CA1125421A - Senseur d'images a semiconducteur - Google Patents

Senseur d'images a semiconducteur

Info

Publication number
CA1125421A
CA1125421A CA312,252A CA312252A CA1125421A CA 1125421 A CA1125421 A CA 1125421A CA 312252 A CA312252 A CA 312252A CA 1125421 A CA1125421 A CA 1125421A
Authority
CA
Canada
Prior art keywords
sensor
substrate
solid state
state image
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA312,252A
Other languages
English (en)
Inventor
Shigeyuki Ochi
Takeo Hashimoto
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA1125421A publication Critical patent/CA1125421A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)
CA312,252A 1977-09-29 1978-09-28 Senseur d'images a semiconducteur Expired CA1125421A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit
JP126885/77 1977-09-29

Publications (1)

Publication Number Publication Date
CA1125421A true CA1125421A (fr) 1982-06-08

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
CA312,252A Expired CA1125421A (fr) 1977-09-29 1978-09-28 Senseur d'images a semiconducteur

Country Status (6)

Country Link
JP (1) JPS5451318A (fr)
CA (1) CA1125421A (fr)
DE (1) DE2842346C2 (fr)
FR (1) FR2409646A1 (fr)
GB (1) GB2007937B (fr)
NL (1) NL7809866A (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (fr) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
DE2939403A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte schaltung zur zeilenweisen bildabtastung
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
EP0065599B1 (fr) * 1981-05-19 1986-01-29 Texas Instruments Incorporated Dispositif de prise de vue infrarouge à l'aide d'une matrice de détecteurs infrarouges et méthode de formation d'images infrarouges
DE3121494A1 (de) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München Anordnung zum beruehrungslosen messen von elektrischen ladungsbildern bei elektroradiographischen aufzeichnungsverfahren
EP0066020B1 (fr) * 1981-06-03 1985-10-23 Texas Instruments Incorporated Détecteur infrarouge utilisant un dispositif de capteurs à transfert de charges
JPS586682A (ja) * 1981-07-06 1983-01-14 Sony Corp 固体撮像装置
JPS5847378A (ja) * 1981-09-17 1983-03-19 Canon Inc 撮像素子
JPS58142570A (ja) * 1982-02-19 1983-08-24 Sony Corp 固体撮像装置
JPS60254770A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd イメージセンサ
JPS61144874A (ja) * 1984-12-19 1986-07-02 Toshiba Corp 電荷転送装置
NL8503243A (nl) * 1985-11-25 1987-06-16 Optische Ind De Oude Delft Nv Beeldopneeminrichting voor digitale radiografie.
JPH07107928B2 (ja) * 1986-03-25 1995-11-15 ソニー株式会社 固体撮像装置
JPH02113678A (ja) * 1988-10-21 1990-04-25 Nec Corp 固体撮像装置
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
FR2687265A1 (fr) * 1993-01-08 1993-08-13 Scanera Sc Dispositif de prise de vue electronique a haute dynamique et procede de prise de vue de scenes tres contrastees.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654115B2 (fr) * 1974-03-29 1981-12-23
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers
JPS5846905B2 (ja) * 1975-11-10 1983-10-19 ソニー株式会社 コタイサツゾウソウチ
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Also Published As

Publication number Publication date
DE2842346A1 (de) 1979-04-12
GB2007937B (en) 1982-03-03
NL7809866A (nl) 1979-04-02
GB2007937A (en) 1979-05-23
JPS5451318A (en) 1979-04-23
FR2409646A1 (fr) 1979-06-15
DE2842346C2 (de) 1987-05-14
FR2409646B1 (fr) 1983-11-18

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Legal Events

Date Code Title Description
MKEX Expiry
MKEX Expiry

Effective date: 19990608