CA1030263A - Single bipolar transistor memory cell and method - Google Patents

Single bipolar transistor memory cell and method

Info

Publication number
CA1030263A
CA1030263A CA198,905A CA198905A CA1030263A CA 1030263 A CA1030263 A CA 1030263A CA 198905 A CA198905 A CA 198905A CA 1030263 A CA1030263 A CA 1030263A
Authority
CA
Canada
Prior art keywords
memory cell
bipolar transistor
transistor memory
single bipolar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA198,905A
Other languages
English (en)
French (fr)
Other versions
CA198905S (en
Inventor
James A. Marley (Jr.)
Bohumil Polata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of CA1030263A publication Critical patent/CA1030263A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
CA198,905A 1973-05-21 1974-05-03 Single bipolar transistor memory cell and method Expired CA1030263A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36249573A 1973-05-21 1973-05-21

Publications (1)

Publication Number Publication Date
CA1030263A true CA1030263A (en) 1978-04-25

Family

ID=23426344

Family Applications (1)

Application Number Title Priority Date Filing Date
CA198,905A Expired CA1030263A (en) 1973-05-21 1974-05-03 Single bipolar transistor memory cell and method

Country Status (7)

Country Link
JP (1) JPS5021684A (cs)
CA (1) CA1030263A (cs)
DE (1) DE2424607A1 (cs)
FR (1) FR2231074A1 (cs)
GB (1) GB1446386A (cs)
IT (1) IT1012682B (cs)
NL (1) NL7406749A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210904A (en) * 1976-05-26 1977-01-27 Nippon Kokuen Kogyo Kk Plunger
JPS53111406U (cs) * 1977-02-14 1978-09-06
JPS5424627A (en) * 1977-07-27 1979-02-24 Mitsubishi Gas Chemical Co Removinggagent for phtoresist
GB2095901B (en) * 1977-10-13 1983-02-23 Mohsen Amr Mohamed An mos transistor
JPS55130079U (cs) * 1979-03-09 1980-09-13

Also Published As

Publication number Publication date
DE2424607A1 (de) 1974-12-12
JPS5021684A (cs) 1975-03-07
IT1012682B (it) 1977-03-10
NL7406749A (cs) 1974-11-25
FR2231074A1 (cs) 1974-12-20
GB1446386A (en) 1976-08-18

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