CA1167963A - Circuit senseur pour cellule de memoire morte multi-bit - Google Patents

Circuit senseur pour cellule de memoire morte multi-bit

Info

Publication number: CA1167963A
Authority: CA; Canada
Prior art keywords: transistor means; memory; voltage; storage; output
Prior art date: 1980-12-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000393116A

Other languages

English (en)

Inventor

Ching-Lin Jiang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CTU of Delaware Inc

Original Assignee

Mostek Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-12-24

Filing date

1981-12-23

Publication date

1984-05-22

1981-12-23 Application filed by Mostek Corp filed Critical Mostek Corp

1984-05-22 Application granted granted Critical

1984-05-22 Publication of CA1167963A publication Critical patent/CA1167963A/fr

Status Expired legal-status Critical Current

Links

230000015654 memory Effects 0.000 title claims abstract description 60
238000003860 storage Methods 0.000 claims abstract description 85
238000000034 method Methods 0.000 claims description 4
210000004027 cell Anatomy 0.000 description 35
239000004065 semiconductor Substances 0.000 description 8
210000000352 storage cell Anatomy 0.000 description 5
239000003990 capacitor Substances 0.000 description 4
230000005669 field effect Effects 0.000 description 4
230000008859 change Effects 0.000 description 3
238000005468 ion implantation Methods 0.000 description 3
230000005055 memory storage Effects 0.000 description 3
238000010276 construction Methods 0.000 description 2
230000007423 decrease Effects 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
230000006870 function Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
101001052394 Homo sapiens [F-actin]-monooxygenase MICAL1 Proteins 0.000 description 1
AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 description 1
102100024306 [F-actin]-monooxygenase MICAL1 Human genes 0.000 description 1
238000003491 array Methods 0.000 description 1
230000000295 complement effect Effects 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000011982 device technology Methods 0.000 description 1
238000002513 implantation Methods 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000012856 packing Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Read Only Memory (AREA)

CA000393116A 1980-12-24 1981-12-23 Circuit senseur pour cellule de memoire morte multi-bit Expired CA1167963A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US26599380A	1980-12-24	1980-12-24
US265,993		1980-12-24

Publications (1)

Publication Number	Publication Date
CA1167963A true CA1167963A (fr)	1984-05-22

Family

ID=23012721

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000393116A Expired CA1167963A (fr)	1980-12-24	1981-12-23	Circuit senseur pour cellule de memoire morte multi-bit

Country Status (2)

Country	Link
CA (1)	CA1167963A (fr)
FR (1)	FR2496956A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3179943B2 (ja) *	1993-07-12	2001-06-25	株式会社東芝	半導体記憶装置
US5546068A (en) *	1994-12-22	1996-08-13	At&T Corp.	Sense amplifier

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS53144232A (en) *	1977-04-28	1978-12-15	Toshiba Corp	Sensor circuit for multi-value signal charge transfer device
US4202044A (en) *	1978-06-13	1980-05-06	International Business Machines Corporation	Quaternary FET read only memory
US4192014A (en) *	1978-11-20	1980-03-04	Ncr Corporation	ROM memory cell with 2n FET channel widths

1981
- 1981-12-23 CA CA000393116A patent/CA1167963A/fr not_active Expired
- 1981-12-24 FR FR8124238A patent/FR2496956A1/fr active Pending

Also Published As

Publication number	Publication date
FR2496956A1 (fr)	1982-06-25

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Legal Events

Date	Code	Title	Description
2001-05-22	MKEX	Expiry