CA1050862A - Magnetic bubble devices and garnet films therefor - Google Patents

Magnetic bubble devices and garnet films therefor

Info

Publication number: CA1050862A
Authority: CA; Canada
Prior art keywords: garnet; film; bubble; gallium; magnetic
Prior art date: 1973-10-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA210,109A

Other languages

English (en)

French (fr)

Inventor

Richard E. Novak

Aline Akselrad

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-10-04

Filing date

1974-09-26

Publication date

1979-03-20

1974-09-26 Application filed by RCA Corp filed Critical RCA Corp

1979-03-20 Application granted granted Critical

1979-03-20 Publication of CA1050862A publication Critical patent/CA1050862A/en

Status Expired legal-status Critical Current

Links

239000002223 garnet Substances 0.000 title claims abstract description 32
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 12
229910052733 gallium Chemical group 0.000 claims abstract description 12
229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
-1 rare earth ions Chemical class 0.000 claims abstract description 5
229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
239000013078 crystal Substances 0.000 claims description 14
229910052775 Thulium Inorganic materials 0.000 claims description 6
150000002500 ions Chemical class 0.000 claims description 6
OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 5
229910052727 yttrium Inorganic materials 0.000 claims description 5
VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
229910052769 Ytterbium Inorganic materials 0.000 claims description 4
NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 4
229910052691 Erbium Inorganic materials 0.000 claims description 2
229910052693 Europium Inorganic materials 0.000 claims description 2
UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
239000000696 magnetic material Substances 0.000 claims description 2
230000001902 propagating effect Effects 0.000 claims description 2
230000010287 polarization Effects 0.000 claims 1
239000000758 substrate Substances 0.000 abstract description 12
229910052797 bismuth Inorganic materials 0.000 abstract description 8
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 6
ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 abstract description 5
239000000203 mixture Substances 0.000 description 12
239000000463 material Substances 0.000 description 10
230000004907 flux Effects 0.000 description 8
238000000034 method Methods 0.000 description 7
UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 5
230000005415 magnetization Effects 0.000 description 5
230000003287 optical effect Effects 0.000 description 5
238000001514 detection method Methods 0.000 description 4
JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
229910000464 lead oxide Inorganic materials 0.000 description 3
239000007791 liquid phase Substances 0.000 description 3
YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 3
229910052688 Gadolinium Inorganic materials 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229910000416 bismuth oxide Inorganic materials 0.000 description 2
239000000470 constituent Substances 0.000 description 2
TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
229910052742 iron Inorganic materials 0.000 description 2
238000002844 melting Methods 0.000 description 2
230000008018 melting Effects 0.000 description 2
229910052697 platinum Inorganic materials 0.000 description 2
230000000644 propagated effect Effects 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000010703 silicon Substances 0.000 description 2
ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 2
OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
238000007792 addition Methods 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910052791 calcium Inorganic materials 0.000 description 1
239000011575 calcium Substances 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000007547 defect Effects 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000010365 information processing Effects 0.000 description 1
UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000000155 melt Substances 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
238000010587 phase diagram Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
150000002910 rare earth metals Chemical class 0.000 description 1
238000005204 segregation Methods 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
239000007787 solid Substances 0.000 description 1
229910052720 vanadium Inorganic materials 0.000 description 1
LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0866—Detecting magnetic domains

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Power Engineering (AREA)
Inorganic Chemistry (AREA)
Thin Magnetic Films (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

CA210,109A 1973-10-04 1974-09-26 Magnetic bubble devices and garnet films therefor Expired CA1050862A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US40339373A	1973-10-04	1973-10-04

Publications (1)

Publication Number	Publication Date
CA1050862A true CA1050862A (en)	1979-03-20

Family

ID=23595605

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA210,109A Expired CA1050862A (en)	1973-10-04	1974-09-26	Magnetic bubble devices and garnet films therefor

Country Status (5)

Country	Link
JP (1)	JPS5427958B2 (ja)
CA (1)	CA1050862A (ja)
DE (1)	DE2447509A1 (ja)
FR (1)	FR2246937A1 (ja)
GB (1)	GB1441353A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2600959C2 (de) *	1976-01-13	1984-06-28	Philips Patentverwaltung Gmbh, 2000 Hamburg	Ferrimagnetische Granatschicht für magnetooptische Speicher und deren Herstellung
JPS5459915A (en) *	1977-10-20	1979-05-15	Sony Corp	Method and apparatus for reading of magnetic recording signal
JPS56155515A (en)	1980-05-01	1981-12-01	Olympus Optical Co Ltd	Magnetic garnet film and manufacture
DE3174704D1 (en) *	1980-07-11	1986-07-03	Philips Nv	Device for propagating magnetic domains
US4433034A (en) *	1982-04-12	1984-02-21	Allied Corporation	Magnetic bubble layer of thulium-containing garnet
JPS5981570A (ja) *	1982-11-01	1984-05-11	Hitachi Ltd	光方式磁界測定装置
US4520460A (en) *	1983-08-15	1985-05-28	Allied Corporation	Temperature stable magnetic bubble compositions
FR2572844B1 (fr) *	1984-11-02	1986-12-26	Commissariat Energie Atomique	Materiau magnetique du type grenat, film magnetique a forte rotation faraday comportant un tel materiau et son procede de fabrication
JP2001348297A (ja)	2000-06-06	2001-12-18	Tokin Corp	ビスマス置換型ガーネット厚膜材料及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5020300A (ja) *	1973-06-27	1975-03-04

1974
- 1974-09-26 GB GB4190574A patent/GB1441353A/en not_active Expired
- 1974-09-26 CA CA210,109A patent/CA1050862A/en not_active Expired
- 1974-10-02 JP JP11425974A patent/JPS5427958B2/ja not_active Expired
- 1974-10-02 FR FR7433179A patent/FR2246937A1/fr not_active Withdrawn
- 1974-10-04 DE DE19742447509 patent/DE2447509A1/de not_active Withdrawn

Also Published As

Publication number	Publication date
JPS5427958B2 (ja)	1979-09-13
DE2447509A1 (de)	1975-04-17
GB1441353A (en)	1976-06-30
JPS5064797A (ja)	1975-06-02
FR2246937A1 (ja)	1975-05-02

Publication	Publication Date	Title
Robertson et al.	1973	Preparation and optical properties of single crystal thin films of bismuth substituted iron garnets for magneto-optic applications
US5245689A (en)	1993-09-14	Magneto-optical waveguides of aluminum garnet
Scott et al.	2003	Magnetooptic properties and applications of bismuth substituted iron garnets
US4018692A (en)	1977-04-19	Composition for making garnet films for improved magnetic bubble devices
EP0208476B1 (en)	1993-01-20	Magnetic field sensor having magneto-optic element
CA1050862A (en)	1979-03-20	Magnetic bubble devices and garnet films therefor
US4698820A (en)	1987-10-06	Magnetic device and method of manufacture
US5535046A (en)	1996-07-09	Faraday rotator
US5608570A (en)	1997-03-04	Article comprising a magneto-optic material having low magnetic moment
EP0811851A2 (en)	1997-12-10	Faraday rotator having a rectangular shaped hysteresis
JPH09185027A (ja)	1997-07-15	低磁気モーメントを有する磁気光学材からなる製品
JP3458865B2 (ja)	2003-10-20	低飽和磁界ビスマス置換希土類鉄ガーネット単結晶、および、その用途
US4698281A (en)	1987-10-06	Garnet-type magnetic material high faraday rotation magnetic film containing such a material and process for the production thereof
Porter et al.	1958	Transparent ferromagnetic light modulator using yttrium iron garnet
Nielsen	1971	Properties and preparation of magnetic materials for bubble domains
Clover et al.	1971	Low birefringent orthoferrites for optical devices
EP0785454A1 (en)	1997-07-23	Faraday rotator for magneto-optic sensors
RU2138069C1 (ru)	1999-09-20	Магнитооптическая тонкопленочная структура
JP4468045B2 (ja)	2010-05-26	磁気情報の読取・評価方法及び装置
JPWO2004049039A1 (ja)	2006-03-23	ファラデー回転子、及びこれを用いた磁気光学デバイス
US3637289A (en)	1972-01-25	Devices based on induced dichroism
JP4464177B2 (ja)	2010-05-19	磁気光学媒体とその製造方法
US3609008A (en)	1971-09-28	Thallium iron fluoride and devices utilizing same
JPH0769797A (ja)	1995-03-14	低飽和磁界ビスマス置換鉄ガーネット単結晶
Gowland	1977	Magnetic Bubble Memories