CA1074009A - Memoire a dispositif a transfert de charge - Google Patents

Memoire a dispositif a transfert de charge

Info

Publication number: CA1074009A
Authority: CA; Canada
Prior art keywords: cell; storage; cells; semiconductor; transfer
Prior art date: 1975-03-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA246,199A

Other languages

English (en)

Inventor

Robert W. Brodersen

Al F. Tasch (Jr.)

Robert C. Frye

Horng-Sen Fu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Texas Instruments Inc

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-03-03

Filing date

1976-02-20

Publication date

1980-03-18

1976-02-20 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1980-03-18 Application granted granted Critical

1980-03-18 Publication of CA1074009A publication Critical patent/CA1074009A/fr

Status Expired legal-status Critical Current

Links

230000015654 memory Effects 0.000 title claims abstract description 31
238000003860 storage Methods 0.000 claims abstract description 104
238000012546 transfer Methods 0.000 claims abstract description 87
239000004065 semiconductor Substances 0.000 claims abstract description 66
239000004020 conductor Substances 0.000 claims abstract description 59
239000011159 matrix material Substances 0.000 claims abstract description 29
239000012212 insulator Substances 0.000 claims abstract description 26
239000002019 doping agent Substances 0.000 claims abstract description 4
230000004044 response Effects 0.000 claims abstract description 4
239000010410 layer Substances 0.000 claims description 74
239000000758 substrate Substances 0.000 claims description 34
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
239000002184 metal Substances 0.000 claims description 7
239000002344 surface layer Substances 0.000 claims description 7
238000002955 isolation Methods 0.000 claims 2
230000005669 field effect Effects 0.000 claims 1
238000000034 method Methods 0.000 abstract description 12
238000009825 accumulation Methods 0.000 abstract description 11
230000008569 process Effects 0.000 abstract description 6
238000009792 diffusion process Methods 0.000 abstract description 3
238000005468 ion implantation Methods 0.000 abstract description 3
210000004027 cell Anatomy 0.000 description 114
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
229910052814 silicon oxide Inorganic materials 0.000 description 19
229920005591 polysilicon Polymers 0.000 description 13
230000035508 accumulation Effects 0.000 description 10
238000004519 manufacturing process Methods 0.000 description 7
238000005036 potential barrier Methods 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
230000008901 benefit Effects 0.000 description 4
230000002093 peripheral effect Effects 0.000 description 4
229910052710 silicon Inorganic materials 0.000 description 4
239000010703 silicon Substances 0.000 description 4
239000002800 charge carrier Substances 0.000 description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
238000003491 array Methods 0.000 description 2
229910052796 boron Inorganic materials 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
238000002513 implantation Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
RZHBRWSVUJWTRD-UHFFFAOYSA-N 6-(2,4-dichlorophenyl)-2,3,4-trihydroxyhexane-1-sulfonic acid Chemical compound OS(=O)(=O)CC(O)C(O)C(O)CCC1=CC=C(Cl)C=C1Cl RZHBRWSVUJWTRD-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000010351 charge transfer process Methods 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
229940000425 combination drug Drugs 0.000 description 1
230000008878 coupling Effects 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000006870 function Effects 0.000 description 1
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
239000007943 implant Substances 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000000059 patterning Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
210000000352 storage cell Anatomy 0.000 description 1
238000004347 surface barrier Methods 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

CA246,199A 1975-03-03 1976-02-20 Memoire a dispositif a transfert de charge Expired CA1074009A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US55488975A	1975-03-03	1975-03-03

Publications (1)

Publication Number	Publication Date
CA1074009A true CA1074009A (fr)	1980-03-18

Family

ID=24215119

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA246,199A Expired CA1074009A (fr)	1975-03-03	1976-02-20	Memoire a dispositif a transfert de charge

Country Status (7)

Country	Link
JP (1)	JPS51112138A (fr)
CA (1)	CA1074009A (fr)
DE (1)	DE2608731A1 (fr)
FR (1)	FR2303345A1 (fr)
GB (1)	GB1542288A (fr)
IT (1)	IT1057288B (fr)
NL (1)	NL7602155A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0160951B2 (fr) *	1978-01-03	1989-12-26	Advanced Micro Devices Inc
JPS5793542A (en) *	1980-12-03	1982-06-10	Hitachi Ltd	Semiconductor integrated circuit device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2243988C3 (de) *	1972-09-07	1980-03-20	Siemens Ag, 1000 Berlin Und 8000 Muenchen	Hableiteranordnung mit mindestens einem MIS-Kondensator

1976
- 1976-02-20 CA CA246,199A patent/CA1074009A/fr not_active Expired
- 1976-02-26 GB GB767629A patent/GB1542288A/en not_active Expired
- 1976-03-02 NL NL7602155A patent/NL7602155A/xx not_active Application Discontinuation
- 1976-03-02 IT IT7648376A patent/IT1057288B/it active
- 1976-03-03 DE DE19762608731 patent/DE2608731A1/de not_active Withdrawn
- 1976-03-03 FR FR7605962A patent/FR2303345A1/fr active Pending
- 1976-03-03 JP JP51023028A patent/JPS51112138A/ja active Pending

Also Published As

Publication number	Publication date
FR2303345A1 (fr)	1976-10-01
IT1057288B (it)	1982-03-10
GB1542288A (en)	1979-03-14
DE2608731A1 (de)	1976-09-16
NL7602155A (nl)	1976-09-07
JPS51112138A (en)	1976-10-04

Legal Events

Date	Code	Title	Description
1997-03-18	MKEX	Expiry

Publication	Publication Date	Title
US4060738A (en)	1977-11-29	Charge coupled device random access memory
US4612629A (en)	1986-09-16	Highly scalable dynamic RAM cell with self-signal amplification
EP0014388B1 (fr)	1983-12-21	Dispositif semiconducteur à mémoire
US4373248A (en)	1983-02-15	Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
US4448400A (en)	1984-05-15	Highly scalable dynamic RAM cell with self-signal amplification
US4669062A (en)	1987-05-26	Two-tiered dynamic random access memory (DRAM) cell
US4864374A (en)	1989-09-05	Two-transistor dram cell with high alpha particle immunity
US4110776A (en)	1978-08-29	Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
US4291391A (en)	1981-09-22	Taper isolated random access memory array and method of operating
US4240195A (en)	1980-12-23	Dynamic random access memory
US5463234A (en)	1995-10-31	High-speed semiconductor gain memory cell with minimal area occupancy
US4493057A (en)	1985-01-08	Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
US4070653A (en)	1978-01-24	Random access memory cell with ion implanted resistor element
US4752819A (en)	1988-06-21	Semiconductor integrated circuit device having a carrier trapping trench arrangement
US4695864A (en)	1987-09-22	Dynamic storage device with extended information holding time
US4126899A (en)	1978-11-21	Junction field effect transistor random access memory
US4118794A (en)	1978-10-03	Memory array with larger memory capacitors at row ends
JPS61107762A (ja)	1986-05-26	半導体記憶装置の製造方法
US5010379A (en)	1991-04-23	Semiconductor memory device with two storage nodes
US4353082A (en)	1982-10-05	Buried sense line V-groove MOS random access memory
US4471368A (en)	1984-09-11	Dynamic RAM memory and vertical charge coupled dynamic storage cell therefor
EP0118568A1 (fr)	1984-09-19	Dispositif de prise d'image a semiconducteurs
US4330849A (en)	1982-05-18	Complementary semiconductor memory device
CA1074009A (fr)	1980-03-18	Memoire a dispositif a transfert de charge
US5218217A (en)	1993-06-08	Dynamic random access memory device and method of manufacturing