BRPI1008813A2 - múltiplos detectores de eneergização/desenergização de tensão de alimentação - Google Patents

múltiplos detectores de eneergização/desenergização de tensão de alimentação

Info

Publication number
BRPI1008813A2
BRPI1008813A2 BRPI1008813-0A BRPI1008813A BRPI1008813A2 BR PI1008813 A2 BRPI1008813 A2 BR PI1008813A2 BR PI1008813 A BRPI1008813 A BR PI1008813A BR PI1008813 A2 BRPI1008813 A2 BR PI1008813A2
Authority
BR
Brazil
Prior art keywords
multiple power
voltage detectors
detectors
voltage
power
Prior art date
Application number
BRPI1008813-0A
Other languages
English (en)
Inventor
Ki Kwon Cheng
Mohan Vivek
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=42331075&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=BRPI1008813(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BRPI1008813A2 publication Critical patent/BRPI1008813A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/24—Resetting means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Sources (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
BRPI1008813-0A 2009-02-04 2010-02-03 múltiplos detectores de eneergização/desenergização de tensão de alimentação BRPI1008813A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/365,559 2009-02-04
US12/365,559 US8063674B2 (en) 2009-02-04 2009-02-04 Multiple supply-voltage power-up/down detectors
PCT/US2010/023081 WO2010091105A2 (en) 2009-02-04 2010-02-03 Multiple supply-voltage power-up/down detectors

Publications (1)

Publication Number Publication Date
BRPI1008813A2 true BRPI1008813A2 (pt) 2018-02-06

Family

ID=42331075

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1008813-0A BRPI1008813A2 (pt) 2009-02-04 2010-02-03 múltiplos detectores de eneergização/desenergização de tensão de alimentação

Country Status (11)

Country Link
US (1) US8063674B2 (pt)
EP (2) EP3474450B1 (pt)
JP (1) JP5890181B2 (pt)
KR (1) KR101301285B1 (pt)
CN (2) CN102301596B (pt)
BR (1) BRPI1008813A2 (pt)
DK (1) DK2394364T3 (pt)
ES (1) ES2801977T3 (pt)
HU (1) HUE050824T2 (pt)
TW (1) TW201105035A (pt)
WO (1) WO2010091105A2 (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8570077B2 (en) 2010-12-17 2013-10-29 Qualcomm Incorporated Methods and implementation of low-power power-on control circuits
US8612789B2 (en) 2011-01-13 2013-12-17 Xilinx, Inc. Power management within an integrated circuit
US8667192B2 (en) * 2011-02-28 2014-03-04 Xilinx, Inc. Integrated circuit with programmable circuitry and an embedded processor system
DE102012203043A1 (de) * 2011-03-03 2012-09-06 Samsung Electronics Co., Ltd. System-auf-Chip, elektronisches Bauelement und System sowie Betriebsverfahren
US9000799B1 (en) * 2013-10-01 2015-04-07 Texas Instruments Incorporated Method to achieve true fail safe compliance and ultra low pin current during power-up sequencing for mobile interfaces
EP3397142B1 (en) 2015-12-30 2020-09-23 Dexcom, Inc. Transcutaneous analyte sensor systems
US10094859B1 (en) * 2017-07-19 2018-10-09 Invecas, Inc. Voltage detector
US11331022B2 (en) 2017-10-24 2022-05-17 Dexcom, Inc. Pre-connected analyte sensors
CN111246797B (zh) 2017-10-24 2025-09-09 德克斯康公司 预连接分析物传感器
US10514742B2 (en) * 2017-12-28 2019-12-24 Nxp B.V. Power down signal generating circuit
US10955864B2 (en) * 2018-03-06 2021-03-23 Arm Limited Context-aware power network
CN110248149B (zh) * 2018-10-19 2022-07-19 浙江大华技术股份有限公司 一种硬盘录像机dvr供电的方法及装置
EP3713089A1 (en) * 2019-03-22 2020-09-23 Nexperia B.V. Power supply detection circuit
EP3863179A1 (en) * 2020-02-06 2021-08-11 Nexperia B.V. Dual power supply detection circuit
JP6886545B1 (ja) * 2020-05-07 2021-06-16 ウィンボンド エレクトロニクス コーポレーション パワーダウン検出回路および半導体記憶装置
CN114449187B (zh) 2020-11-06 2023-10-17 广州印芯半导体技术有限公司 图像传感器以及图像感测方法
US11711076B2 (en) * 2021-04-30 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Power on control circuits and methods of operating the same
US11923840B1 (en) * 2022-11-11 2024-03-05 Nxp B.V. Power down signal generator
CN117878853A (zh) * 2023-11-29 2024-04-12 北京智芯微电子科技有限公司 基于通电控制的esd保护电路及芯片

