CA1014829A - Process and device for preparing a homogeneous alloy - Google Patents

Process and device for preparing a homogeneous alloy

Info

Publication number
CA1014829A
CA1014829A CA195,815A CA195815A CA1014829A CA 1014829 A CA1014829 A CA 1014829A CA 195815 A CA195815 A CA 195815A CA 1014829 A CA1014829 A CA 1014829A
Authority
CA
Canada
Prior art keywords
preparing
homogeneous alloy
homogeneous
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA195,815A
Other languages
English (en)
Inventor
Josef Jarosch
Josef Dietl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consortium fuer Elektrochemische Industrie GmbH
Original Assignee
Consortium fuer Elektrochemische Industrie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consortium fuer Elektrochemische Industrie GmbH filed Critical Consortium fuer Elektrochemische Industrie GmbH
Application granted granted Critical
Publication of CA1014829A publication Critical patent/CA1014829A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CA195,815A 1973-03-27 1974-03-25 Process and device for preparing a homogeneous alloy Expired CA1014829A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2315162A DE2315162C3 (de) 1973-03-27 1973-03-27 Verfahren und Vorrichtung zur Herstellung von homogenem Halbleitermaterial

Publications (1)

Publication Number Publication Date
CA1014829A true CA1014829A (en) 1977-08-02

Family

ID=5876040

Family Applications (1)

Application Number Title Priority Date Filing Date
CA195,815A Expired CA1014829A (en) 1973-03-27 1974-03-25 Process and device for preparing a homogeneous alloy

Country Status (6)

Country Link
JP (1) JPS49128803A (it)
CA (1) CA1014829A (it)
DE (1) DE2315162C3 (it)
FR (1) FR2223468B1 (it)
GB (1) GB1467975A (it)
IT (1) IT1003866B (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3322789C2 (de) * 1983-06-24 1985-12-05 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Herstellen von einkristallinem Hg↓1↓↓-↓↓x↓Cd↓x↓Te

Also Published As

Publication number Publication date
DE2315162B2 (de) 1978-06-08
JPS49128803A (it) 1974-12-10
FR2223468B1 (it) 1976-06-25
GB1467975A (en) 1977-03-23
FR2223468A1 (it) 1974-10-25
IT1003866B (it) 1976-06-10
DE2315162A1 (de) 1974-10-31
DE2315162C3 (de) 1979-02-01

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