CA1125897A - Laser a heterostructure en microlignes plates enfouies - Google Patents
Laser a heterostructure en microlignes plates enfouiesInfo
- Publication number
- CA1125897A CA1125897A CA384,604A CA384604A CA1125897A CA 1125897 A CA1125897 A CA 1125897A CA 384604 A CA384604 A CA 384604A CA 1125897 A CA1125897 A CA 1125897A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- active
- active layer
- laser
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000005253 cladding Methods 0.000 abstract description 18
- 238000005086 pumping Methods 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 158
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 238000004943 liquid phase epitaxy Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 238000002048 anodisation reaction Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA384,604A CA1125897A (fr) | 1977-12-28 | 1981-08-25 | Laser a heterostructure en microlignes plates enfouies |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/865,237 US4190813A (en) | 1977-12-28 | 1977-12-28 | Strip buried heterostructure laser |
| US865,237 | 1977-12-28 | ||
| CA000315705A CA1134485A (fr) | 1977-12-28 | 1978-10-31 | Laser a heterostructure enterree en bande |
| CA384,604A CA1125897A (fr) | 1977-12-28 | 1981-08-25 | Laser a heterostructure en microlignes plates enfouies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1125897A true CA1125897A (fr) | 1982-06-15 |
Family
ID=27165962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA384,604A Expired CA1125897A (fr) | 1977-12-28 | 1981-08-25 | Laser a heterostructure en microlignes plates enfouies |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1125897A (fr) |
-
1981
- 1981-08-25 CA CA384,604A patent/CA1125897A/fr not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |