CA1080372A - Cadmium telluride nuclear detector - Google Patents

Cadmium telluride nuclear detector

Info

Publication number
CA1080372A
CA1080372A CA268,955A CA268955A CA1080372A CA 1080372 A CA1080372 A CA 1080372A CA 268955 A CA268955 A CA 268955A CA 1080372 A CA1080372 A CA 1080372A
Authority
CA
Canada
Prior art keywords
cadmium telluride
monocrystal
insulating layer
leakage current
surface portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA268,955A
Other languages
English (en)
French (fr)
Inventor
Anka A. Konova
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INSTITUTE PO PHYSIDA NA TVARDOTO TYALO PRI BAN
Original Assignee
INSTITUTE PO PHYSIDA NA TVARDOTO TYALO PRI BAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INSTITUTE PO PHYSIDA NA TVARDOTO TYALO PRI BAN filed Critical INSTITUTE PO PHYSIDA NA TVARDOTO TYALO PRI BAN
Application granted granted Critical
Publication of CA1080372A publication Critical patent/CA1080372A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/298Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
CA268,955A 1975-12-30 1976-12-30 Cadmium telluride nuclear detector Expired CA1080372A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG3197375 1975-12-30

Publications (1)

Publication Number Publication Date
CA1080372A true CA1080372A (en) 1980-06-24

Family

ID=3901839

Family Applications (1)

Application Number Title Priority Date Filing Date
CA268,955A Expired CA1080372A (en) 1975-12-30 1976-12-30 Cadmium telluride nuclear detector

Country Status (5)

Country Link
JP (1) JPS5292577A (cs)
CA (1) CA1080372A (cs)
CS (1) CS213611B1 (cs)
FR (1) FR2337435A1 (cs)
GB (1) GB1511410A (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149983A (en) * 1981-03-12 1982-09-16 Yokogawa Hokushin Electric Corp Radiation detector
JPS62115391A (ja) * 1985-11-13 1987-05-27 Nippon Mining Co Ltd CdTe放射線検出器
JPS62226082A (ja) * 1986-03-28 1987-10-05 Yokogawa Electric Corp β線検出装置
FR2738080B1 (fr) * 1995-08-24 1997-10-31 Commissariat Energie Atomique Dispositif de detection de rayons x a base de semi-conducteurs
WO2000003266A1 (en) * 1998-07-09 2000-01-20 Mitsubishi Denki Kabushiki Kaisha Radiation detector

Also Published As

Publication number Publication date
FR2337435B3 (cs) 1979-08-31
GB1511410A (en) 1978-05-17
CS213611B1 (en) 1982-04-09
JPS5292577A (en) 1977-08-04
FR2337435A1 (fr) 1977-07-29

Similar Documents

Publication Publication Date Title
US4972244A (en) Photodiode and photodiode array on a II-VI material and processes for the production thereof
US4378460A (en) Metal electrode for amorphous silicon solar cells
CA1270580C (en) THIN FILM ELECTRICAL DEVICES WITH AMORPHOUS CARBON ELECTRODES
FR2557727A1 (fr) Transistor a effet de champ en arseniure de gallium a grille isole et mode inverse
US3648340A (en) Hybrid solid-state voltage-variable tuning capacitor
CA1080372A (en) Cadmium telluride nuclear detector
GB1241379A (en) Improvements in or relating to target structures for cathode ray tubes
US4012767A (en) Electrical interconnections for semi-conductor devices
Fraser et al. Improved Aging and Switching of Lead Zirconate‐Lead Titanate Ceramics with Indium Electrodes
Wilmsen The MOS/InP interface
US4649409A (en) Photoelectric transducer element
US4021837A (en) Symmetrical semiconductor switch having carrier lifetime degrading structure
US4430663A (en) Prevention of surface channels in silicon semiconductor devices
JPS55102267A (en) Semiconductor control element
Nemirovsky et al. The interface of plasma‐anodized Hg1− x Cd x Te
US3830717A (en) Semiconductor camera tube target
US3568010A (en) Thin film capacitive bolometer and temperature sensor
US3457470A (en) Radiation detectors having a semiconductor body
JPS57172765A (en) Electrostatic induction thyristor
US4462019A (en) Photosensitive semiconductor resistor
US3664895A (en) Method of forming a camera tube diode array target by masking and diffusion
JP3681190B2 (ja) 高耐圧プレーナ型受光素子
US3723278A (en) Method of depositing hafnium-tantalum nitride layer by reactive sputtering
IE792474L (en) Switching device
RU2061282C1 (ru) Полупроводниковый детектор ионизирующего излучения

Legal Events

Date Code Title Description
MKEX Expiry