BRPI1015955A2 - deposição de camada fina de silício aprimorada para aplicações em dispositivo fotovoltaico - Google Patents
deposição de camada fina de silício aprimorada para aplicações em dispositivo fotovoltaicoInfo
- Publication number
- BRPI1015955A2 BRPI1015955A2 BRPI1015955A BRPI1015955A BRPI1015955A2 BR PI1015955 A2 BRPI1015955 A2 BR PI1015955A2 BR PI1015955 A BRPI1015955 A BR PI1015955A BR PI1015955 A BRPI1015955 A BR PI1015955A BR PI1015955 A2 BRPI1015955 A2 BR PI1015955A2
- Authority
- BR
- Brazil
- Prior art keywords
- thin layer
- layer deposition
- photovoltaic device
- silicon thin
- device applications
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
- H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16734909P | 2009-04-07 | 2009-04-07 | |
| PCT/US2010/030199 WO2010118105A1 (en) | 2009-04-07 | 2010-04-07 | Improved silicon thin film deposition for photovoltaic device applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI1015955A2 true BRPI1015955A2 (pt) | 2016-04-26 |
Family
ID=42826523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI1015955A BRPI1015955A2 (pt) | 2009-04-07 | 2010-04-07 | deposição de camada fina de silício aprimorada para aplicações em dispositivo fotovoltaico |
Country Status (19)
| Country | Link |
|---|---|
| US (1) | US8273595B2 (pt) |
| EP (1) | EP2417633A4 (pt) |
| JP (1) | JP2012523703A (pt) |
| KR (1) | KR20120018146A (pt) |
| CN (1) | CN102422428A (pt) |
| AR (1) | AR076644A1 (pt) |
| AU (1) | AU2010234478A1 (pt) |
| BR (1) | BRPI1015955A2 (pt) |
| CA (1) | CA2758074A1 (pt) |
| CL (1) | CL2011002489A1 (pt) |
| EA (1) | EA201101460A1 (pt) |
| IL (1) | IL215547A0 (pt) |
| MA (1) | MA33252B1 (pt) |
| MX (1) | MX2011010562A (pt) |
| SG (1) | SG174479A1 (pt) |
| TN (1) | TN2011000479A1 (pt) |
| TW (1) | TW201041819A (pt) |
| WO (1) | WO2010118105A1 (pt) |
| ZA (1) | ZA201108120B (pt) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8148192B2 (en) * | 2010-02-22 | 2012-04-03 | James P Campbell | Transparent solar cell method of fabrication via float glass process |
| US8168467B2 (en) * | 2010-03-17 | 2012-05-01 | James P Campbell | Solar cell method of fabrication via float glass process |
| US8987583B2 (en) | 2012-12-01 | 2015-03-24 | Ann B Campbell | Variable optical density solar collector |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191974A (ja) | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | 耐熱性マルチジヤンクシヨン型半導体素子 |
| GB9400320D0 (en) * | 1994-01-10 | 1994-03-09 | Pilkington Glass Ltd | Coating on glass |
| US20040175500A1 (en) * | 2002-01-28 | 2004-09-09 | Akira Fujisawa | Method for forming transparent conductive film, transparent conductive film, glass substrate having the same and photoelectric transduction unit including the glass substrate |
| WO2004102677A1 (ja) * | 2003-05-13 | 2004-11-25 | Asahi Glass Company, Limited | 太陽電池用透明導電性基板およびその製造方法 |
| US7498058B2 (en) | 2004-12-20 | 2009-03-03 | Ppg Industries Ohio, Inc. | Substrates coated with a polycrystalline functional coating |
| US7743630B2 (en) * | 2005-05-05 | 2010-06-29 | Guardian Industries Corp. | Method of making float glass with transparent conductive oxide (TCO) film integrally formed on tin bath side of glass and corresponding product |
| US8648252B2 (en) | 2006-03-13 | 2014-02-11 | Guardian Industries Corp. | Solar cell using low iron high transmission glass and corresponding method |
-
2010
- 2010-04-07 BR BRPI1015955A patent/BRPI1015955A2/pt not_active IP Right Cessation
- 2010-04-07 KR KR1020117026406A patent/KR20120018146A/ko not_active Withdrawn
- 2010-04-07 EA EA201101460A patent/EA201101460A1/ru unknown
- 2010-04-07 US US12/755,712 patent/US8273595B2/en not_active Expired - Fee Related
- 2010-04-07 WO PCT/US2010/030199 patent/WO2010118105A1/en not_active Ceased
- 2010-04-07 CA CA2758074A patent/CA2758074A1/en not_active Abandoned
- 2010-04-07 AR ARP100101168A patent/AR076644A1/es not_active Application Discontinuation
- 2010-04-07 SG SG2011067840A patent/SG174479A1/en unknown
- 2010-04-07 TW TW099110855A patent/TW201041819A/zh unknown
- 2010-04-07 JP JP2012504810A patent/JP2012523703A/ja not_active Withdrawn
- 2010-04-07 MX MX2011010562A patent/MX2011010562A/es active IP Right Grant
- 2010-04-07 MA MA34320A patent/MA33252B1/fr unknown
- 2010-04-07 EP EP10762350A patent/EP2417633A4/en not_active Withdrawn
- 2010-04-07 AU AU2010234478A patent/AU2010234478A1/en not_active Abandoned
- 2010-04-07 CN CN2010800207149A patent/CN102422428A/zh active Pending
-
2011
- 2011-09-21 TN TN2011000479A patent/TN2011000479A1/fr unknown
- 2011-10-05 IL IL215547A patent/IL215547A0/en unknown
- 2011-10-06 CL CL2011002489A patent/CL2011002489A1/es unknown
- 2011-11-04 ZA ZA2011/08120A patent/ZA201108120B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012523703A (ja) | 2012-10-04 |
| AR076644A1 (es) | 2011-06-29 |
| ZA201108120B (en) | 2012-07-25 |
| EA201101460A1 (ru) | 2012-05-30 |
| MX2011010562A (es) | 2012-01-30 |
| TN2011000479A1 (en) | 2013-03-27 |
| CL2011002489A1 (es) | 2012-04-09 |
| US20100255627A1 (en) | 2010-10-07 |
| TW201041819A (en) | 2010-12-01 |
| KR20120018146A (ko) | 2012-02-29 |
| MA33252B1 (fr) | 2012-05-02 |
| WO2010118105A1 (en) | 2010-10-14 |
| CA2758074A1 (en) | 2010-10-14 |
| CN102422428A (zh) | 2012-04-18 |
| AU2010234478A1 (en) | 2011-11-24 |
| US8273595B2 (en) | 2012-09-25 |
| EP2417633A4 (en) | 2012-10-31 |
| SG174479A1 (en) | 2011-10-28 |
| IL215547A0 (en) | 2011-12-29 |
| EP2417633A1 (en) | 2012-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 5A E 6A ANUIDADES |
|
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2369 DE 31-05-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |