CA1037129A - Methode et appareil de gravure par plasma - Google Patents

Methode et appareil de gravure par plasma

Info

Publication number
CA1037129A
CA1037129A CA242,973A CA242973A CA1037129A CA 1037129 A CA1037129 A CA 1037129A CA 242973 A CA242973 A CA 242973A CA 1037129 A CA1037129 A CA 1037129A
Authority
CA
Canada
Prior art keywords
temperature
reaction chamber
gas
plasma
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA242,973A
Other languages
English (en)
Inventor
Robert G. Poulsen
Original Assignee
Northern Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Electric Co Ltd filed Critical Northern Electric Co Ltd
Priority to CA242,973A priority Critical patent/CA1037129A/fr
Application granted granted Critical
Publication of CA1037129A publication Critical patent/CA1037129A/fr
Expired legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00Welding or cutting by means of a plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
CA242,973A 1976-01-05 1976-01-05 Methode et appareil de gravure par plasma Expired CA1037129A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA242,973A CA1037129A (fr) 1976-01-05 1976-01-05 Methode et appareil de gravure par plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA242,973A CA1037129A (fr) 1976-01-05 1976-01-05 Methode et appareil de gravure par plasma

Publications (1)

Publication Number Publication Date
CA1037129A true CA1037129A (fr) 1978-08-22

Family

ID=4104899

Family Applications (1)

Application Number Title Priority Date Filing Date
CA242,973A Expired CA1037129A (fr) 1976-01-05 1976-01-05 Methode et appareil de gravure par plasma

Country Status (1)

Country Link
CA (1) CA1037129A (fr)

Similar Documents

Publication Publication Date Title
US4115184A (en) Method of plasma etching
KR19990029782A (ko) 가스 온도 측정을 이용한 반도체 웨이퍼 온도 측정 및 제어 장치와 그 방법
EP0308516B1 (fr) Procede permettant de determiner le point terminal de nettoyage dans une installation de production de dispositifs a semi-conducteurs
KR940010643B1 (ko) 반도체 웨이퍼의 처리방법 및 장치
US5169407A (en) Method of determining end of cleaning of semiconductor manufacturing apparatus
US6507007B2 (en) System of controlling the temperature of a processing chamber
KR20240049234A (ko) 반도체 공정 챔버를 열적으로 검교정하기 위한 시스템 및 방법
US4936967A (en) Method of detecting an end point of plasma treatment
US4528438A (en) End point control in plasma etching
KR100402299B1 (ko) 기판웨이퍼처리장치및이장치의작동방법
US6976782B1 (en) Methods and apparatus for in situ substrate temperature monitoring
CA1071579A (fr) Regulation du point final en gravure au plasma
CA1037129A (fr) Methode et appareil de gravure par plasma
JP2005518095A (ja) 半導体処理システムを較正および使用する方法
JPH02298829A (ja) 熱処理装置
JPS6358913B2 (fr)
US20020142497A1 (en) Method of manufacturing a semiconductor device
JPH04297054A (ja) 半導体ウエハーの処理方法および装置
JPH04359125A (ja) 温度測定装置とこれを用いた被加熱体の温度測定装置
Eisele The true surface temperature of a silicon wafer and the related etch rate in a CF4 plasma
EP0452777A2 (fr) Système de chauffe et de surveillance d'une plaquette et méthode d'utilisation
JPS5934136Y2 (ja) 半導体製造装置
JPH0192384A (ja) プラズマ処理装置
JP3429104B2 (ja) プラズマ低温エッチング装置
US5916411A (en) Dry etching system