CA1017073A - Structure d'un transistor a effet de champs a porte isolee complementaire et son procede de fabrication - Google Patents

Structure d'un transistor a effet de champs a porte isolee complementaire et son procede de fabrication

Info

Publication number
CA1017073A
CA1017073A CA226,321A CA226321A CA1017073A CA 1017073 A CA1017073 A CA 1017073A CA 226321 A CA226321 A CA 226321A CA 1017073 A CA1017073 A CA 1017073A
Authority
CA
Canada
Prior art keywords
fabricating
field effect
effect transistor
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA226,321A
Other languages
English (en)
Other versions
CA226321S (en
Inventor
Bruce E. Deal
Daniel C. Hu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of CA1017073A publication Critical patent/CA1017073A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0191—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H10W10/0127—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers using both n-type and p-type impurities, e.g. for isolation of complementary doped regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
CA226,321A 1974-06-03 1975-05-06 Structure d'un transistor a effet de champs a porte isolee complementaire et son procede de fabrication Expired CA1017073A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47535874A 1974-06-03 1974-06-03

Publications (1)

Publication Number Publication Date
CA1017073A true CA1017073A (fr) 1977-09-06

Family

ID=23887225

Family Applications (1)

Application Number Title Priority Date Filing Date
CA226,321A Expired CA1017073A (fr) 1974-06-03 1975-05-06 Structure d'un transistor a effet de champs a porte isolee complementaire et son procede de fabrication

Country Status (8)

Country Link
JP (1) JPS5619746B2 (fr)
CA (1) CA1017073A (fr)
DE (1) DE2523379C2 (fr)
FR (1) FR2275888A1 (fr)
GB (1) GB1499548A (fr)
HK (1) HK27981A (fr)
IT (1) IT1032951B (fr)
NL (1) NL185591C (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160466A (en) * 1974-11-22 1976-05-26 Hitachi Ltd Handotaisochino seizohoho
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
DE2945854A1 (de) * 1979-11-13 1981-05-21 Deutsche Itt Industries Gmbh, 7800 Freiburg Ionenimplantationsverfahren
US4345366A (en) * 1980-10-20 1982-08-24 Ncr Corporation Self-aligned all-n+ polysilicon CMOS process
JPS5955054A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体装置の製造方法
JPH0636425B2 (ja) * 1983-02-23 1994-05-11 テキサス インスツルメンツ インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
EP0123384A1 (fr) * 1983-02-25 1984-10-31 Western Digital Corporation Structure de circuit intégré complémentaire à effet de champ à portes isolées et procédé de fabrication d'une telle structure
JP2572653B2 (ja) * 1989-12-29 1997-01-16 セイコーエプソン株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1104070B (de) * 1959-01-27 1961-04-06 Siemens Ag Verfahren zur Herstellung einer eine eigenleitende oder nahezu eigenleitende Zone aufweisenden Halbleitertriode
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3648225A (en) * 1969-12-04 1972-03-07 Sperry Rand Corp Digital sonar doppler navigator
NL160988C (nl) * 1971-06-08 1979-12-17 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam, be- vattende ten minste een eerste veldeffecttransistor met geisoleerde stuurelektrode en werkwijze voor de vervaar- diging van de halfgeleiderinrichting.
JPS49123287A (fr) * 1973-03-28 1974-11-26

Also Published As

Publication number Publication date
FR2275888A1 (fr) 1976-01-16
JPS5619746B2 (fr) 1981-05-09
GB1499548A (en) 1978-02-01
NL7506288A (nl) 1975-12-05
HK27981A (en) 1981-07-03
FR2275888B1 (fr) 1981-08-21
NL185591C (nl) 1990-05-16
IT1032951B (it) 1979-06-20
JPS515969A (fr) 1976-01-19
DE2523379C2 (de) 1986-10-02
DE2523379A1 (de) 1975-12-11

Similar Documents

Publication Publication Date Title
CA1013866A (en) Process for fabricating insulated gate field effect transistor transistor structure
CA1024266A (fr) Transistors mosfet a rarefaction elevee
GB1556276A (en) Insulated gate field effect transistors
CA1001771A (en) Method of mos transistor manufacture and resulting structure
CA951796A (en) Counter using insulated gate field effect transistors
CA1028067A (fr) Transistor a effet de champ a porte de schottky
JPS5518100A (en) Insulated gate field effect transistor
CA994923A (en) Method for fabricating double-diffused, lateral transistors and the resulting structure
CA1030842A (fr) Clapet regulateur plan
CA1000872A (en) Method of manufacturing of junction field effect transistor
CA1009708A (en) Hysteresis circuits using insulated gate field effect transistors
JPS54147787A (en) Insulated gate field effect transistor
CA934072A (en) Lateral transistor structure and process for forming the same
CA1012658A (en) Manufacture of an insulated gate field effect transistor
AU499052B2 (en) Complementary transistor structure
HK27981A (en) Process for fabricating complementary insulated gate field efect transistor structure and the structure fabricated by the process
CA927012A (en) Bipolar-unipolar transistor structure
CA997870A (en) Semiconductor device and method of manufacturing the device
AU492209B2 (en) Deep depletion insulated gate field effect transistors
AU482826B2 (en) Method of mos transistor manufacture and resulting structure
AU486766B2 (en) Semiconductor device including an insulated gate field effect transistor
CA864144A (en) Field effect transistor and method for making same
CA874132A (en) Insulated gate field effect transistors
CA910497A (en) Field-effect transistor and method of making the same
CA868640A (en) Field effect transistor having passivated gate insulator