CA1116985A - Matrice capillaire - Google Patents
Matrice capillaireInfo
- Publication number
- CA1116985A CA1116985A CA000322467A CA322467A CA1116985A CA 1116985 A CA1116985 A CA 1116985A CA 000322467 A CA000322467 A CA 000322467A CA 322467 A CA322467 A CA 322467A CA 1116985 A CA1116985 A CA 1116985A
- Authority
- CA
- Canada
- Prior art keywords
- die
- die member
- top end
- grooves
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000155 melt Substances 0.000 claims abstract description 22
- 230000012010 growth Effects 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 210000001736 capillary Anatomy 0.000 description 40
- 238000000034 method Methods 0.000 description 13
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910001602 chrysoberyl Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000036433 growing body Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89949778A | 1978-04-24 | 1978-04-24 | |
| US899,497 | 1978-04-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1116985A true CA1116985A (fr) | 1982-01-26 |
Family
ID=25411088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000322467A Expired CA1116985A (fr) | 1978-04-24 | 1979-02-28 | Matrice capillaire |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS6033799B2 (fr) |
| AU (1) | AU527424B2 (fr) |
| CA (1) | CA1116985A (fr) |
| DE (1) | DE2916389A1 (fr) |
| FR (1) | FR2424060A1 (fr) |
| GB (1) | GB2019243B (fr) |
| IL (1) | IL56786A (fr) |
| IN (1) | IN151094B (fr) |
| NL (1) | NL7902358A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3366718D1 (en) * | 1983-02-09 | 1986-11-13 | Commissariat Energie Atomique | Method of producing plates of metallic or semiconducting material by moulding without direct contact with the walls of the mould |
| WO2003033780A1 (fr) * | 2001-10-16 | 2003-04-24 | Utar Scientific Inc. | Methode de croissance de cristaux piezoelectriques de gallium-lanthanide |
| JP7436978B2 (ja) * | 2019-10-28 | 2024-02-22 | Ａｇｃ株式会社 | 単結晶インゴット、結晶育成用ダイ、及び単結晶の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1577413A (en) * | 1976-03-17 | 1980-10-22 | Metals Research Ltd | Growth of crystalline material |
-
1979
- 1979-02-28 CA CA000322467A patent/CA1116985A/fr not_active Expired
- 1979-02-28 IN IN143/DEL/79A patent/IN151094B/en unknown
- 1979-03-05 IL IL5678679A patent/IL56786A/xx unknown
- 1979-03-07 AU AU44871/79A patent/AU527424B2/en not_active Ceased
- 1979-03-12 GB GB7908542A patent/GB2019243B/en not_active Expired
- 1979-03-26 NL NL7902358A patent/NL7902358A/xx not_active Application Discontinuation
- 1979-04-20 JP JP4890179A patent/JPS6033799B2/ja not_active Expired
- 1979-04-23 DE DE19792916389 patent/DE2916389A1/de not_active Withdrawn
- 1979-04-23 FR FR7910233A patent/FR2424060A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| IN151094B (fr) | 1983-02-19 |
| IL56786A (en) | 1981-10-30 |
| GB2019243B (en) | 1982-06-16 |
| FR2424060B1 (fr) | 1984-08-24 |
| GB2019243A (en) | 1979-10-31 |
| DE2916389A1 (de) | 1979-10-31 |
| JPS6033799B2 (ja) | 1985-08-05 |
| JPS54142180A (en) | 1979-11-06 |
| FR2424060A1 (fr) | 1979-11-23 |
| AU527424B2 (en) | 1983-03-03 |
| NL7902358A (nl) | 1979-10-26 |
| AU4487179A (en) | 1979-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |