CA1072422A - Methode de production de semiconducteurs de type p dopes de facon homogene - Google Patents
Methode de production de semiconducteurs de type p dopes de facon homogeneInfo
- Publication number
- CA1072422A CA1072422A CA320,601A CA320601A CA1072422A CA 1072422 A CA1072422 A CA 1072422A CA 320601 A CA320601 A CA 320601A CA 1072422 A CA1072422 A CA 1072422A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor material
- irradiation
- gamma
- photons
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 12
- 230000036647 reaction Effects 0.000 claims description 3
- 241001367053 Autographa gamma Species 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA320,601A CA1072422A (fr) | 1974-08-16 | 1979-01-31 | Methode de production de semiconducteurs de type p dopes de facon homogene |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2439430A DE2439430C2 (de) | 1974-08-16 | 1974-08-16 | Verfahren zum Herstellen von homogen dotiertem Halbleitermaterial mit p-Leitfähigkeit |
| CA233,055A CA1068583A (fr) | 1974-08-16 | 1975-08-07 | Mode de production de semiconducteur a conductivite p dope de facon homogene |
| CA320,601A CA1072422A (fr) | 1974-08-16 | 1979-01-31 | Methode de production de semiconducteurs de type p dopes de facon homogene |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1072422A true CA1072422A (fr) | 1980-02-26 |
Family
ID=27164067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA320,601A Expired CA1072422A (fr) | 1974-08-16 | 1979-01-31 | Methode de production de semiconducteurs de type p dopes de facon homogene |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1072422A (fr) |
-
1979
- 1979-01-31 CA CA320,601A patent/CA1072422A/fr not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |