BRPI1009211A2 - "sensor de imagem" - Google Patents

"sensor de imagem"

Info

Publication number
BRPI1009211A2
BRPI1009211A2 BRPI1009211A BRPI1009211A BRPI1009211A2 BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2 BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A BRPI1009211 A BR PI1009211A BR PI1009211 A2 BRPI1009211 A2 BR PI1009211A2
Authority
BR
Brazil
Prior art keywords
image sensor
sensor
image
Prior art date
Application number
BRPI1009211A
Other languages
English (en)
Inventor
Ossi Kalevo
Samu Koskinen
Tero Rissa
Original Assignee
Nokia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Corp filed Critical Nokia Corp
Publication of BRPI1009211A2 publication Critical patent/BRPI1009211A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0264—Electrical interface; User interface
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/02—Details
    • G01J3/0291—Housings; Spectrometer accessories; Spatial arrangement of elements, e.g. folded path arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2823—Imaging spectrometer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
    • G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
    • H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Human Computer Interaction (AREA)
  • Solid State Image Pick-Up Elements (AREA)
BRPI1009211A 2009-04-06 2010-02-04 "sensor de imagem" BRPI1009211A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/384,549 US8816460B2 (en) 2009-04-06 2009-04-06 Image sensor
PCT/FI2010/050065 WO2010116023A1 (en) 2009-04-06 2010-02-04 Image sensor

Publications (1)

Publication Number Publication Date
BRPI1009211A2 true BRPI1009211A2 (pt) 2016-03-15

Family

ID=42825405

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1009211A BRPI1009211A2 (pt) 2009-04-06 2010-02-04 "sensor de imagem"

Country Status (8)

Country Link
US (2) US8816460B2 (pt)
EP (1) EP2417632B1 (pt)
KR (1) KR101434014B1 (pt)
CN (1) CN102365742B (pt)
BR (1) BRPI1009211A2 (pt)
CA (2) CA2841508C (pt)
TW (1) TWI556418B (pt)
WO (1) WO2010116023A1 (pt)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8648287B1 (en) 2005-05-27 2014-02-11 Rambus Inc. Image sensor using single photon jots and processor to create pixels
US8134115B2 (en) * 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
JP5566093B2 (ja) * 2009-12-18 2014-08-06 キヤノン株式会社 固体撮像装置
US8420996B2 (en) * 2009-12-23 2013-04-16 Nokia Corporation Intensity estimation using binary sensor array with spatially varying thresholds
US8319855B2 (en) * 2010-01-19 2012-11-27 Rambus Inc. Method, apparatus and system for image acquisition and conversion
KR101565748B1 (ko) 2013-05-31 2015-11-05 삼성에스디에스 주식회사 이미지에서 반복 패턴을 검출하는 방법 및 장치
US9621864B2 (en) * 2014-01-14 2017-04-11 Microsoft Technology Licensing, Llc Spectral imaging system
US9752929B2 (en) * 2014-05-08 2017-09-05 Pinnacle Imaging Corporation Light-detecting device and method for converting optical radiation on switched conductivity diodes
US9865642B2 (en) 2015-06-05 2018-01-09 Omnivision Technologies, Inc. RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity
US9979907B2 (en) * 2015-09-18 2018-05-22 Sony Corporation Multi-layered high-dynamic range sensor
WO2018218063A1 (en) 2017-05-24 2018-11-29 The Trustees Of Columbia University In The City Of New York Broadband achromatic flat optical components by dispersion-engineered dielectric metasurfaces
JP7461294B2 (ja) 2017-08-31 2024-04-03 メタレンズ，インコーポレイテッド 透過型メタサーフェスレンズ統合
JP2021511553A (ja) 2018-01-24 2021-05-06 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ メタサーフェスを用いる偏光状態の生成方法
KR101961439B1 (ko) * 2018-06-14 2019-07-17 강용훈 센서 유닛 및 이를 포함하는 자외선 검출 장치
US12140778B2 (en) 2018-07-02 2024-11-12 Metalenz, Inc. Metasurfaces for laser speckle reduction
JP7242285B2 (ja) * 2018-12-19 2023-03-20 キオクシア株式会社 半導体装置
US11978752B2 (en) 2019-07-26 2024-05-07 Metalenz, Inc. Aperture-metasurface and hybrid refractive-metasurface imaging systems
US11578968B1 (en) 2019-10-31 2023-02-14 President And Fellows Of Harvard College Compact metalens depth sensors
CN112770020A (zh) * 2019-11-05 2021-05-07 北京小米移动软件有限公司 图像传感模组、方法、装置、电子设备及介质
EP4275080A4 (en) 2021-01-06 2024-11-13 Metalenz, Inc. SELF-ALIGNED NANOPILLAR COATINGS AND METHODS OF PREPARATION
WO2022251843A1 (en) 2021-05-25 2022-12-01 Metalenz, Inc. Single element dot pattern projector
US12680877B2 (en) 2021-07-23 2026-07-14 President And Fellows Of Harvard College Systems and methods of imaging polarimetry through metasurface polarization gratings
CN118591827A (zh) 2021-12-17 2024-09-03 梅特兰兹股份有限公司 通过照明和成像的抗欺骗面部识别
EP4500265A2 (en) 2022-03-31 2025-02-05 Metalenz, Inc. Polarization sorting metasurface microlens array device
US12699207B2 (en) 2022-10-05 2026-08-04 Metalenz, Inc. Shared-aperture camera system and calibration method

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4980252U (pt) * 1972-10-28 1974-07-11
US4011016A (en) * 1974-04-30 1977-03-08 Martin Marietta Corporation Semiconductor radiation wavelength detector
US6704049B1 (en) * 1998-02-23 2004-03-09 Micron Technology, Inc. Interpolator for a CMOS image sensor using a digital register
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
US6665012B1 (en) * 1998-09-22 2003-12-16 Pixim, Inc. Process-scalable high spatial resolution and low bit resolution CMOS area image sensor
US6252577B1 (en) * 1999-03-18 2001-06-26 Intel Corporation Efficient methodology for scaling and transferring images
US6727521B2 (en) * 2000-09-25 2004-04-27 Foveon, Inc. Vertical color filter detector group and array
US6731397B1 (en) * 1999-05-21 2004-05-04 Foveon, Inc. Method for storing and retrieving digital image data from an imaging array
US6888568B1 (en) * 1999-08-19 2005-05-03 Dialog Semiconductor Gmbh Method and apparatus for controlling pixel sensor elements
US6498576B1 (en) * 2000-05-09 2002-12-24 Pixim, Inc. Selective analog-to-digital conversion for a digital pixel sensor
DE60134950D1 (de) * 2001-02-08 2008-09-04 Sgs Thomson Microelectronics Referenzdatenkodierung für eine Festkörper-Bildaufnahmevorrichtung
US6960757B2 (en) * 2001-06-18 2005-11-01 Foveon, Inc. Simplified wiring schemes for vertical color filter pixel sensors
US6864557B2 (en) * 2001-06-18 2005-03-08 Foveon, Inc. Vertical color filter detector group and array
US7906826B2 (en) * 2002-02-05 2011-03-15 E-Phocus Many million pixel image sensor
US20040178463A1 (en) * 2002-03-20 2004-09-16 Foveon, Inc. Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group
US6841816B2 (en) * 2002-03-20 2005-01-11 Foveon, Inc. Vertical color filter sensor group with non-sensor filter and method for fabricating such a sensor group
US6704046B2 (en) * 2002-04-17 2004-03-09 Motorola, Inc. Digital pixel image sensor with independent color channel reference signals
US7129466B2 (en) * 2002-05-08 2006-10-31 Canon Kabushiki Kaisha Color image pickup device and color light-receiving device
US7408572B2 (en) * 2002-07-06 2008-08-05 Nova Research, Inc. Method and apparatus for an on-chip variable acuity imager array incorporating roll, pitch and yaw angle rates measurement
DE10233359A1 (de) 2002-07-23 2004-02-19 Daimlerchrysler Ag Druckguss-Zylinderkurbelgehäuse
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6646318B1 (en) * 2002-08-15 2003-11-11 National Semiconductor Corporation Bandgap tuned vertical color imager cell
US6891143B2 (en) * 2002-10-30 2005-05-10 Microsoft Corporation Photo-sensor array with pixel-level signal comparison
US7236191B2 (en) * 2003-04-30 2007-06-26 Nokia Corporation Method and system for image processing with pixel interpolation using second order gradients
US20040245592A1 (en) * 2003-05-01 2004-12-09 Yale University Solid state microchannel plate photodetector
US7858917B2 (en) 2003-05-02 2010-12-28 Massachusetts Institute Of Technology Digital photon-counting geiger-mode avalanche photodiode solid-state monolithic intensity imaging focal-plane with scalable readout circuitry
JP4365247B2 (ja) 2004-03-17 2009-11-18 富士フイルム株式会社 光電変換膜積層型固体撮像素子
JP2006027017A (ja) 2004-07-14 2006-02-02 Fuji Photo Film Co Ltd プリンタユニット
US7242027B2 (en) * 2004-08-13 2007-07-10 Paul Steven Schranz Light emitting and image sensing device and apparatus
EP1812968B1 (en) * 2004-08-25 2019-01-16 Callahan Cellular L.L.C. Apparatus for multiple camera devices and method of operating same
US20060124832A1 (en) * 2004-09-27 2006-06-15 Lightspin Technologies, Inc. Wide dynamic range photodetector
EP1667246A1 (en) 2004-12-03 2006-06-07 ETeCH AG A multi-colour sensitive device for colour image sensing
US7808023B2 (en) * 2005-08-24 2010-10-05 Aptina Imaging Corporation Method and apparatus providing integrated color pixel with buried sub-wavelength gratings in solid state imagers
US8119965B2 (en) * 2006-01-25 2012-02-21 Kyocera Corporation Image sensor having two light receiving elements and camera module having the image sensor
JP2008010773A (ja) * 2006-06-30 2008-01-17 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
US7612805B2 (en) * 2006-07-11 2009-11-03 Neal Solomon Digital imaging system and methods for selective image filtration
KR100875140B1 (ko) 2007-11-01 2008-12-22 실리콤텍(주) 기준전압이 자동으로 조절되는 저전력 이미지 센서 및 이이미지 센서가 포함되어 하나의 칩 상에 집적된 집적회로
WO2008060124A2 (en) * 2006-11-17 2008-05-22 Silicon Communications Technology Co., Ltd. Low power image sensor adjusting reference voltage automatically and optical pointing device comprising the same
US8761504B2 (en) 2006-11-29 2014-06-24 President And Fellows Of Harvard College Spatio-spectral sampling paradigm for imaging and a novel color filter array design
WO2008082569A1 (en) 2006-12-29 2008-07-10 Nanolambda, Inc. Wavelength selective metallic embossing nanostructure
CN102017147B (zh) 2007-04-18 2014-01-29 因维萨热技术公司 用于光电装置的材料、系统和方法
KR20090107254A (ko) * 2008-04-08 2009-10-13 삼성전자주식회사 이진 광신호를 이용한 이미지 센서 및 구동방법
WO2009136989A1 (en) 2008-05-09 2009-11-12 Ecole Polytechnique Federale De Lausanne Image sensor having nonlinear response
JP5055643B2 (ja) 2008-07-28 2012-10-24 株式会社リコー 撮像素子および画像撮像装置
US8179457B2 (en) * 2009-06-23 2012-05-15 Nokia Corporation Gradient color filters for sub-diffraction limit sensors
US8198578B2 (en) * 2009-06-23 2012-06-12 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors
US8134115B2 (en) * 2009-06-23 2012-03-13 Nokia Corporation Color filters for sub-diffraction limit-sized light sensors