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3602698A1 (de) * 1985-04-16 1986-10-16 SMS Schloemann-Siemag AG, 4000 Düsseldorf Walzgeruest mit axial verschiebbaren walzen
JPH01223820A (ja) * 1988-03-02 1989-09-06 Nec Corp パワーオン信号発生回路
US5130569A (en) * 1991-03-12 1992-07-14 Harris Corporation Power-on reset circuit
JP3169775B2 (ja) * 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
US5495453A (en) * 1994-10-19 1996-02-27 Intel Corporation Low power voltage detector circuit including a flash memory cell
US5723990A (en) * 1995-06-21 1998-03-03 Micron Quantum Devices, Inc. Integrated circuit having high voltage detection circuit
US5781051A (en) * 1996-07-26 1998-07-14 Exel Microelectronics, Inc. Power-up detector for low power systems
US6646844B1 (en) * 1999-12-15 2003-11-11 Motorola, Inc. Apparatus for power-on disable in a multiple power supply system and a method therefor
KR100343380B1 (ko) * 2000-10-19 2002-07-15 윤종용 전압 레벨 검출회로 및 이를 이용한 전압 발생회로
FR2822956B1 (fr) * 2001-04-02 2003-06-06 St Microelectronics Sa Dispositif de detection d'alimentation
US6900666B2 (en) * 2002-04-12 2005-05-31 University Of Rochester Dual threshold voltage and low swing domino logic circuits
KR100487526B1 (ko) * 2002-05-22 2005-05-03 삼성전자주식회사 반도체 장치
US7057907B2 (en) * 2003-11-21 2006-06-06 Fairchild Semiconductor Corporation Power converter having improved control
US7348814B2 (en) * 2004-08-24 2008-03-25 Macronix International Co., Ltd. Power-on reset circuit
KR100636933B1 (ko) * 2004-11-15 2006-10-19 주식회사 하이닉스반도체 파워 온 리셋 회로
CN101166982B (zh) * 2005-06-06 2012-03-28 半导体元件工业有限责任公司 低功率电压检测电路及其方法
JP2006352204A (ja) * 2005-06-13 2006-12-28 Seiko Epson Corp 電位検出回路及びそれを備える半導体集積回路
US7295052B2 (en) * 2005-08-03 2007-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Regenerative power-on control circuit
US7253655B2 (en) * 2005-09-01 2007-08-07 Micron Technology, Inc. Output driver robust to data dependent noise
JP2009526461A (ja) 2006-02-09 2009-07-16 エヌエックスピー ビー ヴィ 電圧供給源のパワーダウン状態を検出するための回路装置及び方法
KR100788356B1 (ko) * 2006-10-26 2008-01-02 동부일렉트로닉스 주식회사 전압차가 큰 레벨 변환이 가능한 단일 전원 레벨 변환기
JP2008219486A (ja) * 2007-03-05 2008-09-18 Freescale Semiconductor Inc パワーオン検知回路

Also Published As

Publication number Publication date
WO2010091105A3 (en) 2010-09-30
US20100194200A1 (en) 2010-08-05
CN102301596B (zh) 2017-07-28
EP2394364A2 (en) 2011-12-14
CN107491156A (zh) 2017-12-19
CN107491156B (zh) 2022-02-08
WO2010091105A2 (en) 2010-08-12
CN102301596A (zh) 2011-12-28
JP2012517193A (ja) 2012-07-26
EP2394364B1 (en) 2020-03-25
KR101301285B1 (ko) 2013-08-28
DK2394364T3 (da) 2020-05-18
US8063674B2 (en) 2011-11-22
EP3474450A1 (en) 2019-04-24
JP5890181B2 (ja) 2016-03-22
ES2801977T3 (es) 2021-01-15
HUE050824T2 (hu) 2021-01-28
KR20110132360A (ko) 2011-12-07
TW201105035A (en) 2011-02-01
EP3474450B1 (en) 2026-07-22

Similar Documents

Publication Publication Date Title
FIC20220003I1 (fi) Vosoritidi
AT507702A3 (de) Detektorfläche
EP2509489A4 (en) SPRINKLER FOR EARLY HEEL REMOVAL
DK2482768T3 (da) Intrauterint system
EP2419939A4 (en) INFRARED DETECTOR
DE112010000691A5 (de) Chromatographievorrichtung
HUE042614T2 (hu) Felnyílómozgató-rendszer
EP2446176A4 (en) CYLINDER SEAL
BR112012004964A2 (pt) girocóptero
BRPI1008070A2 (pt) tricianoboratos
EP3388800C0 (en) INFRARED THERMOMETER
DE112010004316A5 (de) Schraubvorrichtung
FR2947857B1 (fr) Agencement de deshuileur
EP2512583C0 (en) SHEATH
EP2475430A4 (en) GRANULATED ANTHELMINTIC PREPARATIONS AND OUTPUT SYSTEMS THEREFOR
EP2518828A4 (en) Rfid tag
DK2306032T3 (da) Fastgørelseselement
EP2485753A4 (en) VARIANTS OF THE CHAPERONINE IN POSITION 10
FI8691U1 (fi) Aukirullain
DE102009042692A8 (de) Infrarotdetektor
DK2251517T3 (da) Holdeelement
DE102009038881A8 (de) Geräteeinheit
FI8479U1 (fi) Elementti
ES1070908Y (es) Elemento de mobiliario
IT1396059B1 (it) Rilevatore.

Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]