CA1076257A - Dispositifs a transfert de charge - Google Patents

Dispositifs a transfert de charge

Info

Publication number
CA1076257A
CA1076257A CA244,374A CA244374A CA1076257A CA 1076257 A CA1076257 A CA 1076257A CA 244374 A CA244374 A CA 244374A CA 1076257 A CA1076257 A CA 1076257A
Authority
CA
Canada
Prior art keywords
electrodes
regions
substrate
layer
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA244,374A
Other languages
English (en)
Inventor
Robert L. Rodgers (3Rd)
William N. Henry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1076257A publication Critical patent/CA1076257A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/671Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor having lateral variation in doping or structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/466Three-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • H10D44/476Three-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
CA244,374A 1975-02-03 1976-01-28 Dispositifs a transfert de charge Expired CA1076257A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4544/75A GB1528923A (en) 1975-02-03 1975-02-03 Single layer doped poly-silicon gate structure for charge-coupled devices

Publications (1)

Publication Number Publication Date
CA1076257A true CA1076257A (fr) 1980-04-22

Family

ID=9779166

Family Applications (1)

Application Number Title Priority Date Filing Date
CA244,374A Expired CA1076257A (fr) 1975-02-03 1976-01-28 Dispositifs a transfert de charge

Country Status (6)

Country Link
JP (1) JPS51102583A (fr)
CA (1) CA1076257A (fr)
DE (1) DE2604081C3 (fr)
FR (1) FR2299726A1 (fr)
GB (1) GB1528923A (fr)
NL (1) NL7601021A (fr)

Also Published As

Publication number Publication date
DE2604081C3 (de) 1978-11-23
JPS51102583A (fr) 1976-09-10
GB1528923A (en) 1978-10-18
DE2604081B2 (de) 1978-03-23
NL7601021A (nl) 1976-08-05
AU1058976A (en) 1977-08-04
DE2604081A1 (de) 1976-08-05
FR2299726A1 (fr) 1976-08-27

Similar Documents

Publication Publication Date Title
JP2585331B2 (ja) 高耐圧プレーナ素子
US6190948B1 (en) Method of forming power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability
KR100330847B1 (ko) 반절연층을갖는반도체장치
US5543637A (en) Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
US4586064A (en) DMOS with high-resistivity gate electrode
JP3082671B2 (ja) トランジスタ素子及びその製造方法
JP2619872B2 (ja) ラテラルトランジスタ及びラテラルトランジスタを有する半導体集積回路の製造方法
US4746960A (en) Vertical depletion-mode j-MOSFET
US5317174A (en) Bulk charge modulated device photocell
US4047215A (en) Uniphase charge coupled devices
EP0057024B1 (fr) Dispositif semiconducteur comportant un dispositif de sécurité
US3997908A (en) Schottky gate field effect transistor
EP0772241B1 (fr) Dispositif de puissance à haute densité en technologie MOS
US4178605A (en) Complementary MOS inverter structure
US4796072A (en) Solid-state imaging device with potential barriers between pixels
CA1044377A (fr) Dispositif a effet de champ semiconducteur a isolateur metallique
KR100218849B1 (ko) 고체촬상소자의제조방법
JP3644697B2 (ja) 電力mos装置用集積構造電流感知抵抗
US4041519A (en) Low transient effect switching device and method
US4725872A (en) Fast channel single phase buried channel CCD
US5965928A (en) Semiconductor device with MOS capacitor and fabrication method thereof
US3534235A (en) Igfet with offset gate and biconductivity channel region
Brown et al. Transparent metal oxide electrode CID imager
CA1149496A (fr) Capteur d'images a semiconducteur
CA1076257A (fr) Dispositifs a transfert de charge

Legal Events

Date Code Title Description
MKEX Expiry