CA1060762A - Methode et appareillage pour la culture de cristaux de hg12 - Google Patents

Methode et appareillage pour la culture de cristaux de hg12

Info

Publication number
CA1060762A
CA1060762A CA254,044A CA254044A CA1060762A CA 1060762 A CA1060762 A CA 1060762A CA 254044 A CA254044 A CA 254044A CA 1060762 A CA1060762 A CA 1060762A
Authority
CA
Canada
Prior art keywords
temperature
furnace
ampoule
crystals
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA254,044A
Other languages
English (en)
Inventor
Wayne F. Schnepple
Michael M. Schieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United States Department of Energy
Original Assignee
United States Department of Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United States Department of Energy filed Critical United States Department of Energy
Application granted granted Critical
Publication of CA1060762A publication Critical patent/CA1060762A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA254,044A 1975-07-01 1976-06-04 Methode et appareillage pour la culture de cristaux de hg12 Expired CA1060762A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59248175A 1975-07-01 1975-07-01

Publications (1)

Publication Number Publication Date
CA1060762A true CA1060762A (fr) 1979-08-21

Family

ID=24370824

Family Applications (1)

Application Number Title Priority Date Filing Date
CA254,044A Expired CA1060762A (fr) 1975-07-01 1976-06-04 Methode et appareillage pour la culture de cristaux de hg12

Country Status (9)

Country Link
JP (1) JPS5224191A (fr)
AU (1) AU499145B2 (fr)
BE (1) BE843518A (fr)
CA (1) CA1060762A (fr)
DE (1) DE2629650A1 (fr)
ES (1) ES449423A1 (fr)
FR (1) FR2315994A1 (fr)
GB (1) GB1493550A (fr)
IL (1) IL49801A0 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2478135A1 (fr) * 1980-03-11 1981-09-18 Centre Nat Etd Spatiales Procede de nucleation et de croissance d'un monocristal dans une enceinte tubulaire fermee et produits obtenus
DE3304060C2 (de) * 1983-02-07 1986-03-20 Kernforschungsanlage Jülich GmbH, 5170 Jülich Verfahren und Vorrichtung zur Herstellung von Einkristallen aus der Gasphase
FR2612205A1 (fr) * 1987-03-12 1988-09-16 Ceskoslovenska Akademie Ved Procede pour assurer la croissance de monocristaux d'halogenures de mercure monovalent
ES2077496B1 (es) * 1993-04-22 1998-01-01 Invest Energeticas Medio Ambie Sistema de fabricacion de microdetectores de radiacion basados en hgi2.

Also Published As

Publication number Publication date
IL49801A0 (en) 1976-09-30
AU1534076A (en) 1978-01-05
ES449423A1 (es) 1977-07-01
DE2629650A1 (de) 1977-01-20
BE843518A (fr) 1976-10-18
AU499145B2 (en) 1979-04-05
JPS5224191A (en) 1977-02-23
GB1493550A (en) 1977-11-30
FR2315994A1 (fr) 1977-01-28

Similar Documents

Publication Publication Date Title
US5746827A (en) Method of producing large diameter silicon carbide crystals
US5683507A (en) Apparatus for growing large silicon carbide single crystals
Kösr Crystallization of Amorphous Silicon Films|
DE3856514T2 (de) Sublimationsanwachsen von Siliziumkarbideinkristallen
US4094268A (en) Apparatus for growing HgI2 crystals
EP0956381B1 (fr) Appareils de croissance de grands monocristaux de carbure de silicium
US3507625A (en) Apparatus for producing binary crystalline compounds
JPS5948792B2 (ja) 炭化けい素結晶成長法
Samelson Vapor phase growth and properties of zinc sulfide single crystals
US7537659B2 (en) Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained
Peterson et al. X‐Ray Diffraction Study of Argon Crystal Growth
US3481711A (en) Crystal growth apparatus
US3853487A (en) Method of forming crystals by the control of volatile constituent diffusion path distances through a melt
US4869776A (en) Method for the growth of a compound semiconductor crystal
JP4053125B2 (ja) ＳｉＣ単結晶の合成方法
US4299649A (en) Vapor transport process for growing selected compound semiconductors of high purity
RU2046161C1 (ru) Способ выращивания монокристаллов твердых растворов из паровой фазы и устройство для его осуществления
US3929556A (en) Nucleating growth of lead-tin-telluride single crystal with an oriented barium fluoride substrate
JPH01197399A (ja) 単結晶テルル化カドミウム水銀層を作製する方法
JP3231050B2 (ja) 化合物半導体の結晶成長法
JPH0416597A (ja) 炭化珪素単結晶の製造方法
EP0295659B1 (fr) Procédé de formation de couches monocristallines de tellurure de cadmium et de mercure
RU2199614C1 (ru) Способ выращивания кристаллов
RU2046162C1 (ru) Способ выращивания монокристаллов из паровой фазы и устройство для его осуществления
JP3154351B2 (ja) 単結晶の育成方法