CA1072643A - Circuits de portes logiques - Google Patents

Circuits de portes logiques

Info

Publication number: CA1072643A
Authority: CA; Canada
Prior art keywords: gate; base; logic; emitter; region
Prior art date: 1974-08-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA316,140A

Other languages

English (en)

Inventor

David E. Fulkerson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Honeywell Inc

Original Assignee

Honeywell Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-08-13

Filing date

1978-11-10

Publication date

1980-02-26

1974-08-13 Priority claimed from US05/497,018 external-priority patent/US3970866A/en

1978-11-10 Application filed by Honeywell Inc filed Critical Honeywell Inc

1978-11-10 Priority to CA316,140A priority Critical patent/CA1072643A/fr

1980-02-26 Application granted granted Critical

1980-02-26 Publication of CA1072643A publication Critical patent/CA1072643A/fr

Status Expired legal-status Critical Current

Links

230000006870 function Effects 0.000 claims description 43
239000000463 material Substances 0.000 claims description 4
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
229920005591 polysilicon Polymers 0.000 claims description 4
239000004065 semiconductor Substances 0.000 claims description 4
230000008901 benefit Effects 0.000 description 12
238000009792 diffusion process Methods 0.000 description 7
238000000151 deposition Methods 0.000 description 6
239000000306 component Substances 0.000 description 5
230000000875 corresponding effect Effects 0.000 description 5
230000008021 deposition Effects 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
238000005094 computer simulation Methods 0.000 description 4
238000010586 diagram Methods 0.000 description 4
238000000034 method Methods 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
239000010703 silicon Substances 0.000 description 4
230000006872 improvement Effects 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
241000283986 Lepus Species 0.000 description 2
238000010276 construction Methods 0.000 description 2
238000001465 metallisation Methods 0.000 description 2
230000003071 parasitic effect Effects 0.000 description 2
PLFFHJWXOGYWPR-HEDMGYOXSA-N (4r)-4-[(3r,3as,5ar,5br,7as,11as,11br,13ar,13bs)-5a,5b,8,8,11a,13b-hexamethyl-1,2,3,3a,4,5,6,7,7a,9,10,11,11b,12,13,13a-hexadecahydrocyclopenta[a]chrysen-3-yl]pentan-1-ol Chemical compound C([C@]1(C)[C@H]2CC[C@H]34)CCC(C)(C)[C@@H]1CC[C@@]2(C)[C@]4(C)CC[C@@H]1[C@]3(C)CC[C@@H]1[C@@H](CCCO)C PLFFHJWXOGYWPR-HEDMGYOXSA-N 0.000 description 1
RJKFOVLPORLFTN-LEKSSAKUSA-N Progesterone Chemical compound C1CC2=CC(=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H](C(=O)C)[C@@]1(C)CC2 RJKFOVLPORLFTN-LEKSSAKUSA-N 0.000 description 1
208000003251 Pruritus Diseases 0.000 description 1
230000002730 additional effect Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
229940000425 combination drug Drugs 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000001934 delay Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
101150110946 gatC gene Proteins 0.000 description 1
230000010354 integration Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
230000007803 itching Effects 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000008569 process Effects 0.000 description 1
QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
230000004044 response Effects 0.000 description 1
238000004088 simulation Methods 0.000 description 1
239000000758 substrate Substances 0.000 description 1

Landscapes

Bipolar Integrated Circuits (AREA)

CA316,140A 1974-08-13 1978-11-10 Circuits de portes logiques Expired CA1072643A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA316,140A CA1072643A (fr)	1974-08-13	1978-11-10	Circuits de portes logiques

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US05/497,018 US3970866A (en)	1974-08-13	1974-08-13	Logic gate circuits
CA316,140A CA1072643A (fr)	1974-08-13	1978-11-10	Circuits de portes logiques

Publications (1)

Publication Number	Publication Date
CA1072643A true CA1072643A (fr)	1980-02-26

Family

ID=25668822

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA316,140A Expired CA1072643A (fr)	1974-08-13	1978-11-10	Circuits de portes logiques

Country Status (1)

Country	Link
CA (1)	CA1072643A (fr)

1978
- 1978-11-10 CA CA316,140A patent/CA1072643A/fr not_active Expired

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Legal Events

Date	Code	Title	Description
1997-02-26	MKEX	Expiry