CA1123122A - Commutateur haute tension a semiconducteur a porte double isole par dielectrique - Google Patents

Commutateur haute tension a semiconducteur a porte double isole par dielectrique

Info

Publication number
CA1123122A
CA1123122A CA340,787A CA340787A CA1123122A CA 1123122 A CA1123122 A CA 1123122A CA 340787 A CA340787 A CA 340787A CA 1123122 A CA1123122 A CA 1123122A
Authority
CA
Canada
Prior art keywords
region
layer
localized
semiconductor body
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA340,787A
Other languages
English (en)
Inventor
Alfred U. Mac Rae
Peter W. Shackle
Adrian R. Hartman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1123122A publication Critical patent/CA1123122A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials

Landscapes

  • Thyristors (AREA)
CA340,787A 1978-12-20 1979-11-28 Commutateur haute tension a semiconducteur a porte double isole par dielectrique Expired CA1123122A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97202178A 1978-12-20 1978-12-20
US972,021 1978-12-20

Publications (1)

Publication Number Publication Date
CA1123122A true CA1123122A (fr) 1982-05-04

Family

ID=25519059

Family Applications (1)

Application Number Title Priority Date Filing Date
CA340,787A Expired CA1123122A (fr) 1978-12-20 1979-11-28 Commutateur haute tension a semiconducteur a porte double isole par dielectrique

Country Status (3)

Country Link
BE (1) BE880728A (fr)
CA (1) CA1123122A (fr)
TR (1) TR21056A (fr)

Also Published As

Publication number Publication date
TR21056A (tr) 1983-06-08
BE880728A (fr) 1980-04-16

Similar Documents

Publication Publication Date Title
US4742380A (en) Switch utilizing solid-state relay
US3512058A (en) High voltage transient protection for an insulated gate field effect transistor
EP0111803B1 (fr) Redresseurs latéraux à porte isolée
US4743952A (en) Insulated-gate semiconductor device with low on-resistance
US3806773A (en) Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
EP0071335B1 (fr) Transistor à effet de champ
US4608590A (en) High voltage dielectrically isolated solid-state switch
US5077590A (en) High voltage semiconductor device
EP0177665B1 (fr) Dispositif de commutation blocable à semi-conducteur
US5587595A (en) Lateral field-effect-controlled semiconductor device on insulating substrate
US6914270B2 (en) IGBT with PN insulation and production method
US4630092A (en) Insulated gate-controlled thyristor
US4587545A (en) High voltage dielectrically isolated remote gate solid-state switch
JP2687163B2 (ja) ターンオフ可能なサイリスタ
US4587656A (en) High voltage solid-state switch
EP0115098B1 (fr) Dispositif transistor latéral de type DMOS comportant une région d'injection
US4602268A (en) High voltage dielectrically isolated dual gate solid-state switch
US4309715A (en) Integral turn-on high voltage switch
CA1123122A (fr) Commutateur haute tension a semiconducteur a porte double isole par dielectrique
EP0099926B1 (fr) Thyristor lateral bidirectionnel commande par effet de champ
US5532502A (en) Conductivity-modulated-type MOSFET
US4586073A (en) High voltage junction solid-state switch
WO1980001337A1 (fr) Commutateur a semi-conducteur de haute tension a isolation dielectrique
US4641163A (en) MIS-field effect transistor with charge carrier injection
US4467344A (en) Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Legal Events

Date Code Title Description
MKEX Expiry