CA1165212A - Crucible assembly - Google Patents

Crucible assembly

Info

Publication number
CA1165212A
CA1165212A CA000354711A CA354711A CA1165212A CA 1165212 A CA1165212 A CA 1165212A CA 000354711 A CA000354711 A CA 000354711A CA 354711 A CA354711 A CA 354711A CA 1165212 A CA1165212 A CA 1165212A
Authority
CA
Canada
Prior art keywords
cover
crucible
die
melt
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000354711A
Other languages
English (en)
French (fr)
Inventor
Aaron S. Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott Solar CSP Inc
Original Assignee
Mobil Tyco Solar Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mobil Tyco Solar Energy Corp filed Critical Mobil Tyco Solar Energy Corp
Application granted granted Critical
Publication of CA1165212A publication Critical patent/CA1165212A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000354711A 1979-08-10 1980-06-25 Crucible assembly Expired CA1165212A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6550679A 1979-08-10 1979-08-10
US065,506 1979-08-10

Publications (1)

Publication Number Publication Date
CA1165212A true CA1165212A (en) 1984-04-10

Family

ID=22063201

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000354711A Expired CA1165212A (en) 1979-08-10 1980-06-25 Crucible assembly

Country Status (9)

Country Link
JP (1) JPS5632395A (2)
AU (1) AU536526B2 (2)
CA (1) CA1165212A (2)
DE (1) DE3030169A1 (2)
FR (1) FR2463203A1 (2)
GB (1) GB2055614B (2)
IL (1) IL60434A (2)
IN (1) IN154236B (2)
NL (1) NL8004108A (2)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402786A (en) * 1981-09-01 1983-09-06 Mobil Solar Energy Corporation Adjustable heat shield assembly
US5037622A (en) * 1990-07-13 1991-08-06 Mobil Solar Energy Corporation Wet-tip die for EFG crystal growth apparatus
FR2769639B1 (fr) * 1997-10-10 1999-11-12 Commissariat Energie Atomique Filiere pour le tirage de cristaux a partir d'un bain fondu
JP7667803B2 (ja) * 2020-06-04 2025-04-23 アプライド マテリアルズ インコーポレイテッド 気相堆積装置及び真空チャンバ内で基板をコーティングするための方法

Also Published As

Publication number Publication date
NL8004108A (nl) 1981-02-12
GB2055614B (en) 1984-04-18
FR2463203A1 (fr) 1981-02-20
GB2055614A (en) 1981-03-11
AU6008080A (en) 1981-02-12
JPS5632395A (en) 1981-04-01
IL60434A (en) 1983-12-30
DE3030169A1 (de) 1981-02-26
IN154236B (2) 1984-10-06
AU536526B2 (en) 1984-05-10

Similar Documents

Publication Publication Date Title
CA1052667A (en) Apparatus for growing crystalline bodies from the melt
DE102010029756B4 (de) Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung
US4230674A (en) Crucible-die assemblies for growing crystalline bodies of selected shapes
US3687633A (en) Apparatus for growing crystalline bodies from the melt
US3870477A (en) Optical control of crystal growth
EP1099014B1 (de) VORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG MINDESTENS EINES SiC-EINKRISTALLS
CA1165212A (en) Crucible assembly
DE112008000893T5 (de) Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot
US3961905A (en) Crucible and heater assembly for crystal growth from a melt
DE69716385T2 (de) Verfahren und Vorrichtung zur kontinuierlichen Herstellung von Feststoffen
US5279798A (en) Silicon single crystal manufacturing apparatus
CA1183761A (en) Crystal growth apparatus
US4751059A (en) Apparatus for growing dendritic web crystals of constant width
EP0438390B1 (de) Verfahren und vorrichtung zur züchtung von kristallen nach der czochralski-methode
US4032390A (en) Plural crystal pulling from a melt in an annular crucible heated on both inner and outer walls
DE19931332C2 (de) Vorrichtung zur Herstellung eines SiC-Einkristalls mit einem doppelwandigen Tiegel
Borodin et al. Variable shaping growth of refractory oxide shaped crystals
Perner et al. Liquid/solid interface profile of melt grown oxide crystals I. Czochralski growth
CA1201645A (en) Capillary die assembly
US5033849A (en) Atomizing device of high-melting metal
US20040200408A1 (en) Shallow melt apparatus for semicontinuous czochralski crystal growth
EP0135676A2 (en) Apparatus for growing Czochralski crystals and growth method using such apparatus
CN217077844U (zh) 一种金属晶体制备装置
CA1116985A (en) Capillary die
DE69801224T2 (de) Vorrichtung zur erstarrung und zur kontinuierlichen überwachung der kristallzüchtung

Legal Events

Date Code Title Description
MKEX Expiry