CA1153825A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA1153825A CA1153825A CA000367341A CA367341A CA1153825A CA 1153825 A CA1153825 A CA 1153825A CA 000367341 A CA000367341 A CA 000367341A CA 367341 A CA367341 A CA 367341A CA 1153825 A CA1153825 A CA 1153825A
- Authority
- CA
- Canada
- Prior art keywords
- emitter
- base
- region
- section
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 239000000969 carrier Substances 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 239000002784 hot electron Substances 0.000 abstract description 2
- 230000027756 respiratory electron transport chain Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11817180A | 1980-02-04 | 1980-02-04 | |
| US118,171 | 1980-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1153825A true CA1153825A (en) | 1983-09-13 |
Family
ID=22376919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000367341A Expired CA1153825A (en) | 1980-02-04 | 1980-12-22 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0033496B1 (2) |
| JP (1) | JPS56116672A (2) |
| CA (1) | CA1153825A (2) |
| DE (1) | DE3171163D1 (2) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR200450320Y1 (ko) | 2008-05-19 | 2010-09-20 | 김진중 | 계측장비용 리드본체의 리드케이블 연결구조 |
| JP5329315B2 (ja) * | 2009-06-22 | 2013-10-30 | 日本電信電話株式会社 | ヘテロ接合バイポーラトランジスタ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1257977B (de) * | 1965-04-17 | 1968-01-04 | Telefunken Patent | Verfahren zur Herstellung eines Metallbasistransistors |
| US4173763A (en) * | 1977-06-09 | 1979-11-06 | International Business Machines Corporation | Heterojunction tunneling base transistor |
| US4127861A (en) * | 1977-09-26 | 1978-11-28 | International Business Machines Corporation | Metal base transistor with thin film amorphous semiconductors |
-
1980
- 1980-12-22 CA CA000367341A patent/CA1153825A/en not_active Expired
-
1981
- 1981-01-09 JP JP130681A patent/JPS56116672A/ja active Granted
- 1981-01-23 DE DE8181100497T patent/DE3171163D1/de not_active Expired
- 1981-01-23 EP EP81100497A patent/EP0033496B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0033496A2 (en) | 1981-08-12 |
| EP0033496B1 (en) | 1985-07-03 |
| EP0033496A3 (en) | 1982-04-14 |
| JPH0132663B2 (2) | 1989-07-10 |
| JPS56116672A (en) | 1981-09-12 |
| DE3171163D1 (en) | 1985-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |