CA1157576A - Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque - Google Patents

Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque

Info

Publication number: CA1157576A
Authority: CA; Canada
Prior art keywords: diffusion; wafers; flow; source; tube
Prior art date: 1980-11-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000364795A

Other languages

English (en)

Inventor

Henri B. Assalit

Mike F. Chang

David K. Hartman

Richard W. Kennedy

Alfred Roesch

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

General Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-11-17

Filing date

1980-11-17

Publication date

1983-11-22

1980-11-17 Application filed by General Electric Co filed Critical General Electric Co

1980-11-17 Priority to CA000364795A priority Critical patent/CA1157576A/fr

1983-11-22 Application granted granted Critical

1983-11-22 Publication of CA1157576A publication Critical patent/CA1157576A/fr

Status Expired legal-status Critical Current

Links

238000009792 diffusion process Methods 0.000 title claims abstract description 112
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 39
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 43
229910052782 aluminium Inorganic materials 0.000 claims abstract description 42
238000000034 method Methods 0.000 claims abstract description 32
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 28
239000010980 sapphire Substances 0.000 claims abstract description 17
229910052594 sapphire Inorganic materials 0.000 claims abstract description 17
239000004065 semiconductor Substances 0.000 claims abstract description 15
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 14
229910052786 argon Inorganic materials 0.000 claims abstract description 14
239000001257 hydrogen Substances 0.000 claims abstract description 13
229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052796 boron Inorganic materials 0.000 claims abstract description 10
229910052582 BN Inorganic materials 0.000 claims abstract description 4
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 4
235000012431 wafers Nutrition 0.000 claims description 90
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
229910052710 silicon Inorganic materials 0.000 claims description 19
239000010703 silicon Substances 0.000 claims description 19
239000007789 gas Substances 0.000 claims description 16
238000010438 heat treatment Methods 0.000 claims description 8
239000013078 crystal Substances 0.000 claims description 3
239000011261 inert gas Substances 0.000 claims description 3
AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 1
239000000919 ceramic Substances 0.000 abstract description 8
239000012535 impurity Substances 0.000 description 21
239000011224 oxide ceramic Substances 0.000 description 8
229910052574 oxide ceramic Inorganic materials 0.000 description 8
125000004429 atom Chemical group 0.000 description 7
239000010453 quartz Substances 0.000 description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
239000000463 material Substances 0.000 description 5
239000001301 oxygen Substances 0.000 description 5
229910052760 oxygen Inorganic materials 0.000 description 5
PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
238000009835 boiling Methods 0.000 description 4
230000004927 fusion Effects 0.000 description 4
238000002347 injection Methods 0.000 description 4
239000007924 injection Substances 0.000 description 4
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
239000000908 ammonium hydroxide Substances 0.000 description 3
QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 3
238000004140 cleaning Methods 0.000 description 3
239000002019 doping agent Substances 0.000 description 3
238000002955 isolation Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
239000000969 carrier Substances 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
230000008030 elimination Effects 0.000 description 2
238000003379 elimination reaction Methods 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
239000007787 solid Substances 0.000 description 2
238000012935 Averaging Methods 0.000 description 1
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
241000406668 Loxodonta cyclotis Species 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
230000032683 aging Effects 0.000 description 1
230000009286 beneficial effect Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000011109 contamination Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
229910052593 corundum Inorganic materials 0.000 description 1
230000001351 cycling effect Effects 0.000 description 1
238000005238 degreasing Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
238000005247 gettering Methods 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
230000002045 lasting effect Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000008520 organization Effects 0.000 description 1
239000003973 paint Substances 0.000 description 1
238000005498 polishing Methods 0.000 description 1
229910052573 porcelain Inorganic materials 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000003870 refractory metal Substances 0.000 description 1
229920006395 saturated elastomer Polymers 0.000 description 1
238000000926 separation method Methods 0.000 description 1
230000035939 shock Effects 0.000 description 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
229910010271 silicon carbide Inorganic materials 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
230000035882 stress Effects 0.000 description 1
235000011149 sulphuric acid Nutrition 0.000 description 1

Landscapes

Crystals, And After-Treatments Of Crystals (AREA)

CA000364795A 1980-11-17 1980-11-17 Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque Expired CA1157576A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000364795A CA1157576A (fr)	1980-11-17	1980-11-17	Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA000364795A CA1157576A (fr)	1980-11-17	1980-11-17	Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque

Publications (1)

Publication Number	Publication Date
CA1157576A true CA1157576A (fr)	1983-11-22

Family

ID=4118460

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000364795A Expired CA1157576A (fr)	1980-11-17	1980-11-17	Diffusion en tube ouvert d'oxyde d'aluminium sur pieces en forme de disque

Country Status (1)

Country	Link
CA (1)	CA1157576A (fr)

1980
- 1980-11-17 CA CA000364795A patent/CA1157576A/fr not_active Expired

Legal Events

Date	Code	Title	Description
2000-11-22	MKEX	Expiry

Publication	Publication Date	Title
CA1039629A (fr)	1978-10-03	Mode d'extraction des contaminants dans un silicium monocristallin
US3914138A (en)	1975-10-21	Method of making semiconductor devices by single step diffusion
EP0519854A2 (fr)	1992-12-23	Procédé pour contrôler l'oxyde d'interface à l'interface silicium monocristallin/polycristallin et dispositif obtenu
US6294444B1 (en)	2001-09-25	Method for manufacturing silicon carbide semiconductor device
US4290830A (en)	1981-09-22	Method of selectively diffusing aluminium into a silicon semiconductor substrate
US3165811A (en)	1965-01-19	Process of epitaxial vapor deposition with subsequent diffusion into the epitaxial layer
EP0308695B1 (fr)	1993-01-27	Composant pour produire des dispositifs semi-conducteurs et procédé de production de celui-ci
US4587928A (en)	1986-05-13	Apparatus for producing a semiconductor device
CN1034893C (zh)	1997-05-14	去除硅中的杂质及提高其少数载流子寿命的方法
US3488235A (en)	1970-01-06	Triple-epitaxial layer high power,high speed transistor
US4235650A (en)	1980-11-25	Open tube aluminum diffusion
US4239560A (en)	1980-12-16	Open tube aluminum oxide disc diffusion
JPH10106955A (ja)	1998-04-24	半導体基板の製造方法及びその製造装置
Waki et al.	2001	Low-temperature activation of Mg-doped GaN using Ni films
US3345222A (en)	1967-10-03	Method of forming a semiconductor device by etching and epitaxial deposition
EP0190934B1 (fr)	1992-01-15	Procédé pour fabriquer un thyristor
US4032955A (en)	1977-06-28	Deep diode transistor
US3512056A (en)	1970-05-12	Double epitaxial layer high power,high speed transistor
US4266990A (en)	1981-05-12	Process for diffusion of aluminum into a semiconductor
JP2005223292A (ja)	2005-08-18	半導体熱処理用治具の高純度化方法
US3323957A (en)	1967-06-06	Production of semiconductor devices
US3537889A (en)	1970-11-03	Low temperature formation of oxide layers on silicon elements of semiconductor devices
JPS59191327A (ja)	1984-10-30	熱処理用治具
US3988769A (en)	1976-10-26	High voltage diodes
US3771028A (en)	1973-11-06	High gain, low saturation transistor