CA1038080A - Coupleur de charge a canal enseveli et porte de recouvrement - Google Patents

Info

Publication number

CA1038080A

CA1038080A CA233,764A CA233764A CA1038080A CA 1038080 A CA1038080 A CA 1038080A CA 233764 A CA233764 A CA 233764A CA 1038080 A CA1038080 A CA 1038080A

Authority

CA

Canada

Prior art keywords

buried channel

regions

gate electrodes

gate

channel

Prior art date

1974-08-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• CIPO
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• 238000003860 storage Methods 0.000 claims abstract description 15
• 239000012535 impurity Substances 0.000 claims abstract description 14
• 239000003990 capacitor Substances 0.000 claims abstract description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
• 239000000758 substrate Substances 0.000 claims description 14
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
• 239000012212 insulator Substances 0.000 claims description 7
• 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
• 239000002800 charge carrier Substances 0.000 claims description 3
• 239000004065 semiconductor Substances 0.000 claims description 3
• 230000007423 decrease Effects 0.000 claims description 2
• 239000007943 implant Substances 0.000 abstract description 9
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
• 229920005591 polysilicon Polymers 0.000 description 27
• 229910052751 metal Inorganic materials 0.000 description 17
• 239000002184 metal Substances 0.000 description 17
• 229910052782 aluminium Inorganic materials 0.000 description 15
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
• 150000002500 ions Chemical class 0.000 description 13
• 229910052796 boron Inorganic materials 0.000 description 11
• 238000012546 transfer Methods 0.000 description 10
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
• 239000010703 silicon Substances 0.000 description 7
• 239000000377 silicon dioxide Substances 0.000 description 7
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
• -1 boron ions Chemical class 0.000 description 6
• 229910052710 silicon Inorganic materials 0.000 description 6
• 235000012239 silicon dioxide Nutrition 0.000 description 6
• 230000015556 catabolic process Effects 0.000 description 5
• 238000009792 diffusion process Methods 0.000 description 5
• BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
• 238000002513 implantation Methods 0.000 description 5
• 238000005468 ion implantation Methods 0.000 description 5
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• QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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• 238000000059 patterning Methods 0.000 description 2
• 238000010587 phase diagram Methods 0.000 description 2
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
• WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
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