Also Published As

Publication number Publication date
TW201119018A (en) 2011-06-01
KR20120009481A (ko) 2012-01-31
US9257475B2 (en) 2016-02-09
CA2757792A1 (en) 2010-10-14
CN102365742A (zh) 2012-02-29
US20100252716A1 (en) 2010-10-07
EP2417632B1 (en) 2019-01-09
CN102365742B (zh) 2014-07-16
CA2841508C (en) 2018-08-07
KR101434014B1 (ko) 2014-09-22
CA2841508A1 (en) 2010-10-14
CA2757792C (en) 2016-04-05
EP2417632A4 (en) 2016-07-06
TWI556418B (zh) 2016-11-01
WO2010116023A1 (en) 2010-10-14
US20140319324A1 (en) 2014-10-30
EP2417632A1 (en) 2012-02-15
US8816460B2 (en) 2014-08-26

Similar Documents

Publication Publication Date Title
EP2417632A4 (en) BLLDSENSOR
BR112012012872A2 (pt) "pirrolindinas de espiroindolinona"
EP2401701A4 (en) BROWSER FOR RECOGNIZING IMAGE OBJECTS
BRPI0924929A2 (pt) "unidade de transdutor"
BR112012004444A2 (pt) "laringoscópio"
EP2446808A4 (en) RECORDING UNIT
BRPI0907660A2 (pt) Sitema de sensor biomédico
BRPI0815935A2 (pt) sensor de posição
BRPI1012902A2 (pt) conjuntos de sensor de desenvolvimento
DK2264676T3 (da) Sensor
EP2506018A4 (en) ACCELEROMETER
BRPI0910229A2 (pt) Tetramatos de 4';4'-dioxaspiro espirociclicamente substituídos
DE112010003223A5 (de) Bildgebender lidarsensor
BRPI0819415A2 (pt) Sensor de posição
EP2190188A4 (en) BlLDSENSOR
GB0919421D0 (en) Beckside illuminated image sensor
DE102007045525A8 (de) Bildsensor
EP2508916A4 (en) Range sensor and range image sensor
EP2405734A4 (en) STICK ANGLE SENSOR
EP2334085A4 (en) IMAGING PROCESSOR
GB201200089D0 (en) Color-optimized image sensor
BRPI1012005A2 (pt) "detecção de defeitos"
EP2446611A4 (en) COMPILATION OF PICTURES
BRPI1009987A2 (pt) "dispositivo de vídeo"
EP2416135A4 (en) IR SENSOR ARRAY

Legal Events

Date Code Title Description
B25A Requested transfer of rights approved

Owner name: NOKIA TECHNOLOGIES OY (FI)

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]

Free format text: MANTIDO O INDEFERIMENTO UMA VEZ QUE NAO FOI APRESENTADO RECURSO DENTRO DO PRAZO LEGAL