CA1077607A - Dispositif electroluminescent a semiconducteur et methode de fabrication - Google Patents

Dispositif electroluminescent a semiconducteur et methode de fabrication

Info

Publication number
CA1077607A
CA1077607A CA255,114A CA255114A CA1077607A CA 1077607 A CA1077607 A CA 1077607A CA 255114 A CA255114 A CA 255114A CA 1077607 A CA1077607 A CA 1077607A
Authority
CA
Canada
Prior art keywords
region
regions
layer
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA255,114A
Other languages
English (en)
Inventor
Kunihiko Asahi
Morio Inoue
Kunio Itoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of CA1077607A publication Critical patent/CA1077607A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures

Landscapes

  • Semiconductor Lasers (AREA)
CA255,114A 1975-06-20 1976-06-17 Dispositif electroluminescent a semiconducteur et methode de fabrication Expired CA1077607A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50075902A JPS5811111B2 (ja) 1975-06-20 1975-06-20 半導体レ−ザ装置の製造方法

Publications (1)

Publication Number Publication Date
CA1077607A true CA1077607A (fr) 1980-05-13

Family

ID=13589720

Family Applications (1)

Application Number Title Priority Date Filing Date
CA255,114A Expired CA1077607A (fr) 1975-06-20 1976-06-17 Dispositif electroluminescent a semiconducteur et methode de fabrication

Country Status (5)

Country Link
JP (1) JPS5811111B2 (fr)
CA (1) CA1077607A (fr)
DE (1) DE2627355C3 (fr)
FR (1) FR2316747A1 (fr)
GB (1) GB1543220A (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194933A (en) * 1977-05-06 1980-03-25 Bell Telephone Laboratories, Incorporated Method for fabricating junction lasers having lateral current confinement
US4169997A (en) * 1977-05-06 1979-10-02 Bell Telephone Laboratories, Incorporated Lateral current confinement in junction lasers
DE3065856D1 (en) * 1979-02-13 1984-01-19 Fujitsu Ltd A semiconductor light emitting device
JPS57136385A (en) * 1981-02-16 1982-08-23 Sanyo Electric Co Ltd Manufacture of semiconductor laser
DE3105786A1 (de) * 1981-02-17 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Herstellung von lumineszenz- oder laserdioden mit intern begrenzter leuchtflaeche
JPS57160186A (en) * 1981-03-27 1982-10-02 Nec Corp Manufacture of semiconductor laser
JPS60130880A (ja) * 1983-12-19 1985-07-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS63248168A (ja) * 1987-04-02 1988-10-14 Nec Corp ヘテロ接合バイポ−ラトランジスタおよびその製造方法
JPS63248167A (ja) * 1987-04-02 1988-10-14 Nec Corp ヘテロ接合バイポ−ラトランジスタの製造方法
DE10008584A1 (de) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946878A (fr) * 1972-09-08 1974-05-07

Also Published As

Publication number Publication date
DE2627355B2 (de) 1978-07-20
FR2316747B1 (fr) 1980-08-14
GB1543220A (en) 1979-03-28
FR2316747A1 (fr) 1977-01-28
JPS51151090A (en) 1976-12-25
DE2627355C3 (de) 1979-03-22
DE2627355A1 (de) 1976-12-23
JPS5811111B2 (ja) 1983-03-01

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Legal Events

Date Code Title Description
MKEX Expiry
MKEX Expiry

Effective date: 19970513