CA1075523A - Methode de conversion d'une couche photoresistante positive en image photoresistante negative - Google Patents

Methode de conversion d'une couche photoresistante positive en image photoresistante negative

Info

Publication number: CA1075523A
Authority: CA; Canada
Prior art keywords: photoresist; layer; image; exposed; exposure
Prior art date: 1976-06-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA256,223A

Other languages

English (en)

Inventor

Holger Moritz

Gabor Paal

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-06-30

Filing date

1976-06-30

Publication date

1980-04-15

1976-06-30 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1976-06-30 Priority to CA256,223A priority Critical patent/CA1075523A/fr

1980-04-15 Application granted granted Critical

1980-04-15 Publication of CA1075523A publication Critical patent/CA1075523A/fr

Status Expired legal-status Critical Current

Links

229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 64
238000000034 method Methods 0.000 title claims abstract description 21
239000000463 material Substances 0.000 claims abstract description 17
238000010438 heat treatment Methods 0.000 claims abstract description 3
239000000758 substrate Substances 0.000 claims description 9
238000012545 processing Methods 0.000 claims description 7
230000005855 radiation Effects 0.000 claims description 5
125000000217 alkyl group Chemical group 0.000 claims description 4
125000004432 carbon atom Chemical group C* 0.000 claims description 4
229920001568 phenolic resin Polymers 0.000 claims description 4
KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
238000004519 manufacturing process Methods 0.000 claims description 3
KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 claims description 2
FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 claims description 2
231100000489 sensitizer Toxicity 0.000 claims 2
WVCXSPJPERKPJS-UHFFFAOYSA-L azane;dichloropalladium;hydrate Chemical compound N.N.N.N.O.Cl[Pd]Cl WVCXSPJPERKPJS-UHFFFAOYSA-L 0.000 claims 1
-1 hydroxyethyl residue Chemical group 0.000 claims 1
150000003459 sulfonic acid esters Chemical class 0.000 claims 1
239000002904 solvent Substances 0.000 abstract description 2
230000008569 process Effects 0.000 description 14
235000012431 wafers Nutrition 0.000 description 11
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
239000003112 inhibitor Substances 0.000 description 8
238000005530 etching Methods 0.000 description 7
URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 6
239000000377 silicon dioxide Substances 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
229910000403 monosodium phosphate Inorganic materials 0.000 description 4
235000019799 monosodium phosphate Nutrition 0.000 description 4
AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
239000004115 Sodium Silicate Substances 0.000 description 3
238000010894 electron beam technology Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
235000011121 sodium hydroxide Nutrition 0.000 description 3
235000019795 sodium metasilicate Nutrition 0.000 description 3
NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 3
229910052911 sodium silicate Inorganic materials 0.000 description 3
238000007669 thermal treatment Methods 0.000 description 3
AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
KGWYICAEPBCRBL-UHFFFAOYSA-N 1h-indene-1-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C=CC2=C1 KGWYICAEPBCRBL-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
238000004132 cross linking Methods 0.000 description 2
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
229910052753 mercury Inorganic materials 0.000 description 2
238000007157 ring contraction reaction Methods 0.000 description 2
238000004528 spin coating Methods 0.000 description 2
MOMKYJPSVWEWPM-UHFFFAOYSA-N 4-(chloromethyl)-2-(4-methylphenyl)-1,3-thiazole Chemical compound C1=CC(C)=CC=C1C1=NC(CCl)=CS1 MOMKYJPSVWEWPM-UHFFFAOYSA-N 0.000 description 1
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
101100490437 Mus musculus Acvrl1 gene Proteins 0.000 description 1
239000003513 alkali Substances 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
229920003211 cis-1,4-polyisoprene Polymers 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000003993 interaction Effects 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
229920003986 novolac Polymers 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
239000011148 porous material Substances 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
235000019983 sodium metaphosphate Nutrition 0.000 description 1
239000000126 substance Substances 0.000 description 1
BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
CXVGEDCSTKKODG-UHFFFAOYSA-N sulisobenzone Chemical compound C1=C(S(O)(=O)=O)C(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 CXVGEDCSTKKODG-UHFFFAOYSA-N 0.000 description 1
229960000368 sulisobenzone Drugs 0.000 description 1

Landscapes

Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

CA256,223A 1976-06-30 1976-06-30 Methode de conversion d'une couche photoresistante positive en image photoresistante negative Expired CA1075523A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA256,223A CA1075523A (fr)	1976-06-30	1976-06-30	Methode de conversion d'une couche photoresistante positive en image photoresistante negative

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA256,223A CA1075523A (fr)	1976-06-30	1976-06-30	Methode de conversion d'une couche photoresistante positive en image photoresistante negative

Publications (1)

Publication Number	Publication Date
CA1075523A true CA1075523A (fr)	1980-04-15

Family

ID=4106348

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA256,223A Expired CA1075523A (fr)	1976-06-30	1976-06-30	Methode de conversion d'une couche photoresistante positive en image photoresistante negative

Country Status (1)

Country	Link
CA (1)	CA1075523A (fr)

1976
- 1976-06-30 CA CA256,223A patent/CA1075523A/fr not_active Expired

Similar Documents

Publication	Publication Date	Title
US4104070A (en)	1978-08-01	Method of making a negative photoresist image
US4908298A (en)	1990-03-13	Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
JP3184530B2 (ja)	2001-07-09	金属イオンレベルが低いフォトレジスト
US4600686A (en)	1986-07-15	Method of forming a resist mask resistant to plasma etching
US4007047A (en)	1977-02-08	Modified processing of positive photoresists
JPS6249614B2 (fr)	1987-10-20
KR20010015280A (ko)	2001-02-26	포토레지스트패턴의 형성방법
JPH07261393A (ja)	1995-10-13	ネガ型レジスト組成物
US4885232A (en)	1989-12-05	High temperature post exposure baking treatment for positive photoresist compositions
JPH0650396B2 (ja)	1994-06-29	ポジ型ホトレジスト組成物
EP0195291B1 (fr)	1991-04-24	Procédé pour obtenir des surfaces texturées dans des films multicouches et emploi dans la fabrication de circuits et systèmes semi-conducteurs
EP0021719B1 (fr)	1984-05-16	Procédé pour la fabrication d'images résistantes négatives et images résistantes
US4464458A (en)	1984-08-07	Process for forming resist masks utilizing O-quinone diazide and pyrene
JPH10504599A (ja)	1998-05-06	陰イオン交換樹脂を使用する、ノボラック樹脂溶液中の金属イオン低減
EP0211350A2 (fr)	1987-02-25	Composition photoréserve et procédé d'application
US4142892A (en)	1979-03-06	Method of reducing the defect density in a positive-working photoresist layer using a salt of imidazolinium
CA1075523A (fr)	1980-04-15	Methode de conversion d'une couche photoresistante positive en image photoresistante negative
JPH06267838A (ja)	1994-09-22	レジストパターンの形成方法
JP2000505913A (ja)	2000-05-16	２，４―ジニトロ―１―ナフトールを含有するポジ型フォトレジスト組成物
EP0318956A3 (fr)	1990-09-12	Composition photoréserve positive et emploi par l'obtention d'images positives en relief
JP3079195B2 (ja)	2000-08-21	ポジ型感放射線性レジスト用現像液
JP2548268B2 (ja)	1996-10-30	レジストパターンの形成方法
JPH06338452A (ja)	1994-12-06	レジストパタ−ンの形成方法
JPS6156867B2 (fr)	1986-12-04
JP2506385B2 (ja)	1996-06-12	レジストのパタ―ニング方法

Legal Events

Date	Code	Title	Description
1997-04-15	MKEX	Expiry