CA1097824A - Dispositif de commutation a semiconducteur - Google Patents

Dispositif de commutation a semiconducteur

Info

Publication number
CA1097824A
CA1097824A CA301,187A CA301187A CA1097824A CA 1097824 A CA1097824 A CA 1097824A CA 301187 A CA301187 A CA 301187A CA 1097824 A CA1097824 A CA 1097824A
Authority
CA
Canada
Prior art keywords
region
wafer
heavy metal
recombination centers
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA301,187A
Other languages
English (en)
Inventor
Hiroshi Gamo
Shigeru Hokuyo
Akira Kawakami
Kazuo Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to CA301,187A priority Critical patent/CA1097824A/fr
Application granted granted Critical
Publication of CA1097824A publication Critical patent/CA1097824A/fr
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
CA301,187A 1978-04-14 1978-04-14 Dispositif de commutation a semiconducteur Expired CA1097824A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA301,187A CA1097824A (fr) 1978-04-14 1978-04-14 Dispositif de commutation a semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA301,187A CA1097824A (fr) 1978-04-14 1978-04-14 Dispositif de commutation a semiconducteur

Publications (1)

Publication Number Publication Date
CA1097824A true CA1097824A (fr) 1981-03-17

Family

ID=4111246

Family Applications (1)

Application Number Title Priority Date Filing Date
CA301,187A Expired CA1097824A (fr) 1978-04-14 1978-04-14 Dispositif de commutation a semiconducteur

Country Status (1)

Country Link
CA (1) CA1097824A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component

Similar Documents

Publication Publication Date Title
US4165517A (en) Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
US6043516A (en) Semiconductor component with scattering centers within a lateral resistor region
US4281336A (en) Thyristor element with short turn-off time and method for producing such element
US4177477A (en) Semiconductor switching device
US4151011A (en) Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure
US3513367A (en) High current gate controlled switches
US5883403A (en) Power semiconductor device
US3349299A (en) Power recitfier of the npnp type having recombination centers therein
US5049965A (en) Thyristor having adjustable breakover voltage and method of manufacture
GB2038092A (en) Reducing the switching time of semiconductor devices by neutron irradiation
US6489187B2 (en) Method for setting the breakover voltage of a thyristor
JPS5819125B2 (ja) 半導体装置の製造方法
US3877997A (en) Selective irradiation for fast switching thyristor with low forward voltage drop
US4060825A (en) High speed high power two terminal solid state switch fired by dV/dt
US4210464A (en) Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers
EP0030370B1 (fr) Thyristor à conduction inverse à implantation d'ions
US4238761A (en) Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode
EP0125138B1 (fr) Thyristor autoprotecteur et procédé de fabrication
US4134778A (en) Selective irradiation of thyristors
US3990091A (en) Low forward voltage drop thyristor
JP3210013B2 (ja) 調整可能なブレークオーバ電圧を有するサイリスタおよびその製造方法
US4040170A (en) Integrated gate assisted turn-off, amplifying gate thyristor, and a method for making the same
EP0190162B1 (fr) Thyristor a mise sous tension regulee
EP0137319B1 (fr) Dispositif semi-conducteur et procédé de fabrication
US4043837A (en) Low forward voltage drop thyristor

Legal Events

Date Code Title Description
MKEX Expiry