CA1023833A - Detecteur de radiations optiques et methode de fabrication - Google Patents

Detecteur de radiations optiques et methode de fabrication

Info

Publication number
CA1023833A
CA1023833A CA220,007A CA220007A CA1023833A CA 1023833 A CA1023833 A CA 1023833A CA 220007 A CA220007 A CA 220007A CA 1023833 A CA1023833 A CA 1023833A
Authority
CA
Canada
Prior art keywords
making
same
radiation detector
optical radiation
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA220,007A
Other languages
English (en)
Other versions
CA220007S (en
Inventor
Henry Kressel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1023833A publication Critical patent/CA1023833A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
CA220,007A 1974-03-01 1975-02-13 Detecteur de radiations optiques et methode de fabrication Expired CA1023833A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44722274A 1974-03-01 1974-03-01

Publications (1)

Publication Number Publication Date
CA1023833A true CA1023833A (fr) 1978-01-03

Family

ID=23775470

Family Applications (1)

Application Number Title Priority Date Filing Date
CA220,007A Expired CA1023833A (fr) 1974-03-01 1975-02-13 Detecteur de radiations optiques et methode de fabrication

Country Status (5)

Country Link
JP (1) JPS50120789A (fr)
CA (1) CA1023833A (fr)
DE (1) DE2507232A1 (fr)
FR (1) FR2262865B1 (fr)
GB (1) GB1490799A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
JPH07105519B2 (ja) * 1989-10-03 1995-11-13 シャープ株式会社 太陽電池セル

Also Published As

Publication number Publication date
GB1490799A (en) 1977-11-02
AU7847175A (en) 1976-08-26
FR2262865B1 (fr) 1978-09-29
FR2262865A1 (fr) 1975-09-26
JPS50120789A (fr) 1975-09-22
DE2507232A1 (de) 1975-09-11

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