlich | Silicide-coated metal surfaces and methods of utilizing same |
| US8235305B2 (en) * | 2009-04-20 | 2012-08-07 | Ae Polysilicon Corporation | Methods and system for cooling a reaction effluent gas |
| CN102438763B (zh) * | 2009-04-20 | 2014-08-13 | 江苏中能硅业科技发展有限公司 | 具有包覆有硅化物的金属表面的反应器 |
| US8029756B1 (en) * | 2010-03-30 | 2011-10-04 | Peak Sun Sillcon Corporation | Closed-loop silicon production |
| CN101935038B (zh) * | 2010-08-13 | 2013-04-10 | 镇江环太硅科技有限公司 | 硅锭切割废料回收方法 |
| US20120148728A1 (en) * | 2010-12-09 | 2012-06-14 | Siliken Sa | Methods and apparatus for the production of high purity silicon |
| CN103492318A (zh) * | 2011-01-19 | 2014-01-01 | 瑞科硅公司 | 生产多晶硅的反应器系统和方法 |
| DE102011077970A1 (de) | 2011-06-22 | 2012-12-27 | Wacker Chemie Ag | Vorrichtung und Verfahren zur Temperaturbehandlung von korrosiven Gasen |
| US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
| EP2883613B1 (en) * | 2012-08-13 | 2020-09-09 | Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. | Method for preparing high sphericity seed crystal and fluidized bed particle silicon |
| US9452403B2 (en) * | 2012-10-19 | 2016-09-27 | Sunedison, Inc. | Using wavelet decomposition to determine the fluidization quality in a fluidized bed reactor |
| US9587993B2 (en) | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
| US9212421B2 (en) | 2013-07-10 | 2015-12-15 | Rec Silicon Inc | Method and apparatus to reduce contamination of particles in a fluidized bed reactor |
| TWI623420B (zh) * | 2012-11-06 | 2018-05-11 | 陝西有色天宏瑞科矽材料有限責任公司 | 降低流體化床反應器中顆粒污染的方法及裝置 |
| JP2016509662A (ja) * | 2012-12-21 | 2016-03-31 | アールイーシー シリコン インコーポレイテッド | 流動床反応器のための高温グレードの鋼 |
| US9297765B2 (en) * | 2013-03-14 | 2016-03-29 | Sunedison, Inc. | Gas decomposition reactor feedback control using Raman spectrometry |
| DE102013206339A1 (de) | 2013-04-10 | 2014-10-16 | Wacker Chemie Ag | Vorrichtung und Verfahren zum Ausbau von polykristallinen Siliciumstäben aus einem Reaktor |
| US20170021319A1 (en) * | 2014-03-10 | 2017-01-26 | Sitec Gmbh | Hydrochlorination reactor |
| US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
| US9238211B1 (en) | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
| US20160045881A1 (en) * | 2014-08-15 | 2016-02-18 | Rec Silicon Inc | High-purity silicon to form silicon carbide for use in a fluidized bed reactor |
| US9446367B2 (en) | 2014-08-15 | 2016-09-20 | Rec Silicon Inc | Joint design for segmented silicon carbide liner in a fluidized bed reactor |
| CN104383865B (zh) * | 2014-11-20 | 2016-09-21 | 江苏科技大学 | 一种磁流化床装置及使用该装置的控制方法和试验方法 |
| DE102015205727A1 (de) | 2015-03-30 | 2016-10-06 | Wacker Chemie Ag | Wirbelschichtreaktor zur Herstellung von Chlorsilanen |
| EP3310942B1 (en) | 2015-06-16 | 2022-07-13 | Versum Materials US, LLC | Processes for depositing silicon-containing films |
| WO2017062571A2 (en) * | 2015-10-09 | 2017-04-13 | Milwaukee Silicon, Llc | Purified silicon, devices and systems for producing same |
| EP3700860A4 (en) | 2017-10-27 | 2021-08-11 | Northern Silicon Inc. | SYSTEM AND PROCESS FOR MANUFACTURING HIGHLY PURE SILICON |
| EP4063324A4 (en) * | 2019-11-22 | 2024-10-30 | Tokuyama Corporation | Trichlorosilane production method, and pipes |
| RU2744449C1 (ru) * | 2019-12-27 | 2021-03-09 | Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) | Кремнийсодержащий активный материал для отрицательного электрода и способ его получения |
| KR20230074201A (ko) * | 2020-09-21 | 2023-05-26 | 디에스엠 아이피 어셋츠 비.브이. | 수소화 반응에서 금속성 전이 금속의 침착을 감소시키기 위한 금속 부품 상의 세라믹 코팅 |
| CN219424369U (zh) * | 2022-08-03 | 2023-07-28 | 江苏中能硅业科技发展有限公司 | 一种流化床 |
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| DE102004010055A1 (de) | 2004-03-02 | 2005-09-22 | Degussa Ag | Verfahren zur Herstellung von Silicium |
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-
2009
- 2009-02-26 US US12/393,852 patent/US8168123B2/en not_active Expired - Fee Related
- 2009-11-20 CA CA2753354A patent/CA2753354A1/en not_active Abandoned
- 2009-11-20 WO PCT/US2009/065345 patent/WO2010098797A1/en not_active Ceased
- 2009-11-20 CN CN2009801490221A patent/CN102239115A/zh active Pending
- 2009-11-20 RU RU2011139109/05A patent/RU2011139109A/ru unknown
- 2009-11-20 BR BRPI0924261-9A patent/BRPI0924261A2/pt not_active IP Right Cessation
- 2009-11-20 AU AU2009341100A patent/AU2009341100A1/en not_active Abandoned
- 2009-11-20 EP EP09840944.4A patent/EP2318313A4/en not_active Withdrawn
- 2009-11-20 MX MX2011008790A patent/MX2011008790A/es not_active Application Discontinuation
- 2009-11-20 JP JP2011552017A patent/JP2012519130A/ja active Pending
- 2009-11-20 KR KR1020117019738A patent/KR20110132338A/ko not_active Ceased
- 2009-11-24 TW TW098139951A patent/TW201034757A/zh unknown
-
2010
- 2010-10-13 US US12/903,994 patent/US8158093B2/en not_active Expired - Fee Related
-
2012
- 2012-03-14 US US13/420,074 patent/US20120171102A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US8168123B2 (en) | 2012-05-01 |
| EP2318313A4 (en) | 2013-05-01 |
| TW201034757A (en) | 2010-10-01 |
| US20110027160A1 (en) | 2011-02-03 |
| EP2318313A1 (en) | 2011-05-11 |
| AU2009341100A1 (en) | 2011-09-08 |
| RU2011139109A (ru) | 2013-11-20 |
| US20120171102A1 (en) | 2012-07-05 |
| WO2010098797A1 (en) | 2010-09-02 |
| US8158093B2 (en) | 2012-04-17 |
| KR20110132338A (ko) | 2011-12-07 |
| CA2753354A1 (en) | 2010-09-02 |
| JP2012519130A (ja) | 2012-08-23 |
| US20100215562A1 (en) | 2010-08-26 |
| CN102239115A (zh) | 2011-11-09 |
| MX2011008790A (es) | 2011-12-14 |
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