CA1020849A - Methode d'oxydation thermique du silicium avec addition de chlore - Google Patents
Methode d'oxydation thermique du silicium avec addition de chloreInfo
- Publication number
- CA1020849A CA1020849A CA194,529A CA194529A CA1020849A CA 1020849 A CA1020849 A CA 1020849A CA 194529 A CA194529 A CA 194529A CA 1020849 A CA1020849 A CA 1020849A
- Authority
- CA
- Canada
- Prior art keywords
- silicon
- thermal oxidation
- added chlorine
- chlorine
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2314746A DE2314746C2 (de) | 1973-03-24 | 1973-03-24 | Verfahren zum thermischen Oxydieren von Silicium unter Zusatz einer Chlorkohlenstoffverbindung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1020849A true CA1020849A (fr) | 1977-11-15 |
Family
ID=5875788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA194,529A Expired CA1020849A (fr) | 1973-03-24 | 1974-03-08 | Methode d'oxydation thermique du silicium avec addition de chlore |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5247305B2 (fr) |
| CA (1) | CA1020849A (fr) |
| DE (1) | DE2314746C2 (fr) |
| FR (1) | FR2222312B1 (fr) |
| GB (1) | GB1447184A (fr) |
| IT (1) | IT1003483B (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5051377A (en) * | 1988-09-01 | 1991-09-24 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
| US5268311A (en) * | 1988-09-01 | 1993-12-07 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5690528A (en) * | 1979-12-22 | 1981-07-22 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Surface treatment of semiconductor device |
-
1973
- 1973-03-24 DE DE2314746A patent/DE2314746C2/de not_active Expired
-
1974
- 1974-01-09 GB GB99574A patent/GB1447184A/en not_active Expired
- 1974-01-23 IT IT19667/74A patent/IT1003483B/it active
- 1974-02-13 FR FR7405840A patent/FR2222312B1/fr not_active Expired
- 1974-03-08 CA CA194,529A patent/CA1020849A/fr not_active Expired
- 1974-03-20 JP JP49031104A patent/JPS5247305B2/ja not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5051377A (en) * | 1988-09-01 | 1991-09-24 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
| US5139869A (en) * | 1988-09-01 | 1992-08-18 | Wolfgang Euen | Thin dielectric layer on a substrate |
| US5268311A (en) * | 1988-09-01 | 1993-12-07 | International Business Machines Corporation | Method for forming a thin dielectric layer on a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5010081A (fr) | 1975-02-01 |
| FR2222312B1 (fr) | 1976-12-03 |
| JPS5247305B2 (fr) | 1977-12-01 |
| DE2314746A1 (de) | 1974-09-26 |
| GB1447184A (en) | 1976-08-25 |
| IT1003483B (it) | 1976-06-10 |
| FR2222312A1 (fr) | 1974-10-18 |
| DE2314746C2 (de) | 1983-11-17 |
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