CA1059599A - Luminescent diode - Google Patents

Luminescent diode

Info

Publication number: CA1059599A
Authority: CA; Canada
Prior art keywords: layer; semiconductor body; semiconductor; insulating layer; luminescent diode
Prior art date: 1975-02-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA245,007A

Other languages

English (en)

French (fr)

Inventor

Gunter Winstel

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee

Siemens AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-02-05

Filing date

1976-02-04

Publication date

1979-07-31

1976-02-04 Application filed by Siemens AG filed Critical Siemens AG

1979-07-31 Application granted granted Critical

1979-07-31 Publication of CA1059599A publication Critical patent/CA1059599A/en

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims abstract description 76
239000013078 crystal Substances 0.000 claims abstract description 18
239000002800 charge carrier Substances 0.000 claims abstract description 10
230000006798 recombination Effects 0.000 claims abstract description 7
238000005215 recombination Methods 0.000 claims abstract description 7
239000011810 insulating material Substances 0.000 claims description 10
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
239000004020 conductor Substances 0.000 claims description 4
238000010276 construction Methods 0.000 description 6
239000000463 material Substances 0.000 description 6
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
229910005540 GaP Inorganic materials 0.000 description 3
238000000407 epitaxy Methods 0.000 description 3
239000012212 insulator Substances 0.000 description 2
238000000034 method Methods 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
238000002513 implantation Methods 0.000 description 1
229910003437 indium oxide Inorganic materials 0.000 description 1
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000007787 solid Substances 0.000 description 1
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
229910001887 tin oxide Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/052—Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/833—Transparent materials

Landscapes

Led Devices (AREA)

CA245,007A 1975-02-05 1976-02-04 Luminescent diode Expired CA1059599A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2504775A DE2504775C3 (de)	1975-02-05	1975-02-05	Lumineszenzdiode

Publications (1)

Publication Number	Publication Date
CA1059599A true CA1059599A (en)	1979-07-31

Family

ID=5938140

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA245,007A Expired CA1059599A (en)	1975-02-05	1976-02-04	Luminescent diode

Country Status (5)

Country	Link
JP (1)	JPS51132090A (de)
CA (1)	CA1059599A (de)
DE (1)	DE2504775C3 (de)
FR (1)	FR2300420A1 (de)
GB (1)	GB1541505A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6483629B2 (ja) *	2016-01-05	2019-03-13	日本電信電話株式会社	電磁波発生装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3849707A (en) *	1973-03-07	1974-11-19	Ibm	PLANAR GaN ELECTROLUMINESCENT DEVICE
US3819974A (en) *	1973-03-12	1974-06-25	D Stevenson	Gallium nitride metal-semiconductor junction light emitting diode

1975
- 1975-02-05 DE DE2504775A patent/DE2504775C3/de not_active Expired
1976
- 1976-01-28 GB GB3240/76A patent/GB1541505A/en not_active Expired
- 1976-02-03 FR FR7602917A patent/FR2300420A1/fr active Granted
- 1976-02-04 CA CA245,007A patent/CA1059599A/en not_active Expired
- 1976-02-04 JP JP1120776A patent/JPS51132090A/ja active Pending

Also Published As

Publication number	Publication date
GB1541505A (en)	1979-03-07
JPS51132090A (en)	1976-11-16
DE2504775A1 (de)	1976-08-19
FR2300420A1 (fr)	1976-09-03
DE2504775B2 (de)	1980-08-07
DE2504775C3 (de)	1981-03-26
FR2300420B1 (de)	1978-11-10

